X-ray diffraction and photoluminescence studies of zinc oxide films grown on silicon substrates by dc reactive magnetron sputtering

2008 ◽  
Vol 23 (S1) ◽  
pp. S94-S97 ◽  
Author(s):  
G. Juárez-Díaz ◽  
H. Solache-Carranco ◽  
G. Romero-Paredes R. ◽  
R. Peña-Sierra ◽  
J. Martínez-Juárez ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Reactive Magnetron Sputtering ◽  
Zno Films ◽  
Silicon Substrates ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Zinc Oxide Films ◽  
Dc Reactive Magnetron Sputtering

Thin polycrystalline ZnO films were grown on silicon substrates by dc reactive magnetron sputtering using zinc oxide targets. The quality of the ZnO layers was assessed by X-ray diffraction (XRD), atomic force microscopy, Raman scattering, and photoluminescence measurements. The XRD studies and Raman studies revealed that the ZnO films crystallize in the wurtzite structure. Room temperature photoluminescence spectra consisted of a narrow near-band-edge ultraviolet band and a broad defect-related green band with peak positions at 380 and 516 nm, respectively. The main goal of the work was to define the growth conditions to prepare zinc oxide films with adequate properties to be used in electroluminescent devices. The films exhibited the best surface appearance with a 40:1 argon/oxygen flow rate, a total pressure of 1.5×10−3 mbar, and a substrate temperature of 230 °C. The structural and luminescence properties improved noticeably with the thermal annealing processes at 800 °C for 1 h.

STUDY ON MICROSTRUCTURE AND PROPERTY OF Pt-DOPED WO3 FILMS

2007 ◽  
Vol 21 (18n19) ◽  
pp. 3489-3492
Author(s):  
YINFENG WANG ◽  
ANPING LIU ◽  
XUEHENG YANG ◽  
XIAOPING SU
Keyword(s):  
Magnetron Sputtering ◽  
Change Process ◽  
Sol Gel ◽  
Composite Films ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gel Film ◽  
Dc Reactive Magnetron Sputtering

We have prepared Pt -doped WO 3 composite films by sol-gel compounding and DC reactive magnetron sputtering respectively. Spectra change process according to the absorbing hydrogen time has been characterized by UV-VIS, X-ray diffraction spectra of two kinds of samples have been studied in this paper, and the crystallization temperature of film has been observed at the same time. As a result, both two WO 3 composite films are better sensitive to hydrogen by Pt -doping and the Pt sputtered sol-gel film has faster response to hydrogen than the Pt sputtered film by DC reactive magnetron sputtering, but the changes of luminousness are almost equal for two films.

Structure and Oxidation Behavior CrN Thin Films Deposited Using DC Reactive Magnetron Sputtering

2019 ◽  
Vol 798 ◽  
pp. 122-127
Author(s):  
Adisorn Buranawong ◽  
Nirun Witit-Anun
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Oxidation Behavior ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ceramic Thin Films ◽  
Dc Reactive Magnetron Sputtering ◽  
Wafer Substrate

The CrN ceramic thin films were deposited using DC reactive magnetron sputtering system on silicon wafer substrate. Oxidation behavior was carried out in air at evaluated temperatures ranging from 500 °C up to 900 °C for 2 h. The structure and element composition of the films at different thermal annealing temperatures ranging were investigated by X-ray diffraction (XRD), Field Emission Scanning Electron Microscopy (SEM) and Energy Dispersive X-ray Spectroscopy (EDS), respectively. The oxidation activation energies of the films were calculated using Arrhenius equation. The changes in the crystal structure from CrN to Cr2O3 phase were investigated from XRD results. The accumulation of grains on surface was confirmed by FESEM micrographs. The cross-section analysis showed an apparent columnar feature with dense structure for the film annealed at low temperature, and becomes porous when increasing the annealing temperature. The thickness was increased from 1.43 to 2.67 μm. The EDS studies indicated the existence of Cr, N and O with different elements compositions on the deposited thin films. The oxidation activation energy for the CrN thin films is 124.4 kJ/mol.

Influence of Ar/O2 Ratio on the Prpoperties of Transparent Conducting ZnO:Zr Films Deposited by DC Reactive Magnetron Sputtering

2011 ◽  
Vol 335-336 ◽  
pp. 964-967
Author(s):  
Hua Fu Zhang ◽  
Xin Feng Wang
Keyword(s):  
Magnetron Sputtering ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
Electrical And Optical Properties ◽  
X Ray ◽  
Glass Substrates ◽  
Transparent Conducting ◽  
Dc Reactive Magnetron Sputtering ◽  
Probe Measurements

Transparent conducting ZnO:Zr thin films were deposited on glass substrates by DC reactive magnetron sputtering in Ar+O2ambience with different Ar/O2 ratios. The structural, electrical and optical properties of ZnO:Zr films were analyzed by X-ray diffraction, four-point probe measurements and UV–vis spectrophotometers. When Ar/O2ratio increases from 20:1 to 25:1, the resistivity significantly decreases because of the improvement of the crystallinity. However, with further increase in Ar/O2ratio, the crystallinity begins to deteriorate resulting in an increase in the resistivity. The films deposited at the optimum Ar/O2ratio of 25:1 have the minimum resistivity of 1.4×10-3Ω•cm and a high transmittance of above 92%.

Properties of Nanosized Tin Oxide Thin Film Prepared by Reactive Magnetron Sputtering

2007 ◽  
Author(s):  
Xiao Di Liu ◽  
Dacheng Zhang
Keyword(s):  
Magnetron Sputtering ◽  
Quartz Glass ◽  
Tin Oxide ◽  
Reactive Magnetron Sputtering ◽  
Oxide Thin Film ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Different Temperatures

Nanosized tin oxide thin films were fabricated on silicon and quartz glass substrates by direct current reactive magnetron sputtering method, and then were calcined at different temperatures ranging from 400°C to 900°C. The results analyzed by X ray photoemission spectra (XPS), scanning electron microscope (SEM), Spectroscopic ellipsometer, Powder X-ray diffraction (XRD), and HP4145B semiconductor parameter analyzer measurements show that the sample with quartz glass substrate and calcinated at 650°C possesses better properties and suitable to be used in our gas sensor.

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