MOS Light Emitting Devices Based on Rare-Earth Ion Implantation

2008 ◽  
Vol 590 ◽  
pp. 117-138 ◽  
Author(s):  
L. Rebohle ◽  
Wolfgang Skorupa
Keyword(s):  
Rare Earth ◽  
Ion Implantation ◽  
Indium Tin Oxide ◽  
Power Efficiency ◽  
Light Emission ◽  
Rare Earth Ions ◽  
Impact Excitation ◽  
Electron Impact Excitation ◽  
Hot Electron ◽  
Rare Earth Ion

In this article we will give an overview of our work devoted to Si-based light emission which was done in the last years. Si-based light emitters were fabricated by ion implantation of rare earth elements into the oxide layer of a conventional MOS structure. Efficient electroluminescence was obtained for the wavelength range from UV to the visible by using a transparent top electrode made of indium-tin oxide. In the case of Tb-implantation the best devices reach an external quantum efficiency of 16 % which corresponds to a power efficiency in the order of 0.3 %. The properties of the microstructure, the IV characteristics and the electroluminescence spectra were evaluated. The electroluminescence was found to be caused by hot electron impact excitation of rare earth ions, and the electric phenomena of charge transport, luminescence centre excitation, quenching and degradation are explained in detail.

Rare Earth Ion Implantation for Silicon Based Light Emission

2005 ◽  
Vol 108-109 ◽  
pp. 755-760 ◽  
Author(s):  
Wolfgang Skorupa ◽  
J.M. Sun ◽  
S. Prucnal ◽  
L. Rebohle ◽  
T. Gebel ◽  
...  
Keyword(s):  
Rare Earth ◽  
Ion Implantation ◽  
Indium Tin Oxide ◽  
Light Emission ◽  
Charge Trapping ◽  
Electrical Performance ◽  
Rare Earth Ion ◽  
Light Emitting ◽  
Silicon Based ◽  
Luminescent Centers

Using ion implantation different rare earth luminescent centers (Gd3+, Tb3+, Eu3+, Ce3+, Tm3+, Er3+) were formed in the silicon dioxide layer of a purpose-designed Metal Oxide Silicon (MOS) capacitor with advanced electrical performance, further called a MOS-light emitting device (MOSLED). Efficient electroluminescence was obtained for the wavelength range from UV to infrared with a transparent top electrode made of indium-tin oxide. Top values of the efficiency of 0.3 % corresponding to external quantum efficiencies distinctly above the percent range were reached. The electrical properties of these devices such as current-voltage and charge trapping characteristics, were also evaluated. Finally, application aspects to the field of biosensing will be shown.

Investigation of the Temperature Degradation and Re-Activation of the Luminescent Centres in Rare Earth Implanted SiO2 Layers

2007 ◽  
Vol 131-133 ◽  
pp. 595-600
Author(s):  
S. Prucnal ◽  
L. Rebohle ◽  
Wolfgang Skorupa
Keyword(s):  
Rare Earth ◽  
Light Emitting Diode ◽  
Operating Time ◽  
Impact Excitation ◽  
Electron Impact Excitation ◽  
Hot Electron ◽  
Light Emitting ◽  
Hot Electron Injection ◽  
Quenching Process ◽  
Quenching Mechanisms

The temperature quenching mechanisms of the electroluminescence (EL) and the reactivation of the rare earth luminescent centres by the flash lamp annealing (FLA) made after hot electron injection into the SiO2 layer implanted by Tb and Gd was investigated. An increase of the temperature from room temperature up to 150oC reduces the gate voltage of about 3 V and increases the rate of the EL quenching process and the degradation of the Metal-Oxide-Silicon Light Emitting Diode (MOSLED) structure by a of factor of three. On the other hand, the post-injection FLA reactivates the RE centres switched off by electrons trapped around them during hot electron impact excitation, increasing the operating time of the MOSLEDs devices.

scholarly journals Visible and Infrared Rare-Earth Activated Electroluminescence from Erbium Doped GaN

1999 ◽  
Vol 4 (S1) ◽  
pp. 940-945 ◽  
Author(s):  
M. Garter ◽  
R. Birkhahn ◽  
A. J. Steckl ◽  
J. Scofield
Keyword(s):  
Indium Tin Oxide ◽  
Ground State ◽  
Reverse Bias ◽  
Light Emission ◽  
Forward Bias ◽  
Bias Current ◽  
Emission Lines ◽  
Impact Excitation ◽  
Electron Impact Excitation ◽  
Ir Light

Room temperature visible and IR light electroluminescence (EL) has been obtained from Er-doped GaN Schottky barrier diodes. The GaN was grown by molecular beam epitaxy on Si substrates using solid sources (for Ga and Er) and a plasma source for N2. Transparent contacts utilizing indium tin oxide were employed. Strong green light emission was observed under reverse bias due to electron impact excitation of the Er atoms. Weaker emission was present under forward bias. The emission spectrum consists of two narrow green lines at 537 and 558 nm and minor peaks at 413, 461, 665, and 706 nm. There is also emission at 1000 nm and 1540 nm in the IR. The green emission lines have been identified as Er transitions from the 2H11/2 and 4S3/2 levels to the 4I15/2 ground state. The IR emission lines have been identified as transitions from the 4I11/2 and 4I13/2 levels to the 4I15/2 ground state. EL intensity for visible and IR light has a sub-unity power law dependence on bias current. An external quantum efficiency of 0.1% has also been demonstrated under a reverse bias current of 3.85 mA.

scholarly journals Rare Earth Ion Implantation for Silicon Based Light Emission: From Infrared to Ultraviolet

2005 ◽  
Vol 866 ◽  
Author(s):  
W. Skorupa ◽  
J. M. Sun ◽  
S. Prucnal ◽  
L. Rebohle ◽  
T. Gebel ◽  
...  
Keyword(s):  
Rare Earth ◽  
Ion Implantation ◽  
Silicon Dioxide ◽  
Indium Tin Oxide ◽  
Power Efficiency ◽  
Charge Trapping ◽  
Electrical Performance ◽  
Luminescence Spectra ◽  
Silicon Cluster ◽  
Silicon Dioxide Layer

AbstractUsing ion implantation different rare earth luminescent centers (Gd3+, Tb3+, Eu3+, Ce3+, Tm3+, Er3+) were incorporated into the silicon dioxide layer of a purpose-designed Metal Oxide Silicon (MOS) capacitor with advanced electrical performance, further called a MOS-light emitting device (MOSLED). The silicon dioxide layer did not contain silicon nanoclusters. Efficient electroluminescence was obtained from UV to infrared with a transparent top electrode made of indium-tin oxide. The electroluminescence properties were studied with respect to the luminescence spectra, decay time, impact excitation, cross relaxation (Tb3+), and power efficiency. Top values of the efficiency of 0.3 % corresponding to external quantum efficiencies well above the percent range were reached. The electrical properties of these devices such as current-voltage and charge trapping characteristics, were also evaluated. Moreover, we demonstrate photo- and electroluminescence in correlation to charge trapping characteristics for Er-rich MOSLEDs with a varying silicon cluster content. Finally, application aspects to the field of biosensing will be discussed.

Rare Earth Ion Implantation for Silicon Based Light Emission

2005 ◽  
pp. 755-760
Author(s):  
Wolfgang Skorupa ◽  
J.M. Sun ◽  
S. Prucnal ◽  
L. Rebohle ◽  
T. Gebel ◽  
...  
Keyword(s):  
Rare Earth ◽  
Ion Implantation ◽  
Light Emission ◽  
Rare Earth Ion ◽  
Silicon Based

Visible and Infrared Rare-Earth Activated Electroluminescence From Erbium Doped GaN

1998 ◽  
Vol 537 ◽  
Author(s):  
M. Garter ◽  
R. Birkhahn ◽  
A. J. Steckl ◽  
J. Scofield
Keyword(s):  
Indium Tin Oxide ◽  
Ground State ◽  
Reverse Bias ◽  
Light Emission ◽  
Forward Bias ◽  
Bias Current ◽  
Emission Lines ◽  
Impact Excitation ◽  
Electron Impact Excitation ◽  
Ir Light

AbstractRoom temperature visible and IR light electroluminescence (EL) has been obtained from Er-doped GaN Schottky barrier diodes. The GaN was grown by molecular beam epitaxy on Si substrates using solid sources (for Ga and Er) and a plasma source for N2. Transparent contacts utilizing indium tin oxide were employed. Strong green light emission was observed under reverse bias due to electron impact excitation of the Er atoms. Weaker emission was present under forward bias. The emission spectrum consists of two narrow green lines at 537 and 558 nm and minor peaks at 413, 461, 665, and 706 nm. There is also emission at 1000 nm and 1540 nm in the IR. The green emission lines have been identified as Er transitions from the 2H11/2 and 4S3/2 levels to the 4I15/2 ground state. The IR emission lines have been identified as transitions from the 4I13/2 and 4I13/2 levels to the 4I15/2 ground state. EL intensity for visible and IR light has a sub-unity power law dependence on bias current. An external quantum efficiency of 0.1% has also been demonstrated under a reverse bias current of 3.85 mA.

Ion Implanted Er and Tb in SiO2 for Electroluminescence in MOS Diodes

2000 ◽  
Vol 647 ◽  
Author(s):  
Ch. Buchal ◽  
S. Coffa ◽  
S. Wang ◽  
R. Carius
Keyword(s):  
Rare Earth ◽  
Electric Fields ◽  
Room Temperature ◽  
Rare Earth Ions ◽  
Oxide Semiconductor ◽  
Impact Excitation ◽  
Hot Electron ◽  
Experimental Proof ◽  
Light Generation ◽  
Mos Structures

AbstractEfficient infra-red and visible electroluminescence(EL) has been obtained from implanted rare earth ions in the SiO2 of a silicon-metal-oxide-semiconductor (MOS) diode structure at room temperature. The rare earth ions are excited by the direct impact of hot electrons tunneling through the oxide at electric fields larger than 6 MV/cm. The internal quantum efficiencies of Er and Tb implanted MOS diodes are estimated to be 10 % and 3 %, respectively. The hgh quantum efficiency is due to the high impact excitation cross-section of more than 10− 15cm2. These observations on MOS structures are an experimental proof for efficient light generation by hot electron impact.

scholarly journals Structure, Luminescence, and Magnetic Properties of Crystalline Manganese Tungstate Doped with Rare Earth Ion

Materials ◽  
2021 ◽  
Vol 14 (13) ◽  
pp. 3717
Author(s):  
Jae-Young Jung ◽  
Soung-Soo Yi ◽  
Dong-Hyun Hwang ◽  
Chang-Sik Son
Keyword(s):  
Magnetic Field ◽  
Rare Earth ◽  
Sintering Temperature ◽  
Luminescent Properties ◽  
Concentration Quenching ◽  
Rare Earth Ions ◽  
Precipitation Method ◽  
Rare Earth Ion ◽  
Co Precipitation ◽  
Quenching Phenomenon

The precursor prepared by co-precipitation method was sintered at various temperatures to synthesize crystalline manganese tungstate (MnWO4). Sintered MnWO4 showed the best crystallinity at a sintering temperature of 800 °C. Rare earth ion (Dysprosium; Dy3+) was added when preparing the precursor to enhance the magnetic and luminescent properties of crystalline MnWO4 based on these sintering temperature conditions. As the amount of rare earth ions was changed, the magnetic and luminescent characteristics were enhanced; however, after 0.1 mol.%, the luminescent characteristics decreased due to the concentration quenching phenomenon. In addition, a composite was prepared by mixing MnWO4 powder, with enhanced magnetism and luminescence properties due to the addition of dysprosium, with epoxy. To one of the two prepared composites a magnetic field was applied to induce alignment of the MnWO4 particles. Aligned particles showed stronger luminescence than the composite sample prepared with unsorted particles. As a result of this, it was suggested that it can be used as phosphor and a photosensitizer by utilizing the magnetic and luminescent properties of the synthesized MnWO4 powder with the addition of rare earth ions.

The magnetic and spectroscopic properties of certain rare-earth double nitrates

1955 ◽  
Vol 232 (1191) ◽  
pp. 458-474 ◽  
Keyword(s):  
Rare Earth ◽  
Electric Field ◽  
Spectroscopic Properties ◽  
Rare Earth Ions ◽  
Rare Earth Ion ◽  
Crystalline Electric Field ◽  
Paramagnetic Resonance ◽  
Systematic Fashion ◽  
Resonance Data ◽  
Rare Earth Series

The theory that has been developed for rare-earth ions in crystals is here applied to the double nitrates. The paramagnetic resonance data and certain spectroscopic properties of the different rare-earth double nitrates, depending as they do on the crystalline electric field at a rare-earth ion, are related to the six parameters through which the field is defined. It is found that most of the experimental results can be fitted to values of the parameters that vary in a systematic fashion along the rare-earth series.

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