Effect of K2S2O8 on Material Removal Rate in Abrasive-Free Polishing of Hard Disk Substrate

2013 ◽  
Vol 690-693 ◽  
pp. 3222-3225 ◽  
Author(s):  
Rong Zhao ◽  
Hong Lei
Keyword(s):  
Material Removal Rate ◽  
Material Removal ◽  
Removal Rate ◽  
Hard Disk ◽  
Resonance Spectroscopy ◽  
Electrochemical Test ◽  
Spin Resonance ◽  
Hard Disk Substrate ◽  
Disk Substrate

The role of K2S2O8 (KPS) initiator on the material removal rate (MRR) of hard disk substrate in the H2O2-based slurry was investigated. Experiment results indicate that the MRR of slurry containing KPS and H2O2 is higher than that of slurry containing only H2O2 under the same testing conditions. The electrochemical test shows that KPS can increase the corrosion rate of hard disk substrate in the H2O2-based slurry. The electron spin-resonance spectroscopy (EPR) analysis shows that KPS, as an initiator, can increase the number of OH• free radical. Further, the reaction mechanism of KPS in abrasive-free polishing of hard disk substrate is discussed.

Abrasive-Free Polishing of Hard Disk Substrate with H2O2-K2S2O8-NaHSO3 Slurry

2013 ◽  
Vol 690-693 ◽  
pp. 3209-3212 ◽  
Author(s):  
Wei Tao Zhang ◽  
Hong Lei
Keyword(s):  
Removal Rate ◽  
Hard Disk ◽  
Corrosion Current ◽  
Polarization Measurement ◽  
Resonance Spectroscopy ◽  
Hydroxyl Free Radical ◽  
Potassium Peroxydisulfate ◽  
Hard Disk Substrate ◽  
Initiator System ◽  
Disk Substrate

The effect of potassium peroxydisulfate-sodium hydrogensulfite (K2S2O8- NaHSO3) as an initiator system in H2O2 –based slurry for the abrasive-free polishing (AFP) of hard disk substrate was investigated. The polishing experimental results showed that the H2O2-K2S2O8-NaHSO3 slurry had ten times higher material removal rate (MRR) than the H2O2 slurry in AFP of the hard disk. Further, the polishing mechanism of H2O2-K2S2O8-NaHSO3 slurry was investigated. Compared with the H2O2 slurry, electron spin-resonance spectroscopy (EPR) analysis showed that the H2O2-K2S2O8-NaHSO3 slurry provides twenty times higher concentration of hydroxyl free radical. Potentiodynamic polarization measurement showed that the corrosion current of disk substrate in the H2O2-K2S2O8-NaHSO3 slurry is larger than that in the H2O2 slurry. The results imply that K2S2O8-NaHSO3 as an initiator system for H2O2–based slurry has application prospects in abrasive-free polishing.

Effect of pH on Hard Disk Substrate Polishing in Glycine-Hydrogen Peroxide System Abrasive-Free Slurry

2013 ◽  
Vol 562-565 ◽  
pp. 691-696 ◽  
Author(s):  
Si Si Chen ◽  
Hong Lei ◽  
Ru Ling Chen
Keyword(s):  
Hydrogen Peroxide ◽  
Material Removal ◽  
Electrochemical Impedance ◽  
Removal Rate ◽  
Hard Disk ◽  
Reaction Scheme ◽  
Solution Ph ◽  
Effect Of Ph ◽  
Hard Disk Substrate ◽  
Disk Substrate

The effect of pH on the material removal rate (MRR) and surface roughness (Ra) of hard disk substrate in glycine–hydrogen peroxide system abrasive-free slurry was investigated. The results show that, the MRR of hard disk substrate increases when both glycine and H2O2 are used in acidic slurries (pH=3.0) and decreases drastically in alkaline slurries (pH=10.0). The Ra of hard disk substrates is small in acidic slurries and increases drastically in alkaline slurries. Further, the effects of glycine, H2O2, and solution pH on hard disk removal were investigated by auger electron spectroscopy (AES), electrochemical impedance spectroscopy (EIS) and potentiodynamic polarization measurements. We also develop a reaction scheme describing the surface chemistry of the hard disk in this system.

Effect of Cu (II) Ion on Abrasive-Free Polishing of Hard Disk Substrate with Peroxyacetic Acid System Slurry

2013 ◽  
Vol 753-755 ◽  
pp. 333-336
Author(s):  
Zhi Jun Wang ◽  
Hong Lei
Keyword(s):  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Hard Disk ◽  
Electrochemical Analysis ◽  
Acid System ◽  
Peroxyacetic Acid ◽  
Polishing Process ◽  
Hard Disk Substrate ◽  
Disk Substrate

Recently, abrasive-free polishing (AFP) has attracted a great deal of attention due to its gentler polishing process and lower particle residue than traditional chemical mechanical polishing (CMP). Our present work investigates the effectiveness of Cu (II) ion on AFP of hard disk substrate in peroxyacetic acid (PAA) system slurry. The polishing experimental results show that the PAA/Cu (II) system slurry has higher material removal rate (MRR) and lower roughness (Ra) than PAA system. Further, the reaction mechanism of Cu (II) ion in PAA/Cu (II) system AFP of hard disk substrate was investigated preliminarily by electrochemical analysis.

Effect of AIBA on Abrasive-Free Polishing of Hard Disk Substrate with Peroxyacetic Acid System Slurry

2014 ◽  
Vol 551 ◽  
pp. 61-65
Author(s):  
Xiao Yan Ren ◽  
Hong Lei
Keyword(s):  
Material Removal ◽  
Oxidation Reaction ◽  
Removal Rate ◽  
Hard Disk ◽  
Electron Spectrometer ◽  
Peroxyacetic Acid ◽  
Dissolution Reaction ◽  
Acting Mechanism ◽  
Hard Disk Substrate ◽  
Disk Substrate

In the present study, the effect of 2, 2`-Azobis (2-methylpropionamidine) dihydrochloride (AIBA) on the abrasive-free polishing (AFP) of hard disk substrate was investigated. Polishing experiment results indicate that the material removal rate (MRR) of hard disk substrate polished in slurry containing AIBA and peroxyacetic acid (PAA) is obviously higher than that without AIBA. Furthermore, the acting mechanism of AIBA in AFP of hard disk substrate was analyzed. Auger electron spectrometer results demonstrate that the oxidation reaction occurred on the surface and formed a passivation layer. The potentiodynamic polarization tests show that AIBA can increase the corrosion rate of the hard disk substrate in PAA-based slurry, and accelerate the dissolution reaction of oxidation film, which lead to the improved MRR in AFP process.

Effect of Mn (II) Ion on Abrasive-Free Polishing of Hard Disk Substrate

2014 ◽  
Vol 599-601 ◽  
pp. 44-47
Author(s):  
Liang Fang ◽  
Hong Lei ◽  
Rong Zhao
Keyword(s):  
Free Radical ◽  
Chemical Etching ◽  
Substrate Surface ◽  
Hard Disk ◽  
Electron Spin Resonance Spectroscopy ◽  
Resonance Spectroscopy ◽  
Spin Resonance ◽  
Acting Mechanism ◽  
Hard Disk Substrate ◽  
Disk Substrate

With high requirement setting for hard disk substrate surface quality, abrasive-free polishing (AFP) has attracted more researchers’ attention. In this paper, the influence of Mn (Ⅱ) ion on AFP of hard disk substrate in the H2O2based slurry was investigated. The experiments results show that Mn (Ⅱ) ion can effectively increase the material remove rate (MRR) and improve the planarization of hard disk substrate. Furthermore, the acting mechanism of Mn (Ⅱ) ion in AFP of hard disk substrate was analyzed. The electron spin-resonance spectroscopy (EPR) analysis shows that Mn (Ⅱ) ion in the H2O2based slurry not only can increase the concentration of ·OH free radical, but also can make H2O2decompose to ·O2–free radical. These free radicals can accelerate the chemical etching and increase the MRR of hard disk substrate.

Cu (II) as a Catalyst for Hydrogen Peroxide System Abrasive-Free Polishing on Hard Disk Substrate

2013 ◽  
Vol 562-565 ◽  
pp. 91-95 ◽  
Author(s):  
Zhi Jun Wang ◽  
Hong Lei ◽  
Wei Tao Zhang ◽  
Rong Zhao
Keyword(s):  
Hydrogen Peroxide ◽  
Removal Rate ◽  
Hard Disk ◽  
Disk Drive ◽  
Polished Surface ◽  
Resonance Spectroscopy ◽  
Continuous Increase ◽  
Hard Disk Substrate ◽  
Disk Substrate ◽  
H2o2 System

With the continuous increase of the hard disk drive capacity, higher requirements are set for hard disk substrate to minimize roughness and defects of the polished surface. Recently, abrasive-free polishing (AFP) has attracted a great deal of attention due to AFP has fewer micro scratches and better cleaning ability than traditional chemical mechanical polishing (CMP). Our present work investigates the effectiveness of Cu (Ⅱ) as a catalyst for hard disk substrate AFP with H2O2 employed as an oxidizer. Polishing slurries used in AFP on hard disk substrate include deionized water, dispersant and oxidizer. The polishing experimental results show that the slurry of H2O2/Cu(Ⅱ) system has higher material removal rate (MRR) than H2O2 system in abrasive-free polishing on hard disk substrate. Further, the catalytic reaction mechanism of Cu (Ⅱ) in AFP of hard disk substrate was investigated. Compared with the H2O2 system, electron spin-resonance spectroscopy (EPR) analysis shows that the H2O2/Cu(Ⅱ) system provides higher concentration of hydroxyl radical. Potentiodynamic polarization measurements shows that corrosion currents (icorr) of disk substrate in the H2O2/Cu(Ⅱ) system is larger than that in the H2O2 system. The results imply that Cu (Ⅱ) as a catalyst for hydrogen peroxide system possesses promising prospects in abrasive-free polishing.

Abrasive-Free Chemical Polishing of Hard Disk Substrate with Benzoyl Peroxide-H2O2 Slurry

2014 ◽  
Vol 551 ◽  
pp. 66-70
Author(s):  
Ting Jiang ◽  
Hong Lei
Keyword(s):  
Electron Spin Resonance ◽  
Auger Electron ◽  
Hard Disk ◽  
Electron Spin Resonance Spectroscopy ◽  
Resonance Spectroscopy ◽  
Electron Spectrometer ◽  
Electrochemical Tests ◽  
Spin Resonance ◽  
Hard Disk Substrate ◽  
Disk Substrate

The effect of benzoyl peroxide (BPO) as an initiator in H2O2slurry for abrasive-free chemical polishing of hard disk substrate was investigated. The results of abrasive-free polishing tests show that the introduction of BPO increases material removal rate (MRR) and decreases the value of Roughness (Ra). To further investigate the mechanism of abrasive-free polishing, electron spin-resonance spectroscopy (EPR) tests, auger electron spectrometer (AES) and electrochemical tests were conducted. Electron spin-resonance spectroscopy (EPR) tests show the concentration of radicals increase and promote the reaction on the surface of hard disk substrate. Auger electron spectrometer (AES) and electrochemical tests indicate chemical changes happen on the surface of hard disk substrate, and the formed oxide film may be sparse or porous. The results imply that the introduction of BPO can effectively improve the effect of abrasive-free polishing.

scholarly journals Comparative Analysis of Machining Characteristics of EDM and ECM during Machining of Ti-6Al-4V

2021 ◽  
Vol 23 (2) ◽  
Author(s):  
Banwait S.S. ◽  
◽  
Sanjay S ◽  
Keyword(s):  
Surface Roughness ◽  
Material Removal Rate ◽  
Electric Discharge ◽  
Material Removal ◽  
Removal Rate ◽  
Electric Discharge Machining ◽  
Pulse On Time ◽  
Surface Finish Effect ◽  
Machining Characteristics

The present work explains the machining of Titanium alloy using Electric Discharge Machining & Electro-Chemical Machining. This work aims to analyze the role of Current, Pulse on Time, Voltage and hence optimize the Material Removal Rate and Surface Roughness in Electric Discharge Machining. In the same way, it also aims to analyze the role of Concentration, Feed, and Voltage and optimize the Material Removal Rate and Surface Roughness in Electro-Chemical Machining. The various approaches like Taguchi & Analysis of Variance are executed to study the performance characteristics of the input parameters on the output parameters. The whole work is followed by a validation test and hence confirming the obtained values. Thus, it reveals the acceptability of the model. The work tells that Material Removal Rate and Surface Finish effect is more in Electro-Chemical Machining as compared to Electric Discharge Machining. For Material Removal Rate, Current and Feed are more responsible parameters for Electric Discharge Machining. In the same way; electrolyte concentration and Feed are more responsible parameters for Electro-Chemical Machining respectively.

Polishing Mechanism and Technology of Hard Disk Substrates by Colloidal Silica Alkaline Slurry

2010 ◽  
Vol 44-47 ◽  
pp. 3072-3076
Author(s):  
Sheng Li Wang ◽  
Zhen Xia Li ◽  
Li Bing Yang ◽  
Yu Tian ◽  
Hui Lai Mu
Keyword(s):  
Surface Roughness ◽  
Colloidal Silica ◽  
Removal Rate ◽  
Substrate Surface ◽  
Hard Disk ◽  
Transfer Velocity ◽  
Nickel Ions ◽  
Hard Disk Substrate ◽  
Polishing Pressure ◽  
Disk Substrate

Chemical mechanical polishing (CMP) has been a widely applied process for nickel-phosphorus (Ni-P) coating hard disk substrate polishing. In this study, colloidal silica-based alkaline slurry was prepared for polishing Ni-P plated substrates and its CMP mechanism was studied with alkali slurry. Effects of the various process parameters such as polishing pressure and plate speed on hard disk substrate were investigated. The results show that the polishing pressure and plate speed have a strong influence on the material removal rate and surface roughness of the hard disk substrate. The oxidization layer formed on hard disk substrate surface after polishing. The nickel ions were bounded with amidocyanogen to form stable and soluble macromolecular amidocyanogen-complex agent, improved selectivity of convex region and concave region, enhanced the chemical reaction uniformity and the mass transfer velocity, and thus high removal rate and low surface roughness could be realized.

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