The Optical and Electrical Properties of Al and (Al, Cu) Doped ZnO Film

The optical and electric transport properties of the Al:ZnO(AZO) and (Cu, Al):ZnO (CAZO) films deposited by pulsed laser deposition (PLD) were investigated in this paper. The experiment found the optical band gap (OBG) of AZO films at room temperature increased from 3.378eV of ZnO to 3.446eV of ZnO:Al (2min) sample, but decreased as continue add Al to ZnO:Al (4min), which were attributes to the Burstein-Moss (B-M) effect. For CAZO films, there is obvious change about hall mobility,ν, and resistivity,ρ, after doped Cu. It can be found that theνdecreased from to and theρincreased from to for AZO and CAZO, respectively, which is due to the scattering increasing between donor carriers and grain boundary as Cu2+ions increase, meanwhile, it was also found the decrease of OBG, which are very help to further understand the electric transport properties and the OBG effect of AZO-based films as well as its devices potential application.

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Control the crystal growth of Al-doped ZnO thin film prepared by pulsed laser deposition and the influences on its optical and electrical properties

Journal of Physics Conference Series ◽

10.1088/1742-6596/901/1/012163 ◽

2017 ◽

Vol 901 ◽

pp. 012163 ◽

Cited By ~ 1

Author(s):

N. Khemasiri ◽

S. Jessadaluk ◽

N. Kayunkid ◽

S. Rahong ◽

A. Rangkasikorn ◽

...

Keyword(s):

Thin Film ◽

Crystal Growth ◽

Electrical Properties ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Optical And Electrical Properties ◽

Zno Thin Film ◽

Doped Zno

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Pulsed laser deposition of Ga doped ZnO films - Influence of deposition temperature and laser pulse frequency on structural, optical and electrical properties

Vacuum ◽

10.1016/j.vacuum.2018.10.031 ◽

2019 ◽

Vol 159 ◽

pp. 134-140 ◽

Cited By ~ 7

Author(s):

Jaroslav Bruncko ◽

Pavol Šutta ◽

Marie Netrvalová ◽

Miroslav Michalka ◽

Andrej Vincze

Keyword(s):

Electrical Properties ◽

Laser Pulse ◽

Pulsed Laser Deposition ◽

Deposition Temperature ◽

Pulsed Laser ◽

Pulse Frequency ◽

Laser Deposition ◽

Zno Films ◽

Optical And Electrical Properties ◽

Doped Zno

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Crystal Polarity and Electrical Properties of Heavily Doped ZnO Films

MRS Proceedings ◽

10.1557/opl.2012.1579 ◽

2012 ◽

Vol 1494 ◽

pp. 133-138 ◽

Cited By ~ 3

Author(s):

Yutaka Adachi ◽

Naoki Ohashi ◽

Isao Sakaguchi ◽

Hajime Haneda

Keyword(s):

Growth Rate ◽

Electrical Properties ◽

Buffer Layer ◽

Pulsed Laser ◽

Laser Deposition ◽

Zno Films ◽

Zno Film ◽

Al Content ◽

Heavily Doped ◽

Doped Zno

ABSTRACTIn this study, ZnO f ilms heavily doped with Al or Ga were grown on a polarity-controlled buffer layer using pulsed laser deposition. The films prepared using a 1 mol% Al-doped target with the buffer layer grown at 700 °C had the c(+)-face, whereas the films with the buffer layer grown at 400 °C had the c(-)-face, which means that the polarity control can be successfully carried out using the buffer layer. However, the films prepared using targets doped with more than 1 mol% Al or Ga had the c(+)-face regardless of the polarity of the buffer layer. The 1 mol% Al-doped ZnO film with the c(+)-face had lower electron concentration and higher growth rate than the film with the c(-)-face. This result indicates that the Al content in the film with the c(-)-face was larger than that in the film with the c(+)-face.

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