Design on the Amplifier Circuit of Metal-Oxide Semiconductor Gas-Sensitive Sensor

2012 ◽  
Vol 220-223 ◽  
pp. 1939-1942 ◽  
Author(s):  
Xi Feng Liang ◽  
Li Hao Liu
Keyword(s):  
Metal Oxide ◽  
Detection System ◽  
Low Cost ◽  
High Sensitivity ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gas Detection ◽  
Amplifier Circuit ◽  
Detection Systems ◽  
System A

Metal-oxide semiconductor gas-sensitive sensors have various advantages as the basic devices of gas detection systems, such as high sensitivity, fast responsibility and low cost, etc. They are widely applied to many fields. Amplifier circuit is an important section of gas detection system. A new type of amplifier circuit including a three-stage operational amplifier was designed in the paper which can effectively eliminate the influence of the follow-up circuit on the sensor output. Theory analysis and experimental simulations were performed. The results show that the output voltage signals have a linear relation with the concentrations of the detected gas.

The Effect of Strain on the Formation of Dislocations at the SiGe/Si Interface

MRS Bulletin ◽  
1996 ◽  
Vol 21 (4) ◽  
pp. 38-44 ◽  
Author(s):  
F.K. LeGoues
Keyword(s):  
Metal Oxide ◽  
High Speed ◽  
High Performance ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Design Rule ◽  
Strained Si

Recently much interest has been devoted to Si-based heteroepitaxy, and in particular, to the SiGe/Si system. This is mostly for economical reasons: Si-based technology is much more advanced, is widely available, and is cheaper than GaAs-based technology. SiGe opens the door to the exciting (and lucrative) area of Si-based high-performance devices, although optical applications are still limited to GaAs-based technology. Strained SiGe layers form the base of heterojunction bipolar transistors (HBTs), which are currently used in commercial high-speed analogue applications. They promise to be low-cost compared to their GaAs counterparts and give comparable performance in the 2-20-GHz regime. More recently we have started to investigate the use of relaxed SiGe layers, which opens the door to a wider range of application and to the use of SiGe in complementary metal oxide semiconductor (CMOS) devices, which comprise strained Si and SiGe layers. Some recent successes include record-breaking low-temperature electron mobility in modulation-doped layers where the mobility was found to be up to 50 times better than standard Si-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Even more recently, SiGe-basedp-type MOSFETS were built with oscillation frequency of up to 50 GHz, which is a new record, in anyp-type material for the same design rule.

High Sensitivity Dynamic Range Enhanced Complementary Metal–Oxide–Semiconductor Imager with Noise Suppression

2008 ◽  
Vol 47 (4) ◽  
pp. 2761-2766
Author(s):  
Satoru Adachi ◽  
Woonghee Lee ◽  
Nana Akahane ◽  
Hiromichi Oshikubo ◽  
Koichi Mizobuchi ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Noise Suppression ◽  
Dynamic Range ◽  
High Sensitivity ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor

An optical relay approach to very low cost hybrid polymer-complementary metal-oxide semiconductor electrophoresis instrumentation

2014 ◽  
Vol 1349 ◽  
pp. 122-128 ◽  
Author(s):  
Gordon H. Hall ◽  
David L. Sloan ◽  
Tianchi Ma ◽  
Madeline H. Couse ◽  
Stephane Martel ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Low Cost ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Hybrid Polymer
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