The Study on the Microstructure and Electrical Property of Boron and Sulfur Co-Doped Diamond Films by Chemical Vapor Deposition

2012 ◽  
Vol 184-185 ◽  
pp. 1343-1347
Author(s):  
Rong Bin Li ◽  
Xiang Hu Wang ◽  
Jing Zhang
Keyword(s):  
Grain Boundaries ◽  
Electron Emission ◽  
Measurement Techniques ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Si Substrates ◽  
Average Size

The atomic-scale microstructure and electron emission properties of boron and sulfur (denoted as B-S) codoped diamond films grown on high-temperature and high-pressure (HTHP) diamond and Si substrates were investigated using atom force microscopy (AFM), scanning tunneling microscopy (STM) and current imaging tunneling spectroscopy (CITS) measurement techniques. The films grown on Si consisted of large grains with secondary nucleation, whereas those on HTHP diamond are composed of well-developed polycrystalline facets with an average size of 10–50 nm. Large tunneling currents were observed at some grain boundaries, and the emission character is better at the grain boundaries than at the center of the crystal. The codoped films grown on HTHP diamond have an almost uniform electron emission efficiency at grain boundaries or crystalline facets, which indicates that the doped atoms are uniformly distributed in the films. The local I-V characteristics for films deposited on Si or HTHP diamond substrates indicate n-type conduction.

scholarly journals Study on the Microstructure and Electrical Properties of Boron and Sulfur Codoped Diamond Films Deposited Using Chemical Vapor Deposition

2014 ◽  
Vol 2014 ◽  
pp. 1-7
Author(s):  
Zhang Jing ◽  
Li Rongbin ◽  
Wang Xianghu ◽  
Wei Xicheng
Keyword(s):  
Grain Boundaries ◽  
Measurement Techniques ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Force Microscopy ◽  
Si Substrates ◽  
Average Size

The atomic-scale microstructure and electron emission properties of boron and sulfur (denoted as B-S) codoped diamond films grown on high-temperature and high-pressure (HTHP) diamond and Si substrates were investigated using atom force microscopy (AFM), scanning tunneling microscopy (STM), secondary ion mass spectroscopy (SIMS), and current imaging tunneling spectroscopy (CITS) measurement techniques. The films grown on Si consisted of large grains with secondary nucleation, whereas those on HTHP diamond are composed of well-developed polycrystalline facets with an average size of 10–50 nm. SIMS analyses confirmed that sulfur was successfully introduced into diamond films, and a small amount of boron facilitated sulfur incorporation into diamond. Large tunneling currents were observed at some grain boundaries, and the emission character was better at the grain boundaries than that at the center of the crystal. The films grown on HTHP diamond substrates were much more perfect with higher quality than the films deposited on Si substrates. The localI-Vcharacteristics for films deposited on Si or HTHP diamond substrates indicate n-type conduction.

Si(111)-(7 × 7) Under Silane UHV-LPCVD: A STM Study

1998 ◽  
Vol 05 (01) ◽  
pp. 55-61
Author(s):  
L. Masson ◽  
D. Albertini ◽  
F. Thibaudau ◽  
F. Salvan
Keyword(s):  
Chemical Vapor ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Chemical Vapor Deposition Growth ◽  
Mbe Growth ◽  
Chemical Mechanisms ◽  
Molecular Beam Epitaxial ◽  
Pressure Chemical ◽  
Major Chemical

In this work, we present a scanning tunneling microscopy (STM) study of the LPCVD (low pressure chemical vapor deposition) growth of Si on Si(111)-(7 × 7) using silane ( SiH 4) decomposition. Surface reactivities have been studied at room and high temperature (700 < T < 800  K ), and the major chemical mechanisms have been identified at an atomic scale on the basis of room temperature STM images of the reacted surfaces. The study provides a better understanding of nucleation and initial stages of growth. More particularly, we show that the growth kinetics and the final structure of the film are different from what is observed by molecular beam epitaxial (MBE) growth.

Scanning tunneling microscopy on chemical vapor deposited diamond films

1991 ◽  
Vol 59 (3) ◽  
pp. 295-297 ◽  
Author(s):  
H.‐G. Busmann ◽  
H. Sprang ◽  
I. V. Hertel ◽  
W. Zimmermann‐Edling ◽  
H.‐J. Güntherodt
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Chemical Vapor Deposited

Investigating point defects in irradiated boron-doped diamond films by temperature-dependent electrical properties and scanning tunneling microscopy and spectroscopy

2010 ◽  
Vol 25 (3) ◽  
pp. 444-457 ◽  
Author(s):  
Sanju Gupta ◽  
John Farmer ◽  
Dario Daghero ◽  
Renato Gonnelli
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Point Defects ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Temperature Dependent ◽  
Boron Doped Diamond ◽  
Boron Doped

We report temperature-dependent electrical resistivity (or dc conductivity, σdc) down to 4 K for pristine and gamma-irradiated microwave plasma-assisted chemical vapor-deposited boron-doped diamond films with [B]/[C]gas = 4000 ppm to gain insights into the nature of conduction mechanism, distribution, and kinetics of point defects generated due to gamma irradiation prompted by the article [Gupta et al., J. Mater. Res.24, 1498 (2009)]. The pristine samples exhibit typical metallic conduction up to 50 K and with reduction in temperature to 25 K, the σdc decreases monotonically followed by saturation at 4 K, suggesting “disordered” metal or “localized” behavior. For irradiated films, continuous increasing resistivity with decreasing temperature demonstrates semiconducting behavior with thermal activation/hopping conduction phenomena. It is intriguing to propose that irradiation leads to substantial hydrogen redistribution leading to unexpected low-temperature resistivity behavior. Scanning tunneling microscopy/spectroscopy helped to illustrate local grain and grain boundary effects.

scholarly journals Scanning tunneling microscopy of the electronic structure of chemical vapor deposited diamond films

1993 ◽  
Vol 62 (16) ◽  
pp. 1889-1891 ◽  
Author(s):  
J. M. Perez ◽  
C. Lin ◽  
W. Rivera ◽  
R. C. Hyer ◽  
M. Green ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Scanning Tunneling Microscopy ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Chemical Vapor Deposited
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