Giant Electroresistance Induced by Electric Currents in Epitaxial Thin Films of Pr0.7Sr0.3MnO3

2013 ◽  
Vol 483 ◽  
pp. 130-133
Author(s):  
He Yan Liu ◽  
Liang Zhou ◽  
Ying Li ◽  
Guo Dong Liu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electric Current ◽  
Current Density ◽  
Epitaxial Thin Films ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Current Densities ◽  
A Current ◽  
Peak Resistance

Electric-current induced electroresistance effect has been investigated in epitaxial Pr0.7Sr0.3MnO3thin film grown on the (100) SrTiO3substrate. A significant change ~38% in the ratio of the peak resistance at different currents with a current density up to ~3.3×103A/cm2was achieved. Such an ER effect is more remarkable in comparing with that reported in other manganite oxides with similar current densities. Compared with that of the as-grown films, the electroresistance of the post-annealed films is smaller, while the ER effect (~14%) is obtained. Although the nature behind such an electroresistance effect has not been well understood, the field tunability of the metal/insulator transition and the electroresistance effect induced by currents might be of potential for various applications such as filed effect devices.

Metal insulator transition with ferrimagnetic order in epitaxial thin films of spinel NiCo2O4

2012 ◽  
Vol 100 (3) ◽  
pp. 032102 ◽  
Author(s):  
Punam Silwal ◽  
Ludi Miao ◽  
Ilan Stern ◽  
Xiaolan Zhou ◽  
Jin Hu ◽  
...  
Keyword(s):  
Thin Films ◽  
Insulator Transition ◽  
Epitaxial Thin Films ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Spinel Nico2o4

scholarly journals Anisotropic Metal-Insulator Transition in Epitaxial Thin Films

2004 ◽  
Vol 92 (22) ◽  
Author(s):  
I. B. Altfeder ◽  
X. Liang ◽  
T. Yamada ◽  
D. M. Chen ◽  
V. Narayanamurti
Keyword(s):  
Thin Films ◽  
Insulator Transition ◽  
Epitaxial Thin Films ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Anisotropic Metal

Itinerant ferromagnetism and geometrically suppressed metal-insulator transition in epitaxial thin films of Ca2RuO4

2012 ◽  
Vol 100 (5) ◽  
pp. 052401 ◽  
Author(s):  
Ludi Miao ◽  
Punam Silwal ◽  
Xiaolan Zhou ◽  
Ilan Stern ◽  
Jin Peng ◽  
...  
Keyword(s):  
Thin Films ◽  
Insulator Transition ◽  
Epitaxial Thin Films ◽  
Metal Insulator Transition ◽  
Itinerant Ferromagnetism ◽  
Metal Insulator

Increased metal-insulator transition temperatures in epitaxial thin films of V2O3 prepared in reduced oxygen environments

2011 ◽  
Vol 98 (15) ◽  
pp. 152105 ◽  
Author(s):  
J. Brockman ◽  
N. P. Aetukuri ◽  
T. Topuria ◽  
M. G. Samant ◽  
K. P. Roche ◽  
...  
Keyword(s):  
Thin Films ◽  
Insulator Transition ◽  
Epitaxial Thin Films ◽  
Transition Temperatures ◽  
Metal Insulator Transition ◽  
Metal Insulator

Strain stabilized metal–insulator transition in epitaxial thin films of metallic oxide CaRuO3

1997 ◽  
Vol 70 (22) ◽  
pp. 3035-3037 ◽  
Author(s):  
R. A. Rao ◽  
Q. Gan ◽  
C. B. Eom ◽  
R. J. Cava ◽  
Y. Suzuki ◽  
...  
Keyword(s):  
Thin Films ◽  
Insulator Transition ◽  
Epitaxial Thin Films ◽  
Metallic Oxide ◽  
Metal Insulator Transition ◽  
Metal Insulator

Thickness-dependent anisotropy of metal-insulator transition in (110)-VO 2 /TiO 2 epitaxial thin films

2017 ◽  
Vol 699 ◽  
pp. 575-580 ◽  
Author(s):  
Kai Hu ◽  
Yuanjun Yang ◽  
Bin Hong ◽  
Jiangtao Zhao ◽  
Zhenlin Luo ◽  
...  
Keyword(s):  
Thin Films ◽  
Insulator Transition ◽  
Epitaxial Thin Films ◽  
Metal Insulator Transition ◽  
Metal Insulator

Anomalous Behavior of Peak Resistance Temperature for low x in As-Deposited La1-xCaxMnO3 Films on NdGao3 and SrTiO3 Substrates

1999 ◽  
Vol 574 ◽  
Author(s):  
P. R. Broussard ◽  
V. C. Cestone
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Anomalous Behavior ◽  
Peak Temperature ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Scaling Relationship ◽  
Low X ◽  
Deposited Films ◽  
Peak Resistance

AbstractWe have grown thin films of La1-xCaxMnO3 using off-axis cosputtering for x ≤ 1/3 onto (001) NdGaO3 and (100) SrTiO3 substrates from individual targets of LaMnO3 and La2/3Ca1/3MnO3. As-deposited films of La2/3Ca1/3MnO3 on NdGaO3 have a peak resistance temperature of ≈ 260 K. We see a difference in the peak temperature between the two types of substrates of ≈ 15 K, with samples on NdGaO3 having higher peak temperatures. As the value of x is reduced from 1/3, the peak resistance temperature decreases until x ≈ 0.15, when the peak temperature has an upturn. Even down to x=0 we still observe a metal-insulator transition (at 185 K) for films on NdGaO3, while samples on SrTiO3 show only activated behavior. We also find a scaling relationship between the peak temperature and the resistivity activation energy of the films.

Microstructural characterization of YBa2Cu3O7-x thin films formed by metalorganic CVD

1991 ◽  
Vol 49 ◽  
pp. 1080-1081
Author(s):  
P. Lu ◽  
W. Huang ◽  
C.S. Chern ◽  
Y.Q. Li ◽  
J. Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Film Growth ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Ion Milling ◽  
Conventional Grinding

The YBa2Cu3O7-x thin films formed by metalorganic chemical vapor deposition(MOCVD) have been reported to have excellent superconducting properties including a sharp zero resistance transition temperature (Tc) of 89 K and a high critical current density of 2.3x106 A/cm2 or higher. The origin of the high critical current in the thin film compared to bulk materials is attributed to its structural properties such as orientation, grain boundaries and defects on the scale of the coherent length. In this report, we present microstructural aspects of the thin films deposited on the (100) LaAlO3 substrate, which process the highest critical current density.Details of the thin film growth process have been reported elsewhere. The thin films were examined in both planar and cross-section view by electron microscopy. TEM sample preparation was carried out using conventional grinding, dimpling and ion milling techniques. Special care was taken to avoid exposure of the thin films to water during the preparation processes.

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