Optimization of Slicing Parameters of Single Crystal Silicon Sliced by Diamond Wire Saw

2012 ◽  
Vol 500 ◽  
pp. 89-93 ◽  
Author(s):  
J.F. Meng ◽  
Y.P. Han
Keyword(s):  
Single Crystal ◽  
Random Vibration ◽  
Single Crystal Silicon ◽  
Machine Precision ◽  
Crystal Silicon ◽  
Diamond Wire ◽  
Feed Force ◽  
Wire Saw ◽  
Diamond Wire Saw ◽  
Moving Speed

The slicing technology of hard-brittle materials by endless diamond wire saw has the advantages of higher moving speed of wire saw, better slicing quality, and thin kerf. According to the strength of wire saw, the cutting force and the random vibration of wire saw, the slicing parameters are optimized. As single crystal silicon is sliced, the constant feed force is less than 10N, the maximum pretension is 30N, and the highest moving speed of wire saw is 24m/s. But because the restrict of machine precision, the highest slicing speed is 16m/s.

Experimental Investigation on Brittle-Ductile Transition in Electroplated Diamond Wire Saw Machining Single Crystal Silicon

2010 ◽  
Vol 431-432 ◽  
pp. 265-268 ◽  
Author(s):  
Yu Fei Gao ◽  
Pei Qi Ge
Keyword(s):  
Single Crystal ◽  
Material Removal ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Diamond Wire ◽  
Brittle Ductile Transition ◽  
Wire Saw ◽  
Diamond Wire Saw ◽  
R Value ◽  
Material Removal Mode

Based on reciprocating electroplated diamond wire saw (REDWS) slicing experiments, a study on REDWS machining brittle-ductile transition of single crystal silicon was introduced. The machined surfaces and chips were observed by using Scanning Electron Microscope (SEM), and some experimental evidences of the change of material removal mode had been obtained. The experimental results indicate there is a close relationship between material removal mode and the ratio r value of ingot feed speed and wire speed, through controlling and adjusting the r value, the material removal mode can be complete brittle, partial ductile and near-ductile removal.

scholarly journals Recycling of the Diamond-wire Saw Powder by Ni-catalyzed Nitridation to Prepare Si3N4

2021 ◽  
Author(s):  
Hongli Xu ◽  
Xing Jin ◽  
Xuetong Zhou ◽  
Xinghong Du ◽  
Pengfei Xing ◽  
...  
Keyword(s):  
Single Crystal Silicon ◽  
Silica Film ◽  
Crystal Silicon ◽  
Diamond Wire ◽  
Wire Saw ◽  
Diamond Wire Saw ◽  
Different Temperatures ◽  
Direct Nitridation ◽  
Lower Temperature ◽  
Nitridation Temperature

Abstract In this paper, the acceleration of nickel (Ni) in the direct nitridation process of the diamond-wire saw powder (DWSP) was investigated. The DWSP doped with Ni additives were nitrided at different temperatures. To study the mechanism of accelerated nitridation, the thermodynamics of Si-O-N-Ni was analyzed by FactSage 7.2 and single-crystal silicon blocks were also nitrided instead of the DWSP. The results revealed that Ni decreased the nitridation temperature at which the DWSP began to gain significant weight and exhibited an excellent accelerating effect on the nitridation of the DWSP. At 1300℃, the DWSP containing 2.0 wt.% Ni additives had been completely nitrided within 2 h, whereas the DWSP without Ni additives had not been nitrided yet. Based on the equivalent substitution experiment, it could be conducted that the presence of Ni additives accelerated the nitridation and promoted the formation of the α-Si3N4 nanorods through facilitating the generation of the SiO(g) and destructing the silica film on the surface of silicon at lower temperature. Meanwhile, Ni additives also played an important part in the growth of α-Si3N4 nanorods by forming liquid Ni-Si alloy in the product.

Analysis of Grit Cut Depth in Fixed-Abrasive Diamond Wire Saw Slicing Single Crystal Silicon

2011 ◽  
Vol 175 ◽  
pp. 72-76 ◽  
Author(s):  
Yu Fei Gao ◽  
Pei Qi Ge
Keyword(s):  
Single Crystal ◽  
Process Parameters ◽  
Silicon Crystal ◽  
Single Crystal Silicon ◽  
Feed Speed ◽  
Crystal Silicon ◽  
Wire Saw ◽  
Diamond Wire Saw ◽  
Cut Depth ◽  
Fixed Abrasive

A mathematical model to calculate the grit average cut depth in wire sawing single crystal silicon was founded. So the grit average cut depths were calculated theoretically by choosing different process parameters, and influences of process parameters on grit cut depths of slicing silicon crystal were analyzed. Analysis results indicate that the grit average cut depth relates to the silicon mechanical properties, grit shape and size, wire speed and ingot feed speed, etc. And there is a monotone increasing non-linear correlation between grit average cut depth and the ratio i value of ingot feed speed and wire speed, when the i value is lower, the average grit cut depth is lower.

Investigation of Subsurface Damage Depth of Single Crystal Silicon in Electroplated Wire Saw Slicing

2009 ◽  
Vol 416 ◽  
pp. 306-310 ◽  
Author(s):  
Yu Fei Gao ◽  
Pei Qi Ge ◽  
Shao Jie Li
Keyword(s):  
Theoretical Model ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Subsurface Damage ◽  
Feed Speed ◽  
Crystal Silicon ◽  
Speed Increase ◽  
Technical Parameters ◽  
Wire Saw ◽  
Diamond Wire Saw

Based on reciprocating electroplated diamond wire saw slicing single crystal silicon experiments, a bonded interface sectioning technique was used to measure the silicon subsurface damage (SSD) depth, and the influences of wire saw speed and feed speed on silicon SSD were studied. Moreover, based on the indentation fracture mechanics (IFM) theory, a theoretical model of relationship between SSD and surface roughness (SR) was established for predicting the SSD depth by measuring the SR. The results indicate that SSD depth decreases with the wire saw speed increase and feed speed decrease, within the range of experimental technical parameters. There exists monotone increasing non-linear correlation between SSD depth and SR (Rz) in wire saw slicing single crystal silicon, that is, SSD－SR+χSR3/4. And the experimental measure values coincide with the theoretical prediction values comparatively, therefore, the theoretical model can be used for predicting SSD depth rapidly, expediently and accurately.

Influence of diamond wire saw slicing parameters on (010) lattice plane beta-gallium oxide single crystal wafer

2021 ◽  
Vol 133 ◽  
pp. 105939
Author(s):  
Pengcheng Gao ◽  
Baimei Tan ◽  
Fan Yang ◽  
Hui Li ◽  
Na Bian ◽  
...  
Keyword(s):  
Single Crystal ◽  
Gallium Oxide ◽  
Lattice Plane ◽  
Diamond Wire ◽  
Wire Saw ◽  
Diamond Wire Saw ◽  
Crystal Wafer

scholarly journals The Influence of Wire Speed on Phase Transitions and Residual Stress in Single Crystal Silicon Wafers Sawn by Resin Bonded Diamond Wire Saw

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 429
Author(s):  
Tengyun Liu ◽  
Peiqi Ge ◽  
Wenbo Bi
Keyword(s):  
Residual Stress ◽  
Surface Layer ◽  
Phase Transitions ◽  
Single Crystal ◽  
Amorphous Silicon ◽  
Silicon Wafer ◽  
Single Crystal Silicon ◽  
Silicon Wafers ◽  
Crystal Silicon ◽  
Diamond Wire

Lower warp is required for the single crystal silicon wafers sawn by a fixed diamond wire saw with the thinness of a silicon wafer. The residual stress in the surface layer of the silicon wafer is the primary reason for warp, which is generated by the phase transitions, elastic-plastic deformation, and non-uniform distribution of thermal energy during wire sawing. In this paper, an experiment of multi-wire sawing single crystal silicon is carried out, and the Raman spectra technique is used to detect the phase transitions and residual stress in the surface layer of the silicon wafers. Three different wire speeds are used to study the effect of wire speed on phase transition and residual stress of the silicon wafers. The experimental results indicate that amorphous silicon is generated during resin bonded diamond wire sawing, of which the Raman peaks are at 178.9 cm−1 and 468.5 cm−1. The ratio of the amorphous silicon surface area and the surface area of a single crystal silicon, and the depth of amorphous silicon layer increases with the increasing of wire speed. This indicates that more amorphous silicon is generated. There is both compressive stress and tensile stress on the surface layer of the silicon wafer. The residual tensile stress is between 0 and 200 MPa, and the compressive stress is between 0 and 300 MPa for the experimental results of this paper. Moreover, the residual stress increases with the increase of wire speed, indicating more amorphous silicon generated as well.

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