Study on Slurry of SiC Crystal Substrate (0001) C Surface in CMP Based on Silica Sol (SiO2 Abrasive)

2014 ◽  
Vol 983 ◽  
pp. 214-217
Author(s):  
Zhu Qing Zhang ◽  
Hai Feng Cheng ◽  
Jian Xiu Su
Keyword(s):  
Surface Roughness ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Orthogonal Design ◽  
Substrate Material ◽  
Silica Sol ◽  
Single Crystal Substrate ◽  
Test Results ◽  
Crystal Substrate

SiC single crystal substrate has been become an indispensable substrate material in the field of semiconductor lighting. But, there is no report on the commercial slurry of chemical mechanical polishing (CMP) SiC substrate. In this paper, according to orthogonal design, the composition selection and optimization of CMP slurry based on silica sol (SiO2 abrasive) had been done in CMP SiC crystal substrate (0001) C surface by tests. The CMP slurry based on silica sol for SiC crystal substrate (0001) C surface had been obtained. According to the CMP test results, the material removal rate (MRR) is about 15nm/min and the surface roughness Ra is about 0.2nm.

Design of CMP Slurry in CMP SiC Crystal Substrate (0001) Si Surface Based on Alumina (Al2O3) Abrasive

2013 ◽  
Vol 703 ◽  
pp. 90-93
Author(s):  
Jian Xiu Su ◽  
Zhu Qing Zhang ◽  
Xing Long Liu ◽  
Zhi Xiang Liu ◽  
Qi Gao Feng
Keyword(s):  
Surface Roughness ◽  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Orthogonal Design ◽  
Semiconductor Industry ◽  
Test Results ◽  
Optical Components ◽  
Crystal Substrate

SiC crystal substrate has been widely applied in the field of semiconductor industry and optical components recently,such as IC and semiconductor lighting. In this paper, according to orthogonal design, the composition selection and optimization of chemical mechanical polishing (CMP) slurry based on alumina (Al2O3) abrasive had been done in CMP SiC crystal substrate (0001) Si surface by a lot of tests. A CMP slurry based on alumina (Al2O3) abrasive for SiC crystal substrate (0001) Si surface had been obtained. According to the CMP test results, the material removal rate (MRR) is about 3 nm/min and the surface roughness Ra is about 0.198μm.

Study on Chemical Mechanical Polishing Parameters of 6H-SiC Crystal Substrate Based on Diamond Abrasive

2013 ◽  
Vol 797 ◽  
pp. 261-265 ◽  
Author(s):  
Jian Xiu Su ◽  
Zhu Qing Zhang ◽  
Jian Guo Yao ◽  
Li Jie Ma ◽  
Qi Gao Feng
Keyword(s):  
Surface Roughness ◽  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Rotational Velocity ◽  
Crystal Substrate ◽  
Polishing Pressure ◽  
Diamond Abrasive ◽  
Abrasive Size

In this paper, according to the slurry ingredients obtained by former research, the influences of the chemical mechanical polishing (CMP) process parameters, such as the rotational velocity of the platen and the carrier, the polishing pressure and the abrasive size on the material removal rate (MRR) and surface roughness Ra have been studied in CMP SiC crystal substrate (0001) C and (0001) Si surface based on the diamond abrasive. The research results show that the material removal rate changes with the change of the abrasive size, the rotational velocity of the platen and the polishing pressure significantly, but the maximum of MRR can be obtained at a certain rotational velocity of platen, abrasive size and polishing pressure. The influence of the abrasive size, the platen velocity, the carrier velocity and the polishing pressure on surface roughness is no significant. Under the same conditions, the MRR of CMP the Si surface is larger than that of the C surface. This study results will provide the reference for optimizing the process parameters and researching the material removal mechanism in CMP SiC crystal substrate.

Study of the Slurry in CMP 304 Ultra-Thin Stainless Steel Surface

2014 ◽  
Vol 1027 ◽  
pp. 235-239 ◽  
Author(s):  
Jia Peng Chen ◽  
Jian Guo Yao ◽  
Li Jie Ma ◽  
Su Fang Fu ◽  
Jian Xiu Su
Keyword(s):  
Stainless Steel ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Steel Surface ◽  
Removal Rate ◽  
Orthogonal Design ◽  
Stainless Steel Surface ◽  
Test Results ◽  
Flexible Display ◽  
Flexible Displays

Flexible displays will become the mainstream display of next generation, so the manufacturing technology of the flexible display substrate is one of very important technologies. In this paper, according to orthogonal design, the composition selection and optimization of chemical mechanical polishing (CMP) slurry based on alumina abrasive had been done in CMP ultra-thin stainless steel surface by a lot of tests. The CMP slurry based on alumina abrasive for ultra-thin stainless steel surface had been obtained. According to the test results, the material removal rate (MRR) is about 177 nm/min and the surface roughness (Ra) is about 0.018μm.

scholarly journals Study on the Influence of Sapphire Crystal Orientation on Its Chemical Mechanical Polishing

2020 ◽  
Vol 10 (22) ◽  
pp. 8065
Author(s):  
Linlin Cao ◽  
Xiang Zhang ◽  
Julong Yuan ◽  
Luguang Guo ◽  
Teng Hong ◽  
...  
Keyword(s):  
Material Removal Rate ◽  
Material Properties ◽  
Chemical Mechanical Polishing ◽  
Crystal Orientation ◽  
Material Removal ◽  
Removal Rate ◽  
Substrate Material ◽  
Mechanical Polishing ◽  
Sapphire Crystal ◽  
Research Objects

Sapphire has been the most widely used substrate material in LEDs, and the demand for non-C-planes crystal is increasing. In this paper, four crystal planes of the A-, C-, M- and R-plane were selected as the research objects. Nanoindentation technology and chemical mechanical polishing technology were used to study the effect of anisotropy on material properties and processing results. The consequence showed that the C-plane was the easiest crystal plane to process with the material removal rate of 5.93 nm/min, while the R-plane was the most difficult with the material removal rate of 2.47 nm/min. Moreover, the research results have great guiding significance for the processing of sapphire with different crystal orientations.

Analysis of Chemical Action of Oxidants in Chemical Mechanical Polishing of SiC Crystal Substrate

2014 ◽  
Vol 1027 ◽  
pp. 213-216
Author(s):  
Su Fang Fu ◽  
Jian Guo Yao ◽  
Li Jie Ma ◽  
Jian Xiu Su
Keyword(s):  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Key Factors ◽  
Chemical Action ◽  
Crystal Substrate ◽  
The Stability ◽  
Polishing Efficiency

Chemical mechanical polishing (CMP) had been considered as the most practical and effective method of achieving an ultra-smooth and non-damage surface in manufacturing SiC crystal substrate. CMP slurry was one of the key factors of CMP technology. In this paper, through investigating the changes of several core factors to evaluate the performance of CMP, such as the material removal rate (MRR), surface roughness Ra, 3D surface profiler, etc., the influence of various slurry and its content on the polishing efficiency and surface finish quality had been studied. The research results showed that different oxidant had different chemical action mechanism, also affecting the stability of CMP slurry and surface quality of specimen; adding suitable an oxidant to slurry could effectively improve the CMP performance.

Analysis on the Influence of Oxidant in CMP of Ultra-Thin Stainless Steel

2014 ◽  
Vol 1027 ◽  
pp. 167-170 ◽  
Author(s):  
Jian Xiu Su ◽  
Jia Peng Chen ◽  
Hai Feng Cheng ◽  
Song Zhan Fan
Keyword(s):  
Surface Roughness ◽  
Stainless Steel ◽  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
304 Stainless Steel ◽  
Research Results

In chemical mechanical polishing (CMP) of ultra-thin stainless steel, the oxidant of polishing slurry determines the material removal rate (MRR). In this paper, the influences of oxidant in slurry on MRR and surface roughness have been studied in CMP of ultra-thin 304 stainless steel based on alumina (Al2O3) abrasive. The research results show that, in the same conditions, the MRR increases with the increase of the oxidant C and the oxidant B, the MRR decreases with the increase of the oxidant A and the MRR is max with the oxidant C. It indicated that the oxidant C has a large effect on MRR in CMP of the 304 stainless steel. The research results can provide the reference for studying the slurry in CMP of ultra-thin stainless steel.

Principle and Experiment of Ultrasonic Subtle Atomization in CMP

2011 ◽  
Vol 279 ◽  
pp. 287-290 ◽  
Author(s):  
Xiao Peng Liu ◽  
Xiao Chun Chen ◽  
Qing Zhong Li
Keyword(s):  
Surface Roughness ◽  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Experimental System ◽  
Mechanical Polishing

The method of chemical mechanical polishing (CMP) using slurry which was ultrasonic subtle atomized was researched, and the system of Ultrasonic Subtle Atomization—Chemical Mechanical Polishing was established. The effects of polish parameters on polishing were also investigated. The results show that the experimental system can fully realize the expected function of polishing, the use of slurry is about one-tenth of the amount of traditional CMP, material removal rate can reach 113.734nm/min and the surface roughness is similar to the surface roughness in the traditional way.

Study on 6H-SiC Crystal Substrate (0001) C Surface in FA-CMP Based on Diamond Particle

2015 ◽  
Vol 727-728 ◽  
pp. 244-247
Author(s):  
Zhu Qing Zhang ◽  
Kang Lin Xing
Keyword(s):  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Diamond Particle ◽  
Mechanical Polishing ◽  
Crystal Substrate ◽  
Fixed Abrasive ◽  
Free Abrasive

Through experimental study on the role of the free abrasive in chemical mechanical polishing, in this paper, four different types of abrasive which were chosen were used for the research of material removal rate(MRR) and surface quality of SiC single crystal . Finally ,Diamond abrasive which is considered was the most suitable for chemical mechanical polishing(CMP) abrasive of SiC Crystal Substrate. With diamond Particle polish pad polishing, it is draw a comparison result on the influence of the free abrasive and consolidation abrasive for the material removal rate and surface quality of 6H-SiC. The results showed that: the MRR is 140nm / min, the material removal rate if fixed abrasive chemical mechanical polishing(FA-CMP) more than three times that of traditional CMP, fixed abrasive chemical mechanical polishing pad, are involved in a large proportion of micro abrasive cutting, can greatly improve the material removal efficiency. And results from the test procedure, the FA-CMP surface has scratches after more technical problems for the polishing pad, the surface damage is relatively free of abrasive chemical mechanical polishing is more serious.

scholarly journals Optimal design and experimental study of fixed abrasive pads based on coupling of damping regulation and pellet arrangement

2021 ◽  
Vol 12 (1) ◽  
pp. 97-108
Author(s):  
Chaoqun Xu ◽  
Congfu Fang ◽  
Yuan Li ◽  
Chong Liu
Keyword(s):  
Surface Roughness ◽  
Pressure Distribution ◽  
Material Removal Rate ◽  
Material Removal ◽  
Removal Rate ◽  
Wafer Surface ◽  
Test Results ◽  
Workpiece Material ◽  
Fixed Abrasive

Abstract. Lapping and polishing technology is an efficient processing method for wafer planarization processing. The structure of the fixed abrasive pad (FAP) is one of the most concerning issues in the research. The FAP structure affects the pressure distribution on the wafer surface, and the pressure distribution during processing has a significant influence on the wafer surface. Therefore, in this paper, a better pressure distribution is obtained by adjusting the angle of the spiral arrangement and the damping distribution of the damping layer of the FAP, thereby obtaining better processing quality. Based on the above theory, a new type of FAP, with coupling between the arrangement of the pellets and the damping regulation of the damping layer, was designed and optimized. The machining effects of different FAPs on the workpiece surface are compared in terms of material removal rate, material removal thickness, and surface roughness. The test results show that the workpiece material removal rate is higher than that of the traditional FAP when using the optimized FAP. The non-uniformity of the optimized FAP for that of material removal was 4.034 µm, which was lower than the traditional FAPs by 24.4 % and 17.6 %, respectively. The average surface roughness, Ra, of the optimized FAP is 0.21 µm, which is lower than 19.1 % and 12.5 % of the two traditional FAPs, respectively. Therefore, workpiece material removal and distribution are more uniform, and the surface quality of the workpiece is better when the optimized FAP processing is used. The test results prove that the optimized pellet arrangement and damping can achieve a better surface quality of the workpiece, which can meet the precision lapping process requirements for high-quality surfaces and large-scale production of brittle and hard materials such as sapphire.

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