Changes in surface characteristics of silicon nitride prepared for extrusion

1996 ◽  
Vol 16 (10) ◽  
pp. 1127-1132 ◽  
Author(s):  
R.M.Torres Sanchez ◽  
A.B. Garcia ◽  
A.M. Cesio
Keyword(s):  
Silicon Nitride ◽  
Surface Characteristics

Surface Characteristics and Aqueous Dispersibility of Commercial Silicon Nitride Powders: Comparison of As-Received Powders

2008 ◽  
Vol 368-372 ◽  
pp. 855-857
Author(s):  
Jian Qing Dai ◽  
Yong Huang ◽  
Jing Tao Ma ◽  
Zhi Peng Xie
Keyword(s):  
Silicon Nitride ◽  
Surface Characteristics ◽  
Water Soluble ◽  
Surface Groups ◽  
Production Methods ◽  
Soluble Ions ◽  
Water Soluble Ions ◽  
Powder Properties ◽  
Aqueous Dispersibility

Particular attention is paid in this paper to understanding the surface characteristics and aqueous dispersibility of as-received commercial powders. The different production methods and specific pulverization processes used for the four powders studied (FD1, FD2, M11, UBE) result in obvious differences in such powder properties as surface groups, aqueous dispersibility, and water-soluble ions.

Characterisation of 4H-SiC MOS Capacitor with a Protective Coating for Harsh Environments Applications

2017 ◽  
Vol 897 ◽  
pp. 327-330
Author(s):  
Sandip Kumar Roy ◽  
Jesus Urresti Ibanez ◽  
Anthony G. O’Neill ◽  
Nick G. Wright ◽  
Alton B. Horsfall
Keyword(s):  
Silicon Nitride ◽  
High Performance ◽  
Ohmic Contacts ◽  
Surface Characteristics ◽  
Harsh Environments ◽  
Mos Capacitors ◽  
Mos Capacitor ◽  
Mos Devices ◽  
High K ◽  
Mos Structures

Oxygen free Ohmic contacts are essential for the realisation of high performance devices. Ohmic contacts in SiC often require annealing under vacuum at over 1000 °C, whilst high-κ dielectrics are usually annealed in O2 rich ambient at temperatures of 800 °C or less, affecting the electrical and surface characteristics. Therefore, protection of the Ohmic contacts during the annealing of a high-κ dielectric layer is a key enabling step in the realisation of high performance MOS structures. In order to prevent damage during the high-k formation the use of silicon nitride as a passivation layer, capable of protecting the contacts during annealing, has been investigated. In this work we have investigated and compared silicon nitride protected high-κ dielectric SiC based MOS capacitors with the unprotected SiC MOS devices in terms of electrical and optical characteristics.

Lattice Imaging of Grain Boundaries in Ceramics

1977 ◽  
Vol 35 ◽  
pp. 114-115
Author(s):  
D. R. Clarke ◽  
G. Thomas
Keyword(s):  
Mechanical Properties ◽  
High Temperature ◽  
Silicon Nitride ◽  
Grain Boundaries ◽  
High Temperature Strength ◽  
Current Interest ◽  
Lattice Imaging ◽  
Special Significance ◽  
Structural Applications ◽  
Refractory Ceramics

Grain boundaries have long held a special significance to ceramicists. In part, this has been because it has been impossible until now to actually observe the boundaries themselves. Just as important, however, is the fact that the grain boundaries and their environs have a determing influence on both the mechanisms by which powder compaction occurs during fabrication, and on the overall mechanical properties of the material. One area where the grain boundary plays a particularly important role is in the high temperature strength of hot-pressed ceramics. This is a subject of current interest as extensive efforts are being made to develop ceramics, such as silicon nitride alloys, for high temperature structural applications. In this presentation we describe how the techniques of lattice fringe imaging have made it possible to study the grain boundaries in a number of refractory ceramics, and illustrate some of the findings.

Sign in / Sign up

Export Citation Format

Share Document