SiC Crystal Growth by Sublimation Method with Modification of Crucible and Insulation Felt Design

We report on polytype destabilization during bulk crystal growth of Silicon Carbide by seeded sublimation method. Polytype transitions are experimentally obtained and a thermodynamic analysis using classical 2D nucleation theory is used towards the understanding of the experimental results. Whether it is a thin lamella or an inclusion, it is found that the polytype transitions systematically occur on the (0001) facet. This suggests that the polytype switch takes place through classical 2D nucleation at the facet. We will show that two criteria must be fulfilled for the occurrence of a foreign polytype: i) minimization of nucleation energy and ii) presence of a facet. This is directly depending on the crystal shape (convex or concave) and its evolution with growth time.

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In situ x-ray topography of silicon carbide during crystal growth by sublimation method

Review of Scientific Instruments ◽

10.1063/1.1150698 ◽

2000 ◽

Vol 71 (7) ◽

pp. 2829-2832 ◽

Cited By ~ 7

Author(s):

H. Yamaguchi ◽

S. Nishizawa ◽

T. Kato ◽

N. Oyanagi ◽

W. Bahng ◽

...

Keyword(s):

Silicon Carbide ◽

Crystal Growth ◽

X Ray ◽

Sublimation Method

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Industrial challenges for numerical simulation of crystal growth

Open Physics ◽

10.2478/bf02476280 ◽

2004 ◽

Vol 2 (1) ◽

Cited By ~ 3

Author(s):

M. Bogdanov ◽

D. Ofengeim ◽

A. Zhmakin

Keyword(s):

Numerical Simulation ◽

Crystal Growth ◽

Complex Geometry ◽

Academic Research ◽

Real Life ◽

Industrial Applications ◽

Graphic User Interface ◽

Bulk Crystals ◽

Sublimation Method ◽

Physical Phenomena

AbstractNumerical simulation of industrial crystal growth is difficult due to its multidisciplinary nature and the complex geometry of the real-life growth equipment. An attempt is made to itemize physical phenomena dominant in the different methods for growth of bulk crystals from the melt and the vapor phase as well as to review corresponding numerical approaches. Academic research and industrial applications are compared. Development of a computational engine and a graphic user interface of the industry-oriented codes is discussed. A simulator for the entire growth process of bulk crystals by sublimation method is described.

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Evolution Roots of Growth-Induced Polytype Domains in 6H-SiC Single Crystals

Materials Science Forum ◽

10.4028/www.scientific.net/msf.483-485.43 ◽

2005 ◽

Vol 483-485 ◽

pp. 43-46 ◽

Cited By ~ 3

Author(s):

Soo Hyung Seo ◽

Joon Suk Song ◽

Myung Hwan Oh ◽

Yen Zen Wang

Keyword(s):

Raman Spectroscopy ◽

Crystal Growth ◽

Optical Microscopy ◽

Single Crystals ◽

Local Variation ◽

Experimental Results ◽

Central Position ◽

Polarized Optical Microscopy ◽

Micro Raman Spectroscopy ◽

Sublimation Method

We present experimental results with regard to the evaluation of growth-induced polytype domains in 6H-SiC crystals grown by sublimation method and these domains are characterized by using the polarized optical microscopy and micro-Raman spectroscopy. The polytype domains of reverse triangular are generated by local variation of temperature along cdirection and spread-wing shapes normally occurred forming micropipes in many cases. These polytype domains may be generated due to the local variation of supersaturation and/or temperature at central position during crystal growth. In this work, we try to elucidate the origin and mechanism responsible for growth-induced polytype domains.

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