Synthesis and Preparation of Eu(BA)3Phen and its Fluorescent Falsification-Resistant Screen Printing Ink

2015 ◽  
Vol 1096 ◽  
pp. 336-339
Author(s):  
Jie Meng

Europium complex Eu (BA)3Phen was synthesised by selecting the fine Benzoyl acetone (BA) as the first ligand, o-phenanthroline (Phen) as the second ligand . IR spectrum indicated that europium ion has bonded with the ligands. The fluorescent properties and UV spectrum were studied. And fluorescent falsification-resistant screen printing ink was prepared , the fluorescent ink showed the characteristic emission of Eu3+, showed invisible in the visible light and showed obvious fluorescence under ultraviolet light.

2010 ◽  
Vol 174 ◽  
pp. 393-396 ◽  
Author(s):  
Wen Cai Xu ◽  
Yin Yang ◽  
Jia Yue Sun

The ultraviolet (UV) fluorescent anti-counterfeiting offset printing ink, which can emit visible light (400-800 nm) under the excitation of ultraviolet light (200-400 nm), has been extensively adopted in the modern printing technology. In this paper, we used the red-emitting phosphor BaCaBO3F: Eu3+, Li+ as the fluorescent pigment for printing ink and investigated the influence on additive amount of the luminescence properties of fluorescent ink in order to determine a more ideal ratio of fluorescent ink .Besides, the shear viscosity, thixotropy, visco-elasticity and the temperature dependence of viscosity according to the rheology theory and rheological technique were also studied, and finally the valuable parameters and patterns were successfully obtained.


2010 ◽  
Vol 174 ◽  
pp. 437-440
Author(s):  
Jie Meng ◽  
Cheng Sun ◽  
Jian Qing Wang ◽  
Wen Shun Sun ◽  
Xiao Xiu Hao ◽  
...  

Fluorescence falsification-resistant ink is one of the most widely used ink in packaging and printing industry. In this paper, europium complexes were synthesized by doping no-fluorescence inert ions Gd3+. IR spectra indicated that these complexes have similar structures, have bonded with the legends. The fluorescence properties indicated that the doping ions Gd3+ can enhance the fluorescence intensities, the best mole ratio of Gd3+ to Eu3+ is 1:9;At last, fluorescence falsification-resistant ink was prepared, the fluorescence ink showed the characteristic emission of Eu3+ , showed invisible in visible light and showed red fluorescence under ultraviolet light.


2011 ◽  
Vol 380 ◽  
pp. 103-106
Author(s):  
Xao Xiu Hao ◽  
Jie Meng ◽  
Cheng Sun

Synthesis and fluorescent properties of rare earth Rare earth complexes ultraviolet photochromic materials such as ternary and quaternary europium complexes were synthesized in this,we selected the high luminescent β-diketones such as α-thenoyltrifluoroacetone(HTTA),fine fragrant carboxylic acid and o-phenanthroline as ligands. The structure of the ternary and quaternary europium complexes were studied by IR spectrum, indicated that these complexes have bonded with the ligands. The fluorescent properties were studied systematically by fluorescence spectrophotometer, relative fluorescence intensity of the ternary and quaternary europium complexes were quantitative determinated ,these europium complexes showed invisible in the visible light and showed obvious red fluorescence under ultraviolet light. This study of the rare earth europium photochromic materials have theoretical and practical application guidance to security printing ink and packing. Experiment shows, The fluorescence properties of Eu(BA)3Phen and Eu(BA)(TTA)2Phen indicated that two excitation spectrum are banded spectrum, the energy which the ligands have absorbed transmitted effectively to europium ion. The fluorescence emission bands of Eu(BA)3Phen and Eu(BA)(TTA)2Phen are similar, but the relative fluorescence intensity of 5D0→7F2 of Eu(BA)(TTA)2Phen is far bigger than Eu(BA)3Phen. The two complexes have the low symmetry, have the good monochromaticity.


2004 ◽  
Vol 43 (38) ◽  
pp. 5010-5013 ◽  
Author(s):  
Chi Yang ◽  
Li-Min Fu ◽  
Yuan Wang ◽  
Jian-Ping Zhang ◽  
Wing-Tak Wong ◽  
...  

2021 ◽  
Author(s):  
Shijia Jiang ◽  
Yanxin Liu ◽  
Jun Xu

Photocatalytic water splitting is a potential solution for global energy crisis. However, most photocatalysts only respond to ultraviolet light irradiation, which is not the main component of sunlight. The photocatalysis...


2021 ◽  
Vol 9 (39) ◽  
pp. 22522-22532
Author(s):  
Ren-Jie Wu ◽  
Yueh-Ling Hsu ◽  
Wei-Yang Chou ◽  
Horng-Long Cheng

A photoexcited merocyanine molecule triggers several distinct photoresponse features of organic phototransistors, enabling distinction between ultraviolet light and visible light and realising an energy-saving optical synapse.


2018 ◽  
Vol 47 (37) ◽  
pp. 12852-12857 ◽  
Author(s):  
Hua Ma ◽  
Xin Wang ◽  
Bo Song ◽  
Liu Wang ◽  
Zhixin Tang ◽  
...  

A visible-light-excitable Eu3+ complex-based luminescent probe for the time-gated luminescence detection of singlet oxygen in vitro and in vivo.


2009 ◽  
Vol 6 (1) ◽  
pp. 6-12 ◽  
Author(s):  
Arne Albertsen ◽  
Koji Koiwai ◽  
Kyoji Kobayashi ◽  
Tomonori Oguchi ◽  
Katsumi Aruga

This paper highlights the possible combination of technologies such as thick film screen printing, ink jet, and post-firing thin film processes in conjunction with laser-drilled fine vias to produce high-density, miniaturized LTCC substrates. To obtain the silver pattern on the inner layers, both conventional thick film printing and ink jet printing (using nano silver particle dispersed ink) were applied on the ceramic green sheets. The ink jet process made it possible to metallize fine lines with line/space = 30/30 μm. For interlayer connections, fine vias of 30 μm in diameter formed by UV laser were used. Then these sheets were stacked on top of each other and fired to obtain a base substrate. On this base substrate, fine copper patterns for flip chip mounting were formed by a thin film process. The surface finish consisted of a nickel passivation and a gold layer deposited by electroless plating. The combination of the three patterning processes for conducting traces and UV laser drilling of fine vias make it appear possible to realize fine pitch LTCC, for example, for flip chip device mounting.


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