scholarly journals Study on the Microstructure and Electrical Properties of Boron and Sulfur Codoped Diamond Films Deposited Using Chemical Vapor Deposition

2014 ◽  
Vol 2014 ◽  
pp. 1-7
Author(s):  
Zhang Jing ◽  
Li Rongbin ◽  
Wang Xianghu ◽  
Wei Xicheng
Keyword(s):  
Grain Boundaries ◽  
Measurement Techniques ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Force Microscopy ◽  
Si Substrates ◽  
Average Size

The atomic-scale microstructure and electron emission properties of boron and sulfur (denoted as B-S) codoped diamond films grown on high-temperature and high-pressure (HTHP) diamond and Si substrates were investigated using atom force microscopy (AFM), scanning tunneling microscopy (STM), secondary ion mass spectroscopy (SIMS), and current imaging tunneling spectroscopy (CITS) measurement techniques. The films grown on Si consisted of large grains with secondary nucleation, whereas those on HTHP diamond are composed of well-developed polycrystalline facets with an average size of 10–50 nm. SIMS analyses confirmed that sulfur was successfully introduced into diamond films, and a small amount of boron facilitated sulfur incorporation into diamond. Large tunneling currents were observed at some grain boundaries, and the emission character was better at the grain boundaries than that at the center of the crystal. The films grown on HTHP diamond substrates were much more perfect with higher quality than the films deposited on Si substrates. The localI-Vcharacteristics for films deposited on Si or HTHP diamond substrates indicate n-type conduction.

The Study on the Microstructure and Electrical Property of Boron and Sulfur Co-Doped Diamond Films by Chemical Vapor Deposition

2012 ◽  
Vol 184-185 ◽  
pp. 1343-1347
Author(s):  
Rong Bin Li ◽  
Xiang Hu Wang ◽  
Jing Zhang
Keyword(s):  
Grain Boundaries ◽  
Electron Emission ◽  
Measurement Techniques ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Si Substrates ◽  
Average Size

The atomic-scale microstructure and electron emission properties of boron and sulfur (denoted as B-S) codoped diamond films grown on high-temperature and high-pressure (HTHP) diamond and Si substrates were investigated using atom force microscopy (AFM), scanning tunneling microscopy (STM) and current imaging tunneling spectroscopy (CITS) measurement techniques. The films grown on Si consisted of large grains with secondary nucleation, whereas those on HTHP diamond are composed of well-developed polycrystalline facets with an average size of 10–50 nm. Large tunneling currents were observed at some grain boundaries, and the emission character is better at the grain boundaries than at the center of the crystal. The codoped films grown on HTHP diamond have an almost uniform electron emission efficiency at grain boundaries or crystalline facets, which indicates that the doped atoms are uniformly distributed in the films. The local I-V characteristics for films deposited on Si or HTHP diamond substrates indicate n-type conduction.

Heterogeneous Oxidation and Precipitation of Aqueous Mn(II) at the Goethite Surface: A SPM Study

1998 ◽  
Vol 4 (S2) ◽  
pp. 600-601
Author(s):  
John Rakovan ◽  
F. Hochella Michael
Keyword(s):  
Lateral Force ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Mineral Surfaces ◽  
Tunneling Microscopy ◽  
Heterogeneous Oxidation ◽  
Force Microscopy ◽  
Solution Interface ◽  
Atomic Force

Since its invention inl982 scanning probe microscopy (SPM) has become an important analytical tool in every branch of physical science. The two most widely used types of SPM are atomic force Microscopy (AFM) and scanning tunneling microscopy (STM). Both AFM and STM allow measurement of the microtopography of a surface down to the atomic scale. Many spin-off applications such as lateral force and magnetic force allow measurement of a variety of the physical properties of a surface while imaging its microtopography. SPM can be done in both air and liquid and hence can be used to observe the interactions that take place at a solid-solution interface.SPM has been used in mineralogy and geochemistry since 1989. Here as in other applications the great strength of SPM is in the characterization of the heterogeneous nature of mineral surfaces and the ability to observe many geochemical processes in real time.

Si(111)-(7 × 7) Under Silane UHV-LPCVD: A STM Study

1998 ◽  
Vol 05 (01) ◽  
pp. 55-61
Author(s):  
L. Masson ◽  
D. Albertini ◽  
F. Thibaudau ◽  
F. Salvan
Keyword(s):  
Chemical Vapor ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Chemical Vapor Deposition Growth ◽  
Mbe Growth ◽  
Chemical Mechanisms ◽  
Molecular Beam Epitaxial ◽  
Pressure Chemical ◽  
Major Chemical

In this work, we present a scanning tunneling microscopy (STM) study of the LPCVD (low pressure chemical vapor deposition) growth of Si on Si(111)-(7 × 7) using silane ( SiH 4) decomposition. Surface reactivities have been studied at room and high temperature (700 < T < 800  K ), and the major chemical mechanisms have been identified at an atomic scale on the basis of room temperature STM images of the reacted surfaces. The study provides a better understanding of nucleation and initial stages of growth. More particularly, we show that the growth kinetics and the final structure of the film are different from what is observed by molecular beam epitaxial (MBE) growth.

scholarly journals Subatomic deformation driven by vertical piezoelectricity from CdS ultrathin films

2016 ◽  
Vol 2 (7) ◽  
pp. e1600209 ◽  
Author(s):  
Xuewen Wang ◽  
Xuexia He ◽  
Hongfei Zhu ◽  
Linfeng Sun ◽  
Wei Fu ◽  
...  
Keyword(s):  
Ultrathin Films ◽  
High Performance ◽  
Piezoelectric Materials ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Force Microscopy ◽  
Microelectromechanical Devices ◽  
Cds Thin Films ◽  
Piezoelectric Force Microscopy

Driven by the development of high-performance piezoelectric materials, actuators become an important tool for positioning objects with high accuracy down to nanometer scale, and have been used for a wide variety of equipment, such as atomic force microscopy and scanning tunneling microscopy. However, positioning at the subatomic scale is still a great challenge. Ultrathin piezoelectric materials may pave the way to positioning an object with extreme precision. Using ultrathin CdS thin films, we demonstrate vertical piezoelectricity in atomic scale (three to five space lattices). With an in situ scanning Kelvin force microscopy and single and dual ac resonance tracking piezoelectric force microscopy, the vertical piezoelectric coefficient (d33) up to 33 pm·V−1 was determined for the CdS ultrathin films. These findings shed light on the design of next-generation sensors and microelectromechanical devices.

scholarly journals Atomic Resolution with the Atomic Force Microscope

1995 ◽  
Vol 3 (4) ◽  
pp. 6-7
Author(s):  
Stephen W. Carmichael
Keyword(s):  
Atomic Force Microscopy ◽  
Scanning Tunneling Microscopy ◽  
Atomic Force Microscope ◽  
Recent Article ◽  
Atomic Scale ◽  
Atomic Resolution ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Force Microscopy ◽  
Atomic Force

For biologic studies, atomic force microscopy (AFM) has been prevailing over scanning tunneling microscopy (STM) because it has the capability of imaging non-conducting biologic specimens. However, STM generally gives better resolution than AFM, and we're talking about resolution on the atomic scale. In a recent article, Franz Giessibl (Atomic resolution of the silicon (111)- (7X7) surface by atomic force microscopy, Science 267:68-71, 1995) has demonstrated that atoms can be imaged by AFM.

Scanning tunneling microscopy on chemical vapor deposited diamond films

1991 ◽  
Vol 59 (3) ◽  
pp. 295-297 ◽  
Author(s):  
H.‐G. Busmann ◽  
H. Sprang ◽  
I. V. Hertel ◽  
W. Zimmermann‐Edling ◽  
H.‐J. Güntherodt
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Chemical Vapor Deposited

scholarly journals Electron transfer between anatase TiO2 and an O2 molecule directly observed by atomic force microscopy

2017 ◽  
Vol 114 (13) ◽  
pp. E2556-E2562 ◽  
Author(s):  
Martin Setvin ◽  
Jan Hulva ◽  
Gareth S. Parkinson ◽  
Michael Schmid ◽  
Ulrike Diebold
Keyword(s):  
Atomic Force Microscopy ◽  
Electron Transfer ◽  
Photoelectron Spectroscopy ◽  
Uv Light ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Near Surface ◽  
Force Microscopy ◽  
Atomic Force

Activation of molecular oxygen is a key step in converting fuels into energy, but there is precious little experimental insight into how the process proceeds at the atomic scale. Here, we show that a combined atomic force microscopy/scanning tunneling microscopy (AFM/STM) experiment can both distinguish neutral O2 molecules in the triplet state from negatively charged (O2)− radicals and charge and discharge the molecules at will. By measuring the chemical forces above the different species adsorbed on an anatase TiO2 surface, we show that the tip-generated (O2)− radicals are identical to those created when (i) an O2 molecule accepts an electron from a near-surface dopant or (ii) when a photo-generated electron is transferred following irradiation of the anatase sample with UV light. Kelvin probe spectroscopy measurements indicate that electron transfer between the TiO2 and the adsorbed molecules is governed by competition between electron affinity of the physisorbed (triplet) O2 and band bending induced by the (O2)− radicals. Temperature–programmed desorption and X-ray photoelectron spectroscopy data provide information about thermal stability of the species, and confirm the chemical identification inferred from AFM/STM.

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