Rare Earth Ion Implantation for Silicon Based Light Emission

2005 ◽  
pp. 755-760
Author(s):  
Wolfgang Skorupa ◽  
J.M. Sun ◽  
S. Prucnal ◽  
L. Rebohle ◽  
T. Gebel ◽  
...  
Keyword(s):  
Rare Earth ◽  
Ion Implantation ◽  
Light Emission ◽  
Rare Earth Ion ◽  
Silicon Based

Rare Earth Ion Implantation for Silicon Based Light Emission

2005 ◽  
Vol 108-109 ◽  
pp. 755-760 ◽  
Author(s):  
Wolfgang Skorupa ◽  
J.M. Sun ◽  
S. Prucnal ◽  
L. Rebohle ◽  
T. Gebel ◽  
...  
Keyword(s):  
Rare Earth ◽  
Ion Implantation ◽  
Indium Tin Oxide ◽  
Light Emission ◽  
Charge Trapping ◽  
Electrical Performance ◽  
Rare Earth Ion ◽  
Light Emitting ◽  
Silicon Based ◽  
Luminescent Centers

Using ion implantation different rare earth luminescent centers (Gd3+, Tb3+, Eu3+, Ce3+, Tm3+, Er3+) were formed in the silicon dioxide layer of a purpose-designed Metal Oxide Silicon (MOS) capacitor with advanced electrical performance, further called a MOS-light emitting device (MOSLED). Efficient electroluminescence was obtained for the wavelength range from UV to infrared with a transparent top electrode made of indium-tin oxide. Top values of the efficiency of 0.3 % corresponding to external quantum efficiencies distinctly above the percent range were reached. The electrical properties of these devices such as current-voltage and charge trapping characteristics, were also evaluated. Finally, application aspects to the field of biosensing will be shown.

MOS Light Emitting Devices Based on Rare-Earth Ion Implantation

2008 ◽  
Vol 590 ◽  
pp. 117-138 ◽  
Author(s):  
L. Rebohle ◽  
Wolfgang Skorupa
Keyword(s):  
Rare Earth ◽  
Ion Implantation ◽  
Indium Tin Oxide ◽  
Power Efficiency ◽  
Light Emission ◽  
Rare Earth Ions ◽  
Impact Excitation ◽  
Electron Impact Excitation ◽  
Hot Electron ◽  
Rare Earth Ion

In this article we will give an overview of our work devoted to Si-based light emission which was done in the last years. Si-based light emitters were fabricated by ion implantation of rare earth elements into the oxide layer of a conventional MOS structure. Efficient electroluminescence was obtained for the wavelength range from UV to the visible by using a transparent top electrode made of indium-tin oxide. In the case of Tb-implantation the best devices reach an external quantum efficiency of 16 % which corresponds to a power efficiency in the order of 0.3 %. The properties of the microstructure, the IV characteristics and the electroluminescence spectra were evaluated. The electroluminescence was found to be caused by hot electron impact excitation of rare earth ions, and the electric phenomena of charge transport, luminescence centre excitation, quenching and degradation are explained in detail.

A comparative investigation of the damage build-up in GaN and Si during rare earth ion implantation

2008 ◽  
Vol 205 (1) ◽  
pp. 68-70 ◽  
Author(s):  
Florence Gloux ◽  
Pierre Ruterana ◽  
K. Lorenz ◽  
E. Alves
Keyword(s):  
Rare Earth ◽  
Ion Implantation ◽  
Comparative Investigation ◽  
Rare Earth Ion

Chapter 9 Light Emission from Silicon-Based Materials: From Silicon Nanostructures to Rare Earth Ions

2016 ◽  
pp. 241-280
Author(s):  
Fabio Iaconaa ◽  
Maria Miritelloa ◽  
Simona Boninellib ◽  
Gabriele Bellocchia, b ◽  
Alessia Irrerac ◽  
...  
Keyword(s):  
Rare Earth ◽  
Light Emission ◽  
Rare Earth Ions ◽  
Silicon Nanostructures ◽  
Silicon Based

scholarly journals Surface modification of W9Cr4V2Mo high-temperature bearing steel by rare earth ion implantation

2006 ◽  
Vol 201 (7) ◽  
pp. 4357-4360 ◽  
Author(s):  
Fanya Jin ◽  
Paul K. Chu ◽  
Zejin Xu ◽  
Jiaxue Zhao ◽  
Ming Zhu ◽  
...  
Keyword(s):  
Surface Modification ◽  
Rare Earth ◽  
High Temperature ◽  
Ion Implantation ◽  
Bearing Steel ◽  
Rare Earth Ion

scholarly journals The high sensitivity of InN under rare earth ion implantation at medium range energy

2011 ◽  
Vol 44 (29) ◽  
pp. 295402 ◽  
Author(s):  
B Lacroix ◽  
M P Chauvat ◽  
P Ruterana ◽  
K Lorenz ◽  
E Alves ◽  
...  
Keyword(s):  
Rare Earth ◽  
Ion Implantation ◽  
High Sensitivity ◽  
Rare Earth Ion ◽  
Medium Range
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