scholarly journals Noise Characterization in InAlAs/InGaAs/InP pHEMTs for Low Noise Applications

2017 ◽  
Vol 7 (1) ◽  
pp. 176
Author(s):  
Z. A. Djennati ◽  
K. Ghaffour
Keyword(s):  
Noise Figure ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
Noise Model ◽  
Good Prediction ◽  
High Electron ◽  
Source Impedance ◽  
Noise Amplifier ◽  
Noise Characterization ◽  
Noise Models

In this paper, a noise revision of an InAlAs/InGaAs/InP psoeudomorphic high electron mobility transistor (pHEMT) in presented. The noise performances of the device were predicted over a range of frequencies from 1GHz to 100GHz. The minimum noise figure (NFmin), the noise resistance (Rn) and optimum source impedance (Zopt) were extracted using two approaches. A physical model that includes diffusion noise and G-R noise models and an analytical model based on an improved PRC noise model that considers the feedback capacitance Cgd. The two approaches presented matched results allowing a good prediction of the noise behaviour. The pHEMT was used to design a single stage S-band low noise amplifier (LNA). The LNA demonstrated a gain of 12.6dB with a return loss coefficient of 2.6dB at the input and greater than -7dB in the output and an overall noise figure less than 1dB.

Design and Simulation of S-Band Low Noise Amplifier Based on ATF-54143

2014 ◽  
Vol 577 ◽  
pp. 615-619
Author(s):  
Hai Peng Wang ◽  
Shu Hui Yang ◽  
Meng Lu Feng ◽  
Yin Chao Chen
Keyword(s):  
Standing Wave ◽  
Output Voltage ◽  
Noise Figure ◽  
High Electron Mobility Transistor ◽  
Input Voltage ◽  
Low Noise ◽  
Simulation Software ◽  
Voltage Standing Wave Ratio ◽  
High Electron ◽  
Noise Amplifier

This design used a low noise enhanced high electron mobility transistor ATF54143 and Agilent's ADS simulation software to achieve the good performance of operating frequency at 2.45GHz, noise figure (NF) is less than 0.8dB, band gain (S21) is greater than 15dB, input voltage standing-wave ratio (VSWR1) is less than 1.4dB, output voltage standing-wave ratio (VSWR2) is less than 1.6dB.

scholarly journals Design and Validation of 100 nm GaN-On-Si Ka-Band LNA Based on Custom Noise and Small Signal Models

Electronics ◽  
2020 ◽  
Vol 9 (1) ◽  
pp. 150 ◽  
Author(s):  
Lorenzo Pace ◽  
Sergio Colangeli ◽  
Walter Ciccognani ◽  
Patrick Ettore Longhi ◽  
Ernesto Limiti ◽  
...  
Keyword(s):  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Gate Length ◽  
Small Signal ◽  
Linear Measurements ◽  
Ka Band ◽  
Noise Amplifier ◽  
Gan On Si ◽  
Noise Models

In this paper a GaN-on-Si MMIC Low-Noise Amplifier (LNA) working in the Ka-band is shown. The chosen technology for the design is a 100 nm gate length HEMT provided by OMMIC foundry. Both small-signal and noise models had been previously extracted by the means of an extensive measurement campaign, and were then employed in the design of the presented LNA. The amplifier presents an average noise figure of 2.4 dB, a 30 dB average gain value, and input/output matching higher than 10 dB in the whole 34–37.5 Ghz design band, while non-linear measurements testify a minimum output 1 dB compression point of 23 dBm in the specific 35–36.5 GHz target band. This shows the suitability of the chosen technology for low-noise applications.

scholarly journals A wideband cryogenic microwave low-noise amplifier

2020 ◽  
Vol 11 ◽  
pp. 1484-1491
Author(s):  
Boris I Ivanov ◽  
Dmitri I Volkhin ◽  
Ilya L Novikov ◽  
Dmitri K Pitsun ◽  
Dmitri O Moskalev ◽  
...  
Keyword(s):  
Power Dissipation ◽  
Coplanar Waveguide ◽  
Noise Temperature ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
High Electron ◽  
Frequency Range ◽  
Noise Amplifier ◽  
On Chip

A broadband low-noise four-stage high-electron-mobility transistor amplifier was designed and characterized in a cryogen-free dilution refrigerator at the 3.8 K temperature stage. The obtained power dissipation of the amplifier is below 20 mW. In the frequency range from 6 to 12 GHz its gain exceeds 30 dB. The equivalent noise temperature of the amplifier is below 6 K for the presented frequency range. The amplifier is applicable for any type of cryogenic microwave measurements. As an example we demonstrate here the characterization of the superconducting X-mon qubit coupled to an on-chip coplanar waveguide resonator.

scholarly journals GaN low-noise X-band MMIC amplifier.

2021 ◽  
Vol 2021 (2) ◽  
Author(s):  
E. Kudabay ◽  
◽  
A. Salikh ◽  
V.A. Moseichuk ◽  
A. Krivtsun ◽  
...  
Keyword(s):  
Output Power ◽  
Integrated Circuit ◽  
Noise Figure ◽  
Supply Voltage ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
Common Source ◽  
High Electron ◽  
Monolithic Integrated Circuit ◽  
X Band

The purpose of this paper is to design a microwave monolithic integrated circuit (MMIC) for low noise amplifier (LNA) X-band (7-12 GHz) based on technology of gallium nitride (GaN) high electron mobility transistor (HEMT) with a T-gate, which has 100 nm width, on a silicon (Si) semi-insulating substrate of the OMMIC company. The amplifier is based on common-source transistors with series feedback, which was formed by high-impedance transmission line, and with parallel feedback to match noise figure and power gain. The key characteristics of an LNA are noise figure and gain. However, in this paper, it was decided to design the LNA, which should have a good margin in terms of input and output power. As a result, GaN technology was chosen, which has a higher noise figure compared to other technologies, but eliminates the need for an input power limiter, which in turn significantly increases the overall noise figure. As a result LNA MMIC was developed with the following characteristics: noise figure less than 1.6 dB, small-signal gain more than 20 dB, return loss better than -13 dB and output power more than 19 dBm with 1 dB compression in the range from 7 to 12 GHz in dimensions 2x1.5 mm², which has a supply voltage of 8 V and a current consumption of less than 70 mA. However, it should be said that LNA was only modeled in the AWR DE.

Full integrated process to manufacture RF-MEMS and MMICs on GaN/Si substrate

2010 ◽  
Vol 2 (3-4) ◽  
pp. 333-339 ◽  
Author(s):  
Flavia Crispoldi ◽  
Alessio Pantellini ◽  
Simone Lavanga ◽  
Antonio Nanni ◽  
Paolo Romanini ◽  
...  
Keyword(s):  
Insertion Loss ◽  
Rf Mems ◽  
Noise Figure ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
High Electron ◽  
Mems Devices ◽  
Frequency Range ◽  
Gan Hemt ◽  
Better Than

Radio Frequency Micro-Electro-Mechanical System (RF-MEMS) represents a feasible solution to obtain very low power dissipation and insertion loss, very high isolation and linearity switch with respect to “solid state” technologies. In this paper, we demonstrate the full integration of RF-MEMS switches in the GaN-HEMT (Gallium Nitride/High Electron Mobility Transistor) fabrication line to develop RF-MEMS devices and LNA-MMIC (Low Noise Amplifier/Monolithic Microwave Integrated Circuit) prototype simultaneously in the same GaN wafer. In particular, two different coplanar wave (CPW) LNAs and a series of discrete RF-MEMS in ohmic-series and capacitive-shunt configuration have been fabricated. RF-MEMS performances reveal an insertion loss and isolation better than 1 and 15 dB, respectively, in the frequency range 20–50 GHz in the case of pure capacitive shunt switches and in the frequency range 5–35 GHz for the ohmic-series switches. Moreover, the GaN HEMT device shows an Fmax of about 38 GHz and a power density of 6.5 W/mm, while for the best LNA-MMIC we have obtained gain better than 12 dB at 6–10 GHz with a noise figure of circa 4 dB, demonstrating the integration achievability.

Pareto optimization of radar receiver low-noise amplifier source impedance for low noise and high gain

2015 ◽  
Vol 8 (8) ◽  
pp. 1133-1139 ◽  
Author(s):  
Charles Baylis ◽  
Robert J. Marks ◽  
Lawrence Cohen
Keyword(s):  
Solution Method ◽  
Noise Figure ◽  
High Gain ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Design Engineers ◽  
Source Impedance ◽  
Noise Amplifier ◽  
Fundamental Solution Method ◽  
Maximum Available Gain

In radar receivers, the low noise amplifier(LNA)must provide very low noise figure and high gain to successfully receive very low signals reflected off of illuminated targets. Obtaining low noise figure and high gain, unfortunately, is a well-known trade-off that has been carefully negotiated by design engineers for years. This paper presents a fundamental solution method for the source reflection coefficient providing the maximum available gain under a given noise figure constraint, and also for the lowest possible noise figure under a gain constraint. The design approach is based solely on the small-signal S-parameters and noise parameters of the device; no additional measurements or information are required. This method is demonstrated through examples. The results are expected to find application in design of LNAs and in real-time reconfigurable amplifiers for microwave communication and radar receivers.

scholarly journals A Ku-Band GaAs Multifunction Transmitter and Receiver Chipset

Electronics ◽  
2020 ◽  
Vol 9 (8) ◽  
pp. 1327
Author(s):  
Hyunkyu Lee ◽  
Younghwan Kim ◽  
Iljin Lee ◽  
Dongkyo Kim ◽  
Kwangwon Park ◽  
...  
Keyword(s):  
Phase Shifter ◽  
Noise Figure ◽  
High Electron Mobility Transistor ◽  
Digital Circuit ◽  
Low Noise ◽  
High Electron ◽  
Chip Area ◽  
Digital Phase Shifter ◽  
Peak Gain ◽  
Ku Band

This paper presents a Ku-band monolithic multifunction transmitter and receiver chipset fabricated in 0.25-μm GaAs pseudomorphic high-electron mobility transistor technology. The chipset achieves a high level of integration, including a 4-bit 360° digital phase shifter, 5-bit 15.5-dB digital attenuator, amplifier and 9-bit digital serial-to-parallel converter for digital circuit control. Since the multifunction chipset includes a medium power amplifier and a low-noise amplifier, it features high P1dB and low noise figures over the full Ku-band frequencies. The multifunction transmitter shows a peak gain of 16.5 dB with output P1dB of 19.2 dBm at 15 GHz. The multifunction receiver shows a peak gain of 17.3 dB with noise figure of 2.5 dB at 15 GHz. The attenuation range is 15.5 dB with a step of 0.5 dB and the phase shift range is 360° with a step of 22.5°. Each chip area of the transmitter and receiver is 4.2 × 2.8 mm2.

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