Effect of Oxygen Incorporation on the Properties of AlF3 Films

2013 ◽  
Vol 631-632 ◽  
pp. 121-126
Author(s):  
Xu Li ◽  
Jian Sun ◽  
Wei Li Zhang ◽  
Yong Qiang Hou ◽  
Kai He ◽  
...  
Keyword(s):  
Optical Properties ◽  
Chemical Composition ◽  
Optical Absorption ◽  
Substrate Temperature ◽  
Laser Damage ◽  
Total Stress ◽  
Damage Resistance ◽  
Evaporation Technique ◽  
Effect Of Oxygen ◽  
Coating Chamber

In order to reveal the influence of oxidization on the properties of AlF3 films, single layers of AlF3 were deposited at different substrate temperature by thermo evaporation technique with or without oxygen injected into the coating chamber. The chemical composition, total stress, optical properties and laser damage resistance of samples were characterized. Comparative study indicates the AlF3 films prepared under higher oxygen pressure have more oxides which result from hydration process in atmosphere. The presence of oxides also reduces total stress and optical absorption of the fluoride coatings.

Relation of optical properties and femtosecond laser damage resistance for Al2O3/AlF3 and Al2O3/SiO2 composite coatings

2014 ◽  
Vol 53 (4) ◽  
pp. A383 ◽  
Author(s):  
Mathias Mende ◽  
Istvan Balasa ◽  
Henrik Ehlers ◽  
Detlev Ristau ◽  
Dam-be Douti ◽  
...  
Keyword(s):  
Optical Properties ◽  
Femtosecond Laser ◽  
Composite Coatings ◽  
Laser Damage ◽  
Damage Resistance

Optical Properties of Thin Films of Haycockite

MRS Advances ◽  
2019 ◽  
Vol 4 (37) ◽  
pp. 2023-2033
Author(s):  
Barys Korzun ◽  
Marin Rusu ◽  
Thomas Dittrich ◽  
Anatoly Galyas ◽  
Andrey Gavrilenko
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Chemical Composition ◽  
Energy Band ◽  
Surface Photovoltage ◽  
Second Phase ◽  
Energy Band Gap ◽  
Flash Evaporation ◽  
Glass Substrates ◽  
Evaporation Technique

ABSTRACTThin films of haycockite Cu4Fe5S8 on glass substrates were deposited by flash evaporation technique from powders of this compound. The composition of thin films correspond to the atomic content of Cu, Fe, and S of 24.13, 27.90, and 47.97 at.% with the Cu/ Fe and S/ (Cu + Fe) atomic ratios of 0.87 and 0.92 respectively, whereas the corresponding theoretical values for this material amount to 0.80 and 0.89. The as-prepared thin films of haycockite consist of a set of separate fractions of approximately identical areas of about 400 - 600 μm2. It can be assumed that this structure evolved during cooling down of thin films since it completely covers the surface of thin films. A small inclusion of a second phase with the chemical composition close to talnakhite Cu9Fe8S16 is also observed. Haycockite Cu4Fe5S8 is found to be a direct gap semiconductor with the energy band gap Eg equal to 1.26 eV as determined using both transmission and surface photovoltage methods.

scholarly journals Process-Parameter-Dependent Structural, Electrical, and Optical Properties of Reactive Magnetron Sputtered Ag-Cu-O Films

2011 ◽  
Vol 2011 ◽  
pp. 1-8 ◽  
Author(s):  
P. Narayana Reddy ◽  
A. Sreedhar ◽  
M. Hari Prasad Reddy ◽  
S. Uthanna ◽  
J. F. Pierson
Keyword(s):  
Optical Properties ◽  
Substrate Temperature ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Rf Magnetron Sputtering ◽  
Low Oxygen ◽  
Electrical And Optical Properties ◽  
Partial Pressures ◽  
Effect Of Oxygen ◽  
Parameter Dependent

Silver-copper-oxide thin films were formed by RF magnetron sputtering technique using Ag80Cu20target at various oxygen partial pressures in the range 5 × 10−3–8 ×10−2 Pa and substrate temperatures in the range 303–523 K. The effect of oxygen partial pressure and substrate temperature on the structure and surface morphology and electrical and optical properties of the films were studied. The Ag-Cu-O films formed at room temperature (303 K) and at low oxygen partial pressure of 5 × 10−3 Pa were mixed phase of Ag2Cu2O3and Ag, while those deposited at 2 × 10−2 Pa were composed of Ag2Cu2O4and Ag2Cu2O3phases. The crystallinity of the films formed at oxygen partial pressure of 2 × 10−2Pa increased with the increase of substrate temperature from 303 to 423 K. Further increase of substrate temperature to 523 K, the films were decomposed in to Ag2O and Ag phases. The electrical resistivity of the films decreased from 0.8 Ωcm with the increase of substrate temperature from 303 to 473 K due to improvement in the crystallinity of the phase. The optical band gap of the Ag-Cu-O films increased from 1.47 to 1.83 eV with the increase of substrate temperature from 303 to 473 K.

Correlation of Optical Properties and Laser Damage Resistance for Ion Beam Sputtered Al2O3/AlF3 and Al2O3/SiO2 Mixture Coatings

2013 ◽  
Author(s):  
Mathias Mende ◽  
Istvan Balasa ◽  
Henrik Ehlers ◽  
Detlev Ristau ◽  
Dam-Bé Lardja Douti ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Beam ◽  
Laser Damage ◽  
Damage Resistance

Temperature dependences of optical properties, chemical composition, structure, and laser damage in Ta 2 O 5 films

2012 ◽  
Vol 21 (11) ◽  
pp. 114213 ◽  
Author(s):  
Cheng Xu ◽  
Shuai Yang ◽  
Sheng-Hui Zhang ◽  
Ji-Nan Niu ◽  
Ying-Huai Qiang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Chemical Composition ◽  
Laser Damage ◽  
Temperature Dependences ◽  
Composition Structure
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