Integration of Microcoil Magnetic Manipulation with High-Sensitivity Complementary Metal–Oxide–Semiconductor Photosensor Detection in Bio-Analyses

2010 ◽  
Vol 49 (4) ◽  
pp. 04DL06
Author(s):  
Chih-Yang Chen ◽  
Chrong-Jung Lin ◽  
Ya-Chin King
2008 ◽  
Vol 47 (4) ◽  
pp. 2761-2766
Author(s):  
Satoru Adachi ◽  
Woonghee Lee ◽  
Nana Akahane ◽  
Hiromichi Oshikubo ◽  
Koichi Mizobuchi ◽  
...  

2002 ◽  
Vol 41 (Part 1, No. 4B) ◽  
pp. 2326-2328
Author(s):  
Hsiu-Yu Cheng ◽  
Hsien-Chun Chang ◽  
Sing-Rong Li ◽  
Liang-Wei Lai ◽  
Cheng-Hsiao Lai ◽  
...  

2021 ◽  
Vol 50 (16) ◽  
pp. 5540-5551
Author(s):  
Almudena Notario-Estévez ◽  
Xavier López ◽  
Coen de Graaf

This computational study presents the molecular conduction properties of polyoxovanadates V6O19 (Lindqvist-type) and V18O42, as possible successors of the materials currently in use in complementary metal–oxide semiconductor (CMOS) technology.


Sensors ◽  
2021 ◽  
Vol 21 (5) ◽  
pp. 1683
Author(s):  
Winai Jaikla ◽  
Fabian Khateb ◽  
Tomasz Kulej ◽  
Koson Pitaksuttayaprot

This paper proposes the simulated and experimental results of a universal filter using the voltage differencing differential difference amplifier (VDDDA). Unlike the previous complementary metal oxide semiconductor (CMOS) structures of VDDDA that is present in the literature, the present one is compact and simple, owing to the employment of the multiple-input metal oxide semiconductor (MOS) transistor technique. The presented filter employs two VDDDAs, one resistor and two grounded capacitors, and it offers low-pass: LP, band-pass: BP, band-reject: BR, high-pass: HP and all-pass: AP responses with a unity passband voltage gain. The proposed universal voltage mode filter has high input impedances and low output impedance. The natural frequency and bandwidth are orthogonally controlled by using separated transconductance without affecting the passband voltage gain. For a BP filter, the root mean square (RMS) of the equivalent output noise is 46 µV, and the third intermodulation distortion (IMD3) is −49.5 dB for an input signal with a peak-to peak of 600 mV, which results in a dynamic range (DR) of 73.2 dB. The filter was designed and simulated in the Cadence environment using a 0.18-µm CMOS process from Taiwan semiconductor manufacturing company (TSMC). In addition, the experimental results were obtained by using the available commercial components LM13700 and AD830. The simulation results are in agreement with the experimental one that confirmed the advantages of the filter.


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