Design and Simulation of S-Band Low Noise Amplifier Based on ATF-54143

2014 ◽  
Vol 577 ◽  
pp. 615-619
Author(s):  
Hai Peng Wang ◽  
Shu Hui Yang ◽  
Meng Lu Feng ◽  
Yin Chao Chen
Keyword(s):  
Standing Wave ◽  
Output Voltage ◽  
Noise Figure ◽  
High Electron Mobility Transistor ◽  
Input Voltage ◽  
Low Noise ◽  
Simulation Software ◽  
Voltage Standing Wave Ratio ◽  
High Electron ◽  
Noise Amplifier

This design used a low noise enhanced high electron mobility transistor ATF54143 and Agilent's ADS simulation software to achieve the good performance of operating frequency at 2.45GHz, noise figure (NF) is less than 0.8dB, band gain (S21) is greater than 15dB, input voltage standing-wave ratio (VSWR1) is less than 1.4dB, output voltage standing-wave ratio (VSWR2) is less than 1.6dB.

scholarly journals Noise Characterization in InAlAs/InGaAs/InP pHEMTs for Low Noise Applications

2017 ◽  
Vol 7 (1) ◽  
pp. 176
Author(s):  
Z. A. Djennati ◽  
K. Ghaffour
Keyword(s):  
Noise Figure ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
Noise Model ◽  
Good Prediction ◽  
High Electron ◽  
Source Impedance ◽  
Noise Amplifier ◽  
Noise Characterization ◽  
Noise Models

In this paper, a noise revision of an InAlAs/InGaAs/InP psoeudomorphic high electron mobility transistor (pHEMT) in presented. The noise performances of the device were predicted over a range of frequencies from 1GHz to 100GHz. The minimum noise figure (NFmin), the noise resistance (Rn) and optimum source impedance (Zopt) were extracted using two approaches. A physical model that includes diffusion noise and G-R noise models and an analytical model based on an improved PRC noise model that considers the feedback capacitance Cgd. The two approaches presented matched results allowing a good prediction of the noise behaviour. The pHEMT was used to design a single stage S-band low noise amplifier (LNA). The LNA demonstrated a gain of 12.6dB with a return loss coefficient of 2.6dB at the input and greater than -7dB in the output and an overall noise figure less than 1dB.

scholarly journals Perancangan Low Noise Amplifier dengan Teknik Non Simultaneous Conjugate Match untuk Aplikasi Radar S-Band

2016 ◽  
Vol 15 (2) ◽  
pp. 45
Author(s):  
Yana Taryana ◽  
Achmad Munir ◽  
Yaya Sulaeman ◽  
Dedi
Keyword(s):  
Standing Wave ◽  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Voltage Standing Wave Ratio ◽  
Design System ◽  
Trade Off ◽  
Noise Amplifier

Radar merupakan sistem pemancar dan penerima gelombang elektromagnetik untuk mendeteksi, mengukur jarak dan membuat peta benda benda seperti pesawat terbang, kapal laut, kendaran bermotor dan informasi cuaca. Salah satu kendala yang dihadapi pada sistem radar adalah sinyal pantulan yang memiliki daya yang rendah sehingga kualitas penerimaan menjadi kurang baik. Untuk mengatasi kendala tersebut dibutuhkan penguat daya pada sistem penerima yaitu Low Noise Amplifier (LNA). Oleh karena itu, tulisan ini memaparkan perancangan LNA dengan menggunakan teknik Non Simultaneous Conjugate Match (NSCM) untuk aplikasi radar S-Band. Teknik ini memberikan kemudahan dalam menentukan nilai trade off (TO) untuk nilai gain, noise figure (NF) dan Voltage Standing Wave Ratio (VSWR) yang diinginkan. Dalam proses perancangannya, perangkat lunak Agilent Design System (ADS) 2011 digunakan untuk mendapatkan hubungan antara lingkaran gain, lingkaran NF, lingkaran VSWR, dan lingkaran mismatch factor (M). Dari hubungan tersebut diperoleh nilai impedansi masukan dan keluaran dari komponen aktif. Dalam tulisan ini, LNA dirancang dua tingkat untuk mendapatkan penguatan yang tinggi. Masing-masing tingkat menggunakan komponen aktif BJT BFP420 dengan penguatan dirancang sebesar 13,50 dB untuk tingkat pertama dan kedua, dan M sebesar 0,98. Sedangkan untuk saluran penyesuai impedansinya menggunakan substrat teflon fiberglass DiClad527. Hasil simulasi menunjukkan karakteristik LNA pada frekuensi 3 GHz yaitu gain sebesar 28,80 dB, NF sebesar 2,80 dB, VSWRin sebesar 1,05 dan VSWRout sebesar 1,1.

scholarly journals Realisasi LNA Dua Tingkat dengan Teknik Penyesuai Impedansi Trafo λ/4 dan Lumped Element untuk DVB-T2

2020 ◽  
Vol 8 (1) ◽  
pp. 1
Author(s):  
ASEP KARYANA ◽  
YUYUN SITI ROHMAH ◽  
BUDI PRASETYA
Keyword(s):  
Standing Wave ◽  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Voltage Standing Wave Ratio ◽  
Digital Video Broadcasting ◽  
Video Broadcasting ◽  
Lumped Element ◽  
Input And Output ◽  
Noise Amplifier

ABSTRAK Digital Video Broadcasting-Second Generation Terrestrial (DVB-T2) merupakan standar internasional yang menaungi pemberlakuan televisi digital saat ini. Pada konfigurasi DVB-T2 terdapat perangkat penerima sinyal di sisi pelanggan. Permasalahan yang sering dijumpai adalah lemahnya daya sinyal yang diterima. Oleh sebab itu, dibutuhkan penguat daya pada sistem penerima, yaitu Low Noise Amplifier (LNA) yang diletakkan setelah antena penerima. Pada penelitian ini, direalisasikan LNA menggunakan transistor BJT BFR96 dengan target desain dualstage, matching impedance Trafo λ/4 pada sisi input dan output, serta lumped element untuk penyepadanan impedansi antar tingkat. LNA direalisasikan untuk bekerja optimal pada frekuensi 630 MHz. Nilai Gain dan Noise Figure (NF) yang diperoleh berturut-turut, yaitu 12.96 dB dan 4.05 dB. Selain itu, nilai Voltage Standing Wave Ratio (VSWR) input dan output yang diperoleh berturut-turut sebesar 3.5674 dan 1.7718. Kata kunci: DVB-T2, LNA, Televisi, Gain, Noise Figure ABSTRACT Digital Video Broadcasting-Second Generation Terrestrial (DVB-T2) is the international standard that over shadows the current implementation of digital television. In the DVB-T2 configuration, there is a signal receiving device on the receiver side. The problem that is often encountered is the weak signal power received. Therefore, a power amplifier is needed in the receiving system, namely Low Noise Amplifier (LNA) which is placed after the receiving antenna. In this research, LNA was realized using a BJT BFR96 transistor with a dual-stage configuration design target, λ/4 impedance matching transformer on the input and output sides, and a lumped element for interstage matching impedances. LNA is realized to work optimally at frequency of 630 MHz. The Gain and Noise Figure (NF) values obtained were 12.96 dB and 4.05 dB, respectively. In addition, the input and output Voltage Standing Wave Ratio (VSWR) values obtained were 3.5674 and 1.7718, respectively. Keywords: DVB-T2, LNA, Television, Gain, Noise Figure

scholarly journals A wideband cryogenic microwave low-noise amplifier

2020 ◽  
Vol 11 ◽  
pp. 1484-1491
Author(s):  
Boris I Ivanov ◽  
Dmitri I Volkhin ◽  
Ilya L Novikov ◽  
Dmitri K Pitsun ◽  
Dmitri O Moskalev ◽  
...  
Keyword(s):  
Power Dissipation ◽  
Coplanar Waveguide ◽  
Noise Temperature ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
High Electron ◽  
Frequency Range ◽  
Noise Amplifier ◽  
On Chip

A broadband low-noise four-stage high-electron-mobility transistor amplifier was designed and characterized in a cryogen-free dilution refrigerator at the 3.8 K temperature stage. The obtained power dissipation of the amplifier is below 20 mW. In the frequency range from 6 to 12 GHz its gain exceeds 30 dB. The equivalent noise temperature of the amplifier is below 6 K for the presented frequency range. The amplifier is applicable for any type of cryogenic microwave measurements. As an example we demonstrate here the characterization of the superconducting X-mon qubit coupled to an on-chip coplanar waveguide resonator.

scholarly journals GaN low-noise X-band MMIC amplifier.

2021 ◽  
Vol 2021 (2) ◽  
Author(s):  
E. Kudabay ◽  
◽  
A. Salikh ◽  
V.A. Moseichuk ◽  
A. Krivtsun ◽  
...  
Keyword(s):  
Output Power ◽  
Integrated Circuit ◽  
Noise Figure ◽  
Supply Voltage ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
Common Source ◽  
High Electron ◽  
Monolithic Integrated Circuit ◽  
X Band

The purpose of this paper is to design a microwave monolithic integrated circuit (MMIC) for low noise amplifier (LNA) X-band (7-12 GHz) based on technology of gallium nitride (GaN) high electron mobility transistor (HEMT) with a T-gate, which has 100 nm width, on a silicon (Si) semi-insulating substrate of the OMMIC company. The amplifier is based on common-source transistors with series feedback, which was formed by high-impedance transmission line, and with parallel feedback to match noise figure and power gain. The key characteristics of an LNA are noise figure and gain. However, in this paper, it was decided to design the LNA, which should have a good margin in terms of input and output power. As a result, GaN technology was chosen, which has a higher noise figure compared to other technologies, but eliminates the need for an input power limiter, which in turn significantly increases the overall noise figure. As a result LNA MMIC was developed with the following characteristics: noise figure less than 1.6 dB, small-signal gain more than 20 dB, return loss better than -13 dB and output power more than 19 dBm with 1 dB compression in the range from 7 to 12 GHz in dimensions 2x1.5 mm², which has a supply voltage of 8 V and a current consumption of less than 70 mA. However, it should be said that LNA was only modeled in the AWR DE.

Full integrated process to manufacture RF-MEMS and MMICs on GaN/Si substrate

2010 ◽  
Vol 2 (3-4) ◽  
pp. 333-339 ◽  
Author(s):  
Flavia Crispoldi ◽  
Alessio Pantellini ◽  
Simone Lavanga ◽  
Antonio Nanni ◽  
Paolo Romanini ◽  
...  
Keyword(s):  
Insertion Loss ◽  
Rf Mems ◽  
Noise Figure ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
High Electron ◽  
Mems Devices ◽  
Frequency Range ◽  
Gan Hemt ◽  
Better Than

Radio Frequency Micro-Electro-Mechanical System (RF-MEMS) represents a feasible solution to obtain very low power dissipation and insertion loss, very high isolation and linearity switch with respect to “solid state” technologies. In this paper, we demonstrate the full integration of RF-MEMS switches in the GaN-HEMT (Gallium Nitride/High Electron Mobility Transistor) fabrication line to develop RF-MEMS devices and LNA-MMIC (Low Noise Amplifier/Monolithic Microwave Integrated Circuit) prototype simultaneously in the same GaN wafer. In particular, two different coplanar wave (CPW) LNAs and a series of discrete RF-MEMS in ohmic-series and capacitive-shunt configuration have been fabricated. RF-MEMS performances reveal an insertion loss and isolation better than 1 and 15 dB, respectively, in the frequency range 20–50 GHz in the case of pure capacitive shunt switches and in the frequency range 5–35 GHz for the ohmic-series switches. Moreover, the GaN HEMT device shows an Fmax of about 38 GHz and a power density of 6.5 W/mm, while for the best LNA-MMIC we have obtained gain better than 12 dB at 6–10 GHz with a noise figure of circa 4 dB, demonstrating the integration achievability.

scholarly journals A Summing Configuration based Low Noise Amplifier for MPI and MPS

2018 ◽  
Vol 4 (1) ◽  
pp. 83-86 ◽  
Author(s):  
Ankit Malhotra ◽  
Thorsten M. Buzug
Keyword(s):  
Magnetic Particle ◽  
Printed Circuit Board ◽  
Noise Figure ◽  
Imaging Modality ◽  
Superparamagnetic Iron Oxide ◽  
Input Voltage ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Circuit Board ◽  
Noise Amplifier

AbstractMagnetic particle imaging (MPI) is a novel tomographic imaging modality which uses static and dynamic magnetic fields to measure the magnetic response generated by superparamagnetic iron oxide nanoparticles (SPIONs). For the characterization of the SPIONs magnetic particle spectroscopy (MPS) is used. In the current research, a low noise amplifier (LNA) suitable for MPI and MPS is presented. LNA plays a significant role in the receive chain of MPI and MPS by amplifying the signals from the nanoparticles while keeping the noise induced through its own circuitry minimal. The LNA is based on the summing configuration and fabricated on a printed circuit board (PCB). Moreover, the prototyped LNA is compared with a commercially available pre-amplifier. The input voltage noise of the prototyped LNA with a receiving coil of series resistance of 0.551 mΩ and an inductance of 130 μH is 561 pV/√Hz with a noise figure (NF) of 11.57 dB.

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