Properties of Vanadium Oxide Films Prepared by DC Reactive Magnetron Sputtering at Different Oxygen Partial Pressures

2012 ◽  
Vol 538-541 ◽  
pp. 105-109 ◽  
Author(s):  
Ren Gui Huang ◽  
Dong Ping Zhang ◽  
Ting Zhang ◽  
Yan Li ◽  
You Tong Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Vanadium Oxide ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Oxide Thin Films ◽  
Dc Reactive Magnetron Sputtering ◽  
Vanadium Oxide Thin Films

Due to their unique physical and chemical properties, vanadium oxide thin films have become a hot research topic. In the present work, Vanadium oxide thin films were prepared by DC reactive magnetron sputtering at different oxygen partial pressure and thermally annealed in Ar atmosphere at 500°C for 2 hours. The microstructure, transmittance, optical band gap, resistivity, and temperature coefficient resistance (TCR) were measured. The results suggest that increasing of oxygen partial pressure can obviously improve the optical and electric properties

W-Doped Vanadium Oxide Thin Films Prepared by Reactive Magnetron Sputtering

2013 ◽  
Vol 652-654 ◽  
pp. 1747-1750
Author(s):  
Shuang Chen ◽  
Li Fang Zhang ◽  
Cui Zhi Dong ◽  
Kuai Zhang ◽  
Xiudong Zhu
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Vanadium Oxide ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Oxide Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Vanadium Oxide Thin Films

W-doped Vanadium oxide thin films were prepared on the substrates of glass and Si (100) by reactive magnetron sputtering after annealing in vacuum. The structure and morphology were characterized by X-ray diffractometer and atomic force microscopy(AFM), respectively. The results show that,when the oxygen volume percent (Po2) increasing from 15% to 25%, the films on the Si(100) were vanadium oxides with high-valences. After vacuum annealing at 500°C for 2h, the major phase of W doped films on glass is VO2. The surface roughness of the film increase for the longer time annealing.

Structure Characterization of W-Doped Vanadium Oxide Thin Films Prepared by Reactive Magnetron Sputtering

2013 ◽  
Vol 690-693 ◽  
pp. 1694-1697
Author(s):  
Shuang Chen ◽  
Li Fang Zhang ◽  
Shu Juan Xiao ◽  
Cui Zhi Dong
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Magnetron Sputtering ◽  
Vanadium Oxide ◽  
Reactive Magnetron Sputtering ◽  
Structure Characterization ◽  
Root Mean Square Roughness ◽  
Reactive Magnetron ◽  
Oxide Thin Films ◽  
Vanadium Oxide Thin Films

W-doped Vanadium oxide thin films were prepared on the substrates of SiO2 glass, float glass and Si (100) by reactive magnetron sputtering after annealing in vacuum. The structure, morphology and phase transition were characterized by X-ray diffractometer, atomic force microscopy (AFM) and differential thermal analysis (DTA), respectively. The results show that, the major phase of W-doped films on SiO2 glass is VO2.Dopant reduce the phase transition temperature of VO2 thin films to 21.9°C. The root-mean-square roughness of the film increase for the longer deposition time.

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