Experimental Investigation on Brittle-Ductile Transition in Electroplated Diamond Wire Saw Machining Single Crystal Silicon

2010 ◽  
Vol 431-432 ◽  
pp. 265-268 ◽  
Author(s):  
Yu Fei Gao ◽  
Pei Qi Ge
Keyword(s):  
Single Crystal ◽  
Material Removal ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Diamond Wire ◽  
Brittle Ductile Transition ◽  
Wire Saw ◽  
Diamond Wire Saw ◽  
R Value ◽  
Material Removal Mode

Based on reciprocating electroplated diamond wire saw (REDWS) slicing experiments, a study on REDWS machining brittle-ductile transition of single crystal silicon was introduced. The machined surfaces and chips were observed by using Scanning Electron Microscope (SEM), and some experimental evidences of the change of material removal mode had been obtained. The experimental results indicate there is a close relationship between material removal mode and the ratio r value of ingot feed speed and wire speed, through controlling and adjusting the r value, the material removal mode can be complete brittle, partial ductile and near-ductile removal.

Optimization of Slicing Parameters of Single Crystal Silicon Sliced by Diamond Wire Saw

2012 ◽  
Vol 500 ◽  
pp. 89-93 ◽  
Author(s):  
J.F. Meng ◽  
Y.P. Han
Keyword(s):  
Single Crystal ◽  
Random Vibration ◽  
Single Crystal Silicon ◽  
Machine Precision ◽  
Crystal Silicon ◽  
Diamond Wire ◽  
Feed Force ◽  
Wire Saw ◽  
Diamond Wire Saw ◽  
Moving Speed

The slicing technology of hard-brittle materials by endless diamond wire saw has the advantages of higher moving speed of wire saw, better slicing quality, and thin kerf. According to the strength of wire saw, the cutting force and the random vibration of wire saw, the slicing parameters are optimized. As single crystal silicon is sliced, the constant feed force is less than 10N, the maximum pretension is 30N, and the highest moving speed of wire saw is 24m/s. But because the restrict of machine precision, the highest slicing speed is 16m/s.

scholarly journals Effects of Depth of Cutting on Damage Interferences during Double Scratching on Single Crystal SiC

Crystals ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 519
Author(s):  
Duan Nian
Keyword(s):  
Single Crystal ◽  
Material Removal ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Particle Hydrodynamics ◽  
Single Crystal Sic ◽  
Smoothed Particle ◽  
Planarization Process ◽  
Material Removal Mode ◽  
Sic Wafer

In this work, the damage interference during scratching of single crystal silicon carbide (SiC) by two cone-shaped diamond grits was experimentally investigated and numerically analyzed by coupling the finite element method (FEM) and smoothed particle hydrodynamics (SPH), to reveal the interference mechanisms during the micron-scale removal of SiC at variable Z-axis spacing along the depth of cutting (DOC) direction. The simulation results were well verified by the scratching experiments. The damage interference mechanism of SiC during double scratching at micron-scale was found to be closely related to the material removal modes, and can be basically divided into three stages at different DOCs: combined interference of plastic and brittle removal in the case of less than 5 µm, interference of cracks propagation when DOC was increased to 5 µm, and weakened interference stage during the fracture of SiC in the case of greater than 5 µm. Hence, DOC was found to play a determinant role in the damage interference of scratched SiC by influencing the material removal mode. When SiC was removed in a combined brittle-plastic mode, the damage interference occurred mainly along the DOC direction; when SiC was removed in a brittle manner, the interference was mainly along the width of cutting; and more importantly, once the fragment of SiC was initiated, the interference was weakened and the effect on the actual material removal depth also reduces. Results obtained in this work are believed to have essential implications for the optimization of SiC wafer planarization process that is becoming increasingly important for the fabrication of modern electronic devices.

scholarly journals Recycling of the Diamond-wire Saw Powder by Ni-catalyzed Nitridation to Prepare Si3N4

2021 ◽  
Author(s):  
Hongli Xu ◽  
Xing Jin ◽  
Xuetong Zhou ◽  
Xinghong Du ◽  
Pengfei Xing ◽  
...  
Keyword(s):  
Single Crystal Silicon ◽  
Silica Film ◽  
Crystal Silicon ◽  
Diamond Wire ◽  
Wire Saw ◽  
Diamond Wire Saw ◽  
Different Temperatures ◽  
Direct Nitridation ◽  
Lower Temperature ◽  
Nitridation Temperature

Abstract In this paper, the acceleration of nickel (Ni) in the direct nitridation process of the diamond-wire saw powder (DWSP) was investigated. The DWSP doped with Ni additives were nitrided at different temperatures. To study the mechanism of accelerated nitridation, the thermodynamics of Si-O-N-Ni was analyzed by FactSage 7.2 and single-crystal silicon blocks were also nitrided instead of the DWSP. The results revealed that Ni decreased the nitridation temperature at which the DWSP began to gain significant weight and exhibited an excellent accelerating effect on the nitridation of the DWSP. At 1300℃, the DWSP containing 2.0 wt.% Ni additives had been completely nitrided within 2 h, whereas the DWSP without Ni additives had not been nitrided yet. Based on the equivalent substitution experiment, it could be conducted that the presence of Ni additives accelerated the nitridation and promoted the formation of the α-Si3N4 nanorods through facilitating the generation of the SiO(g) and destructing the silica film on the surface of silicon at lower temperature. Meanwhile, Ni additives also played an important part in the growth of α-Si3N4 nanorods by forming liquid Ni-Si alloy in the product.

scholarly journals Prediction And Verification of Wafer Surface Morphology in Ultrasonic Vibration Assisted Wire Saw (UAWS) Slicing Single Crystal Silicon Based On Mixed Material Removal Mode

2021 ◽  
Author(s):  
Yan Wang ◽  
Rui Wang ◽  
Shusheng Li ◽  
Jianguo Liu ◽  
Lixing Song
Keyword(s):  
Surface Morphology ◽  
Single Crystal ◽  
Surface Quality ◽  
Single Crystal Silicon ◽  
Wafer Surface ◽  
Crystal Silicon ◽  
Wire Saw ◽  
Mixed Material ◽  
Material Removal Mode

Abstract Monocrystalline silicon is one of the most important semiconductor materials, widely used in chip manufacturing, solar panels. Slicing is the first step in making chips and the surface quality of silicon wafers directly affects the quality of later processing and accounts for a large proportion in the chip manufacturing cost. Ultrasonic vibration assisted wire saw (UAWS) is an effective sawing process for cutting hard and brittle materials such as monocrystalline Si, which can significantly improve the surface quality of silicon wafers. In order to further study the formation mechanism of the surface morphology of single crystal silicon sliced by UAWS, a new model for prediction of wafer surface morphology in UAWS slicing single crystal silicon based on mixed material removal mode is presented and verified in this paper. Firstly, the surface model of diamond wire saw tool is established by equal probability method. Then according to the equation of transverse vibration dynamics about the wire saw with ultrasonic excitation, the trajectory equation of arbitrary abrasive particles on the surface of wire saw is derived and analyzed. Thirdly, a new model for prediction of the wafer surface morphology based on mixed material removal mode is presented, which can be used to predict the wafer surface morphology of single crystal silicon sliced by UAWS. Finally, the prediction model is verified by UAWS slicing experiment, and the effects of slicing parameters such as wire saw speed, feed speed and workpiece rotate speed on the surface quality of silicon wafer were studied. It shows that the predicted wafer surface morphology and the experimental wafer surface morphology are similar in some characteristics, and the average error between the experimental and the theoretical values of the wafer surface roughness is 11.9%, which verifies the validity of the prediction model.

Analysis of Grit Cut Depth in Fixed-Abrasive Diamond Wire Saw Slicing Single Crystal Silicon

2011 ◽  
Vol 175 ◽  
pp. 72-76 ◽  
Author(s):  
Yu Fei Gao ◽  
Pei Qi Ge
Keyword(s):  
Single Crystal ◽  
Process Parameters ◽  
Silicon Crystal ◽  
Single Crystal Silicon ◽  
Feed Speed ◽  
Crystal Silicon ◽  
Wire Saw ◽  
Diamond Wire Saw ◽  
Cut Depth ◽  
Fixed Abrasive

A mathematical model to calculate the grit average cut depth in wire sawing single crystal silicon was founded. So the grit average cut depths were calculated theoretically by choosing different process parameters, and influences of process parameters on grit cut depths of slicing silicon crystal were analyzed. Analysis results indicate that the grit average cut depth relates to the silicon mechanical properties, grit shape and size, wire speed and ingot feed speed, etc. And there is a monotone increasing non-linear correlation between grit average cut depth and the ratio i value of ingot feed speed and wire speed, when the i value is lower, the average grit cut depth is lower.

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