Analysis on the Influence of Oxidant in CMP of Ultra-Thin Stainless Steel

2014 ◽  
Vol 1027 ◽  
pp. 167-170 ◽  
Author(s):  
Jian Xiu Su ◽  
Jia Peng Chen ◽  
Hai Feng Cheng ◽  
Song Zhan Fan
Keyword(s):  
Surface Roughness ◽  
Stainless Steel ◽  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
304 Stainless Steel ◽  
Research Results

In chemical mechanical polishing (CMP) of ultra-thin stainless steel, the oxidant of polishing slurry determines the material removal rate (MRR). In this paper, the influences of oxidant in slurry on MRR and surface roughness have been studied in CMP of ultra-thin 304 stainless steel based on alumina (Al2O3) abrasive. The research results show that, in the same conditions, the MRR increases with the increase of the oxidant C and the oxidant B, the MRR decreases with the increase of the oxidant A and the MRR is max with the oxidant C. It indicated that the oxidant C has a large effect on MRR in CMP of the 304 stainless steel. The research results can provide the reference for studying the slurry in CMP of ultra-thin stainless steel.

Study on Slurry of Chemical Mechanical Polishing 304 Stainless Steel Based on Ferric Chloride and Oxalic Acid

2016 ◽  
Vol 861 ◽  
pp. 102-107
Author(s):  
Jian Xiu Su ◽  
Jia Peng Chen ◽  
Qing Li ◽  
Hong Quan Qin
Keyword(s):  
Stainless Steel ◽  
Oxalic Acid ◽  
Ferric Chloride ◽  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
304 Stainless Steel ◽  
Flexible Display

Stainless steel will become one of the substrate materials used in flexible display. In this paper, the influence of the ferric chloride and the oxalic acid on the material removal rate (MRR) and surface roughness had been studied in the chemical mechanical polishing (CMP) 304 stainless steel. By analysis and research, the slurry ingredients based on the type of ferric chloride and oxalic acid had been obtained. The experimental results show that, the material removal rate reached more than 200nm/min. By the qualitative analysis on the phases of the surface material of 304 stainless steel using X-ray diffraction (XRD) after CMP, it is proved that the ferric chloride based slurry did not change the original phases and did not affect the performance of 304 stainless steel. The research results of this paper can provide the reference for the study the CMP slurry of 304 stainless steel.

Principle and Experiment of Ultrasonic Subtle Atomization in CMP

2011 ◽  
Vol 279 ◽  
pp. 287-290 ◽  
Author(s):  
Xiao Peng Liu ◽  
Xiao Chun Chen ◽  
Qing Zhong Li
Keyword(s):  
Surface Roughness ◽  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Experimental System ◽  
Mechanical Polishing

The method of chemical mechanical polishing (CMP) using slurry which was ultrasonic subtle atomized was researched, and the system of Ultrasonic Subtle Atomization—Chemical Mechanical Polishing was established. The effects of polish parameters on polishing were also investigated. The results show that the experimental system can fully realize the expected function of polishing, the use of slurry is about one-tenth of the amount of traditional CMP, material removal rate can reach 113.734nm/min and the surface roughness is similar to the surface roughness in the traditional way.

scholarly journals Analysis on the Action of Oxidant in Chemical Mechanical Polishing of 304 Ultra-Thin Stainless Steel

2017 ◽  
Vol 893 ◽  
pp. 234-239 ◽  
Author(s):  
Jian Xiu Su ◽  
Yan An Peng ◽  
Zhen Hui Liu ◽  
Zhan Kui Wang ◽  
Su Fang Fu
Keyword(s):  
Hydrogen Peroxide ◽  
Stainless Steel ◽  
Oxalic Acid ◽  
Chemical Mechanical Polishing ◽  
Removal Rate ◽  
Substrate Material ◽  
Mechanical Polishing ◽  
304 Stainless Steel ◽  
Flexible Display ◽  
Research Results

The ultra-thin stainless steel sheet will be used in flexible displays for substrate material. The application of the substrate requires its surface very smooth, no defects and damage free. Chemical mechanical polishing (CMP) has been considered as a practical and irreplaceable planarization technology in the ultra precision machining of the flexible display substrate. In chemical mechanical polishing of ultra-thin stainless steel, the oxidant of polishing slurry has an important influence on the material removal rate (MRR). In this paper, the influences of oxidant in slurry on MRR and surface roughness had been studied in CMP of ultra-thin 304 stainless steel based on alumina (Al2O3) abrasive. The research results show that the oxidant of the hydrogen peroxide and the oxalic acid have the interaction in CMP 304 stainless steel and when using the only one oxidant in polishing slurry, the hydrogen peroxide or oxalic acid, the MRR is less than the maximum. The oxalic acid can provide a strong acidic environment to ensure the stability of the hydrogen peroxide in polishing slurry and to improve the MRR in CMP 304 stainless steel. The research results can provide the reference for studying the slurry in CMP of ultra-thin stainless steel.

Selection on Surfactant in Polishing Slurry for Chemical Mechanical Polishing 304 Stainless Steel

2020 ◽  
Vol 866 ◽  
pp. 125-134
Author(s):  
Jian Xiu Su ◽  
Yong Sheng Wang ◽  
Xiao Feng Zhang ◽  
Hai Xu Liu ◽  
Zhan Kui Wang
Keyword(s):  
Hydrogen Peroxide ◽  
Surface Roughness ◽  
Stainless Steel ◽  
Oxalic Acid ◽  
Ferric Chloride ◽  
Chemical Mechanical Polishing ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
304 Stainless Steel ◽  
Processing Technologies

Stainless steel will become one of the main substrate materials for flexible large-scale displays. As the substrate of the flexible displays, the biggest problem of stainless steel is that the surface roughness is too large. It is necessary to polish the surface of stainless steel with ultra-precision. Chemical mechanical polishing (CMP) technology will be one of the most practical processing technologies to make the surface of stainless steel ultra-smooth and damage-free. In this paper, the material removal rate (MRR) and surface roughness were studied based on the hydrogen peroxide oxidant and ferric chloride oxidant with different surfactants in chemical mechanical polishing (CMP) slurry by experiments. The results show that it can obtain the maximum of the MRR and the optimal surface quality when using 0.04 wt% sodium hexadecyl sulfate as the surfactant of the hydrogen peroxide-oxalic acid based polishing slurry and when using 0.2 wt% nonylphenol ethoxylate or 0.8 wt% OP-10 emulsifier as the surfactant of the of ferric chloride-oxalic acid based polishing slurry. The results of this study can provide a reference for further research on the chemical mechanical polishing of stainless steel.

Effect of SiC-Cu Electrode on Material Removal Rate, Tool Wear and Surface Roughness in EDM Process

2020 ◽  
Vol 38 (9A) ◽  
pp. 1406-1413
Author(s):  
Yousif Q. Laibia ◽  
Saad K. Shather
Keyword(s):  
Surface Roughness ◽  
Tool Wear ◽  
Material Removal Rate ◽  
Material Removal ◽  
Electrical Discharge Machining ◽  
Removal Rate ◽  
304 Stainless Steel ◽  
Tool Electrode ◽  
Pulse Time ◽  
Edm Process

Electrical discharge machining (EDM) is one of the most common non-traditional processes for the manufacture of high precision parts and complex shapes. The EDM process depends on the heat energy between the work material and the tool electrode. This study focused on the material removal rate (MRR), the surface roughness, and tool wear in a 304 stainless steel EDM. The composite electrode consisted of copper (Cu) and silicon carbide (SiC). The current effects imposed on the working material, as well as the pulses that change over time during the experiment. When the current used is (8, 5, 3, 2, 1.5) A, the pulse time used is (12, 25) μs and the size of the space used is (1) mm. Optimum surface roughness under a current of 1.5 A and the pulse time of 25 μs with a maximum MRR of 8 A and the pulse duration of 25 μs.

Effect of Process Parameters on Material Removal Rate in Chemical Mechanical Polishing of 6H-SiC(0001)

2008 ◽  
Vol 600-603 ◽  
pp. 831-834 ◽  
Author(s):  
Joon Ho An ◽  
Gi Sub Lee ◽  
Won Jae Lee ◽  
Byoung Chul Shin ◽  
Jung Doo Seo ◽  
...  
Keyword(s):  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Colloidal Silica ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Diamond Particles ◽  
Average Grain Size ◽  
Silica Slurry ◽  
Sic Wafer

2inch 6H-SiC (0001) wafers were sliced from the ingot grown by a conventional physical vapor transport (PVT) method using an abrasive multi-wire saw. While sliced SiC wafers lapped by a slurry with 1~9㎛ diamond particles had a mean height (Ra) value of 40nm, wafers after the final mechanical polishing using the slurry of 0.1㎛ diamond particles exhibited Ra of 4Å. In this study, we focused on investigation into the effect of the slurry type of chemical mechanical polishing (CMP) on the material removal rate of SiC materials and the change in surface roughness by adding abrasives and oxidizer to conventional KOH-based colloidal silica slurry. The nano-sized diamond slurry (average grain size of 25nm) added in KOH-based colloidal silica slurry resulted in a material removal rate (MRR) of 0.07mg/hr and the Ra of 1.811Å. The addition of oxidizer (NaOCl) in the nano-size diamond and KOH based colloidal silica slurry was proven to improve the CMP characteristics for SiC wafer, having a MRR of 0.3mg/hr and Ra of 1.087Å.

Sign in / Sign up

Export Citation Format

Share Document