The Electrical and Optical Properties of Point and Extended Defects in Silicon Arising from Oxygen Precipitation

2007 ◽  
pp. 225-232
Author(s):  
R. Jones
Keyword(s):  
Optical Properties ◽  
Extended Defects ◽  
Electrical And Optical Properties ◽  
Oxygen Precipitation

The Electrical and Optical Properties of Point and Extended Defects in Silicon Arising from Oxygen Precipitation

2007 ◽  
Vol 131-133 ◽  
pp. 225-232 ◽  
Author(s):  
R. Jones
Keyword(s):  
Optical Properties ◽  
Electrical Properties ◽  
Electrical Activity ◽  
Theoretical Work ◽  
Precipitation Process ◽  
Extended Defects ◽  
Dislocation Loops ◽  
Electrical And Optical Properties ◽  
Oxygen Precipitation ◽  
Oxygen Atoms

Oxygen precipitation in Si is a complex set of processes which has been studied over many years. Here we review theoretical work relating to the precipitation process. At temperatures around 450°C oxygen atoms become mobile and form a family of thermal double donors. The structure of these defects and the origin of their electrical activity is discussed. At temperature around 650°C these donors disappear and there is a growth of SiO2 precipitates along with rod like defects which are extended defects involving Si interstitials. At higher temperatures these collapse into dislocation loops. The structure and electrical properties of the rod like defect are described and compared with those of dislocations.

ELECTRICAL AND OPTICAL PROPERTIES OF UHV SUBLIMED a-As

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-869-C4-872
Author(s):  
R. T. Phillips ◽  
A. J. Mackintosh ◽  
A. D. Yoffe
Keyword(s):  
Optical Properties ◽  
Electrical And Optical Properties

Electrical and Optical Properties of Polypyrrole and Polyaniline Blends

2020 ◽  
Vol 62 (6) ◽  
pp. 680-690
Author(s):  
Tekalign A. Tikish ◽  
Ashok Kumar ◽  
Jung Yong Kim
Keyword(s):  
Optical Properties ◽  
Electrical And Optical Properties

Structural, electrical, and optical properties of annealed InN films grown on sapphire and silicon substrates

2019 ◽  
Vol 672 ◽  
pp. 114-119 ◽  
Author(s):  
Michal Kučera ◽  
Adam Adikimenakis ◽  
Edmund Dobročka ◽  
Róbert Kúdela ◽  
Milan Ťapajna ◽  
...  
Keyword(s):  
Optical Properties ◽  
Silicon Substrates ◽  
Electrical And Optical Properties

scholarly journals Transparent TiO2/Cu/TiO2 Multilayer for Electrothermal Application

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 1024
Author(s):  
Jingjing Peng ◽  
Changshan Hao ◽  
Hongyan Liu ◽  
Yue Yan
Keyword(s):  
Optical Properties ◽  
Heating Rate ◽  
Figure Of Merit ◽  
Annealing Temperature ◽  
Critical Thickness ◽  
Experimental Results ◽  
Tio2 Layer ◽  
Electrical And Optical Properties ◽  
Partial Crystallization

Highly transparent indium-free multilayers of TiO2/Cu/TiO2 were obtained by means of annealing. The effects of Cu thickness and annealing temperature on the electrical and optical properties were investigated. The critical thickness of Cu mid-layer with optimal electrical and optical properties was 10 nm, with the figure of merit reaching as high as 5 × 10−3 Ω−1. Partial crystallization of the TiO2 layer enhanced the electrical and optical properties upon annealing. Electrothermal experiments showed that temperatures of more than 100 °C can be reached at a heating rate of 2 °C/s without any damage to the multilayers. The experimental results indicate that reliable transparent TiO2/Cu/TiO2 multilayers can be used for electrothermal application.

scholarly journals The effect of H radicals on microstructure and electrical and optical properties of sputtered ZnO:Al films

AIP Advances ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 035202
Author(s):  
Changshan Hao ◽  
Jingjing Peng ◽  
Yanli Zhong ◽  
Xuan Zhang ◽  
Pei Lei ◽  
...  
Keyword(s):  
Optical Properties ◽  
Electrical And Optical Properties
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