Effect of Al(OH)3 Addition on the Properties of SiC/Al2O3 Composite Porous Ceramics

2013 ◽  
Vol 821-822 ◽  
pp. 1208-1212
Author(s):  
Cheng Ying Bai ◽  
Zhang Min Liu ◽  
Ya Ni Jing ◽  
Xiang Yun Deng ◽  
Jian Bao Li ◽  
...  

SiC/Al2O3composite porous ceramics were prepared by an in situ reaction bonding technique and sintering in air with SiC and A1(OH)3as starting materials. The pores in the ceramics were formed by stacking particles of SiC and A12O3. The surface of SiC was oxidized to SiO2at high temperature. With further increasing the temperature, SiO2reacted with A12O3to form mullite. The reaction bonding characteristics, phase composition, and mechanical strength as well as microstructure of porous SiC ceramics were investigated.

2008 ◽  
Vol 59 (2) ◽  
pp. 140-143 ◽  
Author(s):  
Shuqiang Ding ◽  
Yu-Ping Zeng ◽  
Dongliang Jiang

2020 ◽  
Vol 978 ◽  
pp. 454-462
Author(s):  
Dulal Das ◽  
Nijhuma Kayal

Currently, porous SiC ceramics have been a focus of interesting research in the field of porous materials due to their excellent structural properties, high strength, high hardness, and superb mechanical and chemical stabilities even at high temperatures and hostile atmospheres. Porous SiC ceramics have been considered as suitable candidate materials for catalyst supports [1-2], hot gas or molten metal filters [3], high temperature membrane reactors [4], thermal insulating materials [5], gas sensors [6] etc. Porous SiC ceramics are fabricated by various methods including partial sintering [7], carbothermal reduction [8-9], replication or pyrolysis of polymeric sponge [10-12], reaction bonding [13] etc. In all these methods SiC needs to be sintered which requires a very high temperature due to the strong covalent nature of the Si-C bond, selective sintering additives, expensive atmosphere, costly and delicate instrumentation. Processing of porous SiC ceramics at low temperature using a simple technique thus becomes necessary. Bonding of SiC can be done at low temperatures by use of different oxide and non-oxide secondary phases. They include silica, mullite, cordierite, silicon nitride, etc. Various sintering additives are used for the formation of variety of secondary oxide bond phases for formations for porous SiC [14-19] Choice of mullite as a bond for SiC has many advantages. Mullite possesses a high melting point (Tm= 1850°C) and a low oxygen diffusion coefficient (5.6 x 10-14 m2/sec at 50°C). It has a matching thermal expansion coefficient with SiC (CTEmullite= 5.3 ×10-6/K; CTESiC = 4.7 ×10-6/K at RT-1000 °C) and a high strength that can be retained up to a very high temperature. Different sources of aluminum, such as Al2O3, Al, AlN, and Al (OH)3 powders were used for the formation of mullite bonded porous SiC ceramics (MBSC) [20-21]. However, the mullitization temperature of 1550o C is still necessary. In this work, mullite bonded porous SiC ceramics were fabricated by an in situ reaction-bonding process; the mixture of clay and CaCO3 were chosen as sintering additives to lower the mullitization reaction between Al2O3 and oxidation-derived SiO2. The effect amount of alumina, sintering temperature and other sintering aids on material property such as porosity/pore size distribution mechanical and micro structural properties of porous oxide bonded SiC ceramics were studied.


2021 ◽  
pp. 161638
Author(s):  
Ruoyu Chen ◽  
Xinxin Jin ◽  
Daqian Hei ◽  
Peng Lin ◽  
Feng Liu ◽  
...  

2016 ◽  
Vol 848 ◽  
pp. 233-236
Author(s):  
Hong Fang Li ◽  
Yi Xia ◽  
Hong Ling Zhao

SiC porous ceramics were prepared by oxidation-bonding technique using SiC powder as main material and carbon black as pore former. The phase composition, surface morphologies, bulk densities, porosities, mass and linear changes of the samples were also investigated. The physical-chemical properties have been analyzed. The results indicate that the oxidation reaction of SiC ceramics was accelerated with the increase of temperatures. It displays undamaged surface after 1400°C treatment, as well as fused surface after 1450°C treatment. The latter is attributed to violent oxidation reaction of SiC. As C contents increase, the porosities of the samples increase and the infiltration of O2 into interior of SiC ceramics was facilitated. The internal network microstructure is controlled by O2 infiltration and SiO2 coating.


2005 ◽  
Vol 88 (9) ◽  
pp. 2619-2621 ◽  
Author(s):  
Sumin Zhu ◽  
Hong-An Xi ◽  
Qin Li ◽  
Ruoding Wang

2014 ◽  
Vol 608 ◽  
pp. 235-240 ◽  
Author(s):  
Chalermkwan Makornpan ◽  
Charusporn Mongkolkachit ◽  
Suda Wanakitti ◽  
Thanakorn Wasanapiarnpong

Silicon carbide (SiC) ceramics were prepared by carbothermal reduction together with in-situ reaction bonding. Raw rice husk was carbonized in an incineration furnace. The carbonized rice husk was ground and was then treated with hydrochloric acid by varying concentrations. The sample powders were mixed with silicon metal powder and pyrolyzed at various temperatures in either argon or nitrogen atmosphere. Silicon carbide phase was found in all pyrolyzed samples. Cristobalite was found in argon atmosphere pyrolyzed samples while silicon oxynitride was found in the samples pyrolyzed in nitrogen atmosphere at lower than 1500 °C. Silicon carbide whisker is the main phase on the surface of pyrolyzed sample. Increasing pyrolysis temperatures decreased the amount and size of silicon carbide whisker but increased the silicon carbide particle. Porosity and weight loss of samples after pyrolysis were increased with increasing temperatures due to the reaction in the system.


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