Enhanced Light Absorption and Minority Carrier Lifetime for Pn+ Multicrystalline Silicon by Treatment with HF/H2O2-Based Solutions
2013 ◽
Vol 712-715
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pp. 341-344
Keyword(s):
A novel method was proposed to form porous silicon (PS) antireflection layers and thin SiO2 films at the same time by HF/H2O2 treatment of acid-textured pn+ multicrystalline silicon. Porous silicon structures formed inside the cavities and the porosity became large with an increase of the treated time resulting in a dramatical decrease of reflectance. The reflectance decreased to less than 5% within the wavelength range of 420-970 nm after 5 min HF/H2O2 treatment. Furthermore, the minority-carrier lifetime showed an increase of about 42% for a short treated time because of the formation of a thin silicon oxide layer resulting the reduction of dangling silicon bonds in the interface between PS/Si.
2012 ◽
Vol 258
(20)
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pp. 8046-8048
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2013 ◽
Vol 440
◽
pp. 82-87
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2011 ◽
Vol 176
(18)
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pp. 1541-1545
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Keyword(s):
Keyword(s):
2015 ◽
2002 ◽
Vol 74
(1-4)
◽
pp. 183-193
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2013 ◽
Vol 114
◽
pp. 54-58
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Keyword(s):