Study of the Slurry in CMP 304 Ultra-Thin Stainless Steel Surface

2014 ◽  
Vol 1027 ◽  
pp. 235-239 ◽  
Author(s):  
Jia Peng Chen ◽  
Jian Guo Yao ◽  
Li Jie Ma ◽  
Su Fang Fu ◽  
Jian Xiu Su
Keyword(s):  
Stainless Steel ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Steel Surface ◽  
Removal Rate ◽  
Orthogonal Design ◽  
Stainless Steel Surface ◽  
Test Results ◽  
Flexible Display ◽  
Flexible Displays

Flexible displays will become the mainstream display of next generation, so the manufacturing technology of the flexible display substrate is one of very important technologies. In this paper, according to orthogonal design, the composition selection and optimization of chemical mechanical polishing (CMP) slurry based on alumina abrasive had been done in CMP ultra-thin stainless steel surface by a lot of tests. The CMP slurry based on alumina abrasive for ultra-thin stainless steel surface had been obtained. According to the test results, the material removal rate (MRR) is about 177 nm/min and the surface roughness (Ra) is about 0.018μm.

Design of CMP Slurry in CMP SiC Crystal Substrate (0001) Si Surface Based on Alumina (Al2O3) Abrasive

2013 ◽  
Vol 703 ◽  
pp. 90-93
Author(s):  
Jian Xiu Su ◽  
Zhu Qing Zhang ◽  
Xing Long Liu ◽  
Zhi Xiang Liu ◽  
Qi Gao Feng
Keyword(s):  
Surface Roughness ◽  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Orthogonal Design ◽  
Semiconductor Industry ◽  
Test Results ◽  
Optical Components ◽  
Crystal Substrate

SiC crystal substrate has been widely applied in the field of semiconductor industry and optical components recently,such as IC and semiconductor lighting. In this paper, according to orthogonal design, the composition selection and optimization of chemical mechanical polishing (CMP) slurry based on alumina (Al2O3) abrasive had been done in CMP SiC crystal substrate (0001) Si surface by a lot of tests. A CMP slurry based on alumina (Al2O3) abrasive for SiC crystal substrate (0001) Si surface had been obtained. According to the CMP test results, the material removal rate (MRR) is about 3 nm/min and the surface roughness Ra is about 0.198μm.

Study on Slurry of Chemical Mechanical Polishing 304 Stainless Steel Based on Ferric Chloride and Oxalic Acid

2016 ◽  
Vol 861 ◽  
pp. 102-107
Author(s):  
Jian Xiu Su ◽  
Jia Peng Chen ◽  
Qing Li ◽  
Hong Quan Qin
Keyword(s):  
Stainless Steel ◽  
Oxalic Acid ◽  
Ferric Chloride ◽  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
304 Stainless Steel ◽  
Flexible Display

Stainless steel will become one of the substrate materials used in flexible display. In this paper, the influence of the ferric chloride and the oxalic acid on the material removal rate (MRR) and surface roughness had been studied in the chemical mechanical polishing (CMP) 304 stainless steel. By analysis and research, the slurry ingredients based on the type of ferric chloride and oxalic acid had been obtained. The experimental results show that, the material removal rate reached more than 200nm/min. By the qualitative analysis on the phases of the surface material of 304 stainless steel using X-ray diffraction (XRD) after CMP, it is proved that the ferric chloride based slurry did not change the original phases and did not affect the performance of 304 stainless steel. The research results of this paper can provide the reference for the study the CMP slurry of 304 stainless steel.

scholarly journals Study on polishing slurry of hydrogen peroxide-oxalic acid in CMP 304 stainless steel

2020 ◽  
Vol 327 ◽  
pp. 02002
Author(s):  
Jianchun Weng ◽  
Rongchuan Lin ◽  
Xing Rong
Keyword(s):  
Hydrogen Peroxide ◽  
Stainless Steel ◽  
Oxalic Acid ◽  
Steel Surface ◽  
Removal Rate ◽  
Flexible Substrate ◽  
Reduction Reaction ◽  
304 Stainless Steel ◽  
Stainless Steel Surface ◽  
Flexible Display

Stainless steel will become the substrate material of the flexible display, requirements of the flexible substrate in the surface quality and performance are very strict. Chemical mechanical polishing (CMP) is one of the most appropriate technologies to achieve the surface processing of ultra-thin stainless-steel flexible display substrate with ultra-smooth and damage-free. In this paper, the design of CMP slurry of 304 stainless steel on the hydrogen peroxide-oxalic acid type was proposed. Through experiment and analysis, the basic ingredients of CMP slurry was obtained. The research results showed that the hydrogen peroxide can increase the hydrophilicity of the stainless steel surface, and the Fenton type Haber-Weiss reaction can occur on the surface of the fresh metal substrate of stainless steel. The trivalent iron ions generated by the Fenton type reaction combined with oxygen to generate iron oxide and promoted the removal of the surface material. Under acidic conditions, the oxalic acid can decrease the stability of the oxide film on the stainless steel surface, promote the diffusion of oxygen into the metal interface, improve the oxygen reduction reaction, and increase the material removal rate. The results will provide an important reference for the next researching the CMP slurry of 304 stainless steel.

Study on Slurry of SiC Crystal Substrate (0001) C Surface in CMP Based on Silica Sol (SiO2 Abrasive)

2014 ◽  
Vol 983 ◽  
pp. 214-217
Author(s):  
Zhu Qing Zhang ◽  
Hai Feng Cheng ◽  
Jian Xiu Su
Keyword(s):  
Surface Roughness ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Orthogonal Design ◽  
Substrate Material ◽  
Silica Sol ◽  
Single Crystal Substrate ◽  
Test Results ◽  
Crystal Substrate

SiC single crystal substrate has been become an indispensable substrate material in the field of semiconductor lighting. But, there is no report on the commercial slurry of chemical mechanical polishing (CMP) SiC substrate. In this paper, according to orthogonal design, the composition selection and optimization of CMP slurry based on silica sol (SiO2 abrasive) had been done in CMP SiC crystal substrate (0001) C surface by tests. The CMP slurry based on silica sol for SiC crystal substrate (0001) C surface had been obtained. According to the CMP test results, the material removal rate (MRR) is about 15nm/min and the surface roughness Ra is about 0.2nm.

Analysis on the Influence of Oxidant in CMP of Ultra-Thin Stainless Steel

2014 ◽  
Vol 1027 ◽  
pp. 167-170 ◽  
Author(s):  
Jian Xiu Su ◽  
Jia Peng Chen ◽  
Hai Feng Cheng ◽  
Song Zhan Fan
Keyword(s):  
Surface Roughness ◽  
Stainless Steel ◽  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
304 Stainless Steel ◽  
Research Results

In chemical mechanical polishing (CMP) of ultra-thin stainless steel, the oxidant of polishing slurry determines the material removal rate (MRR). In this paper, the influences of oxidant in slurry on MRR and surface roughness have been studied in CMP of ultra-thin 304 stainless steel based on alumina (Al2O3) abrasive. The research results show that, in the same conditions, the MRR increases with the increase of the oxidant C and the oxidant B, the MRR decreases with the increase of the oxidant A and the MRR is max with the oxidant C. It indicated that the oxidant C has a large effect on MRR in CMP of the 304 stainless steel. The research results can provide the reference for studying the slurry in CMP of ultra-thin stainless steel.

scholarly journals Analysis on the Action of Oxidant in Chemical Mechanical Polishing of 304 Ultra-Thin Stainless Steel

2017 ◽  
Vol 893 ◽  
pp. 234-239 ◽  
Author(s):  
Jian Xiu Su ◽  
Yan An Peng ◽  
Zhen Hui Liu ◽  
Zhan Kui Wang ◽  
Su Fang Fu
Keyword(s):  
Hydrogen Peroxide ◽  
Stainless Steel ◽  
Oxalic Acid ◽  
Chemical Mechanical Polishing ◽  
Removal Rate ◽  
Substrate Material ◽  
Mechanical Polishing ◽  
304 Stainless Steel ◽  
Flexible Display ◽  
Research Results

The ultra-thin stainless steel sheet will be used in flexible displays for substrate material. The application of the substrate requires its surface very smooth, no defects and damage free. Chemical mechanical polishing (CMP) has been considered as a practical and irreplaceable planarization technology in the ultra precision machining of the flexible display substrate. In chemical mechanical polishing of ultra-thin stainless steel, the oxidant of polishing slurry has an important influence on the material removal rate (MRR). In this paper, the influences of oxidant in slurry on MRR and surface roughness had been studied in CMP of ultra-thin 304 stainless steel based on alumina (Al2O3) abrasive. The research results show that the oxidant of the hydrogen peroxide and the oxalic acid have the interaction in CMP 304 stainless steel and when using the only one oxidant in polishing slurry, the hydrogen peroxide or oxalic acid, the MRR is less than the maximum. The oxalic acid can provide a strong acidic environment to ensure the stability of the hydrogen peroxide in polishing slurry and to improve the MRR in CMP 304 stainless steel. The research results can provide the reference for studying the slurry in CMP of ultra-thin stainless steel.

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