Growth Kinetics on Nanoscale: Finite Diffusion Permeability of Interfaces

2007 ◽  
Vol 266 ◽  
pp. 1-12 ◽  
Author(s):  
Dezső L. Beke ◽  
Z. Erdélyi
Keyword(s):  
Growth Kinetics ◽  
Composition Dependence ◽  
Interface Reaction ◽  
Diffusion Permeability ◽  
Diffusion Control ◽  
Fast Diffusion ◽  
Linear Relationships ◽  
Normal Diffusion ◽  
Interface Reaction Control ◽  
Short Times

Growth kinetic is either diffusion or interface reaction controlled process, characterized by parabolic or linear relationships, respectively. The well known diffusion paradox, predicting infinitely fast diffusion kinetics at short times (distances) for diffusion control will be discussed and resolved, by showing that the diffusion permeability across the interface should be finite at the very beginning of the process. Thus one can arrive at an atomistic interpretation of the interface transfer coefficient, K, and at linear growth kinetics even if there is no extra potential barrier present at the interface, usually assumed in the interpretation of interface reaction control. It is also shown that this phenomenon is a typical nanoeffect: after a certain diffusion distance (lying between 0.01 and 300 nm, depending on the composition dependence of the diffusion coefficient) the finite permeability of the interface will not restrict the growth and normal diffusion control will be observed.

Interface-reaction control of sintering

1973 ◽  
Vol 7 (10) ◽  
pp. 1075-1078 ◽  
Author(s):  
D. Lynn Johnson
Keyword(s):  
Interface Reaction ◽  
Interface Reaction Control

Interface Reaction Control of La2O3-gated InGaAs MOS Capacitors by Gate Metal Selection

2012 ◽  
Author(s):  
D. H. Zadeh ◽  
Y. Suzuki ◽  
H. Omine ◽  
K. Kakushima ◽  
P. Ahmet ◽  
...  
Keyword(s):  
Interface Reaction ◽  
Mos Capacitors ◽  
Interface Reaction Control

Interface Reaction Kinetics for Permalloy-Tantalum Thin Film Couples

1994 ◽  
Vol 343 ◽  
Author(s):  
A.J. Kellock ◽  
J.E.E. Baglin ◽  
K.R. Coffey ◽  
J.K. Howard ◽  
M.A. Parker ◽  
...  
Keyword(s):  
Thin Film ◽  
Grain Boundaries ◽  
Reaction Kinetics ◽  
Interface Reaction ◽  
Nucleation And Growth ◽  
Fast Diffusion ◽  
Temperature Range

ABSTRACTThermal interdiffusion mechanisms and kinetics have been studied for Ta-Permalloy (Ni80Fe20), Ta-Ni and Ta-Fe thin film couples, in the temperature range 300°C - 600°C. Interaction modes identified for the Ta-NiFe system include: fast diffusion of Ta into grain boundaries of NiFe, and nucleation and growth of Ni3Ta, with consequent depletion of Ni in the remaining NiFe, and eventual segregation of Fe.

Interfacial Interaction and Diffusion in Binary Systems

2007 ◽  
Vol 263 ◽  
pp. 75-80 ◽  
Author(s):  
Vasil I. Dybkov
Keyword(s):  
Growth Kinetics ◽  
Diffusion Coefficients ◽  
Chemical Compound ◽  
Binary Systems ◽  
Interfacial Interaction ◽  
Layer Growth ◽  
Diffusion Control ◽  
Great Care ◽  
Physico Chemical ◽  
And Diffusion

A physico-chemical consideration of the interfacial interaction and diffusion resulting in the formation of chemical compound layers at the interface of initial substances A and B is presented. The layer-growth kinetics is shown to be much more complicated than it follows from conventional diffusional views neglecting interfacial reactions. In the majority of multiphase binary systems, layer occurrence appears to be sequential rather than simultaneous. Under conditions of diffusion control, the number of simultaneously growing compound layers at the A–B interface cannot exceed two. Multiple layers (three and more) can only form as a result of secondary processes connected with the rupture of a diffusion couple. In such cases, great care is necessary when calculating diffusion coefficients to avoid obtaining their physically meaningless values.

scholarly journals Grain Growth Control of Dielectric and Magnetic Ceramics

Ceramist ◽  
2021 ◽  
Vol 24 (3) ◽  
pp. 260-272
Author(s):  
Kyoung-Seok Moon
Keyword(s):  
Growth Rate ◽  
Grain Growth ◽  
Driving Force ◽  
Growth Control ◽  
Interface Reaction ◽  
Ceramic Materials ◽  
Interface Energy ◽  
Diffusion Control ◽  
Interface Mobility ◽  
Interface Curvature

The sintering process transported the atoms in the materials by decreasing the total interface energy. The microstructure changes as a result of grain growth and densification under the capillary driving force due to the interface curvature among grains. The grain growth rate is expressed as the product of the interface mobility and the driving force. According to grain growth theories, the mobility of the interface governed by diffusion control is constant but interface mobility is nonlinear when the movement of an interface is governed by interface reaction. As the growth rate is nonlinear for the regime of interface reaction control, the grain growth is nonstationary with annealing time. The microstructure can be controlled by changing the growth rate of an individual grain with the correlation between the maximum driving force and the critical driving force for appreciable growth. The present paper discusses applications of the principle in the fabrication of dielectric and magnetic ceramic materials.

High-resolution EM study of the gold silicon interface reaction

1986 ◽  
Vol 44 ◽  
pp. 406-407
Author(s):  
M.J. Kim ◽  
R.W. Carpenter ◽  
J.C. Barry
Keyword(s):  
Carrier Lifetime ◽  
Interface Reaction ◽  
Native Oxide ◽  
Si Substrate ◽  
Silicon Interface ◽  
Short Times ◽  
State Device ◽  
Solid State Device ◽  
Device Technology

Gold occupies a key role in silicon solid state device technology, for contacts and carrier lifetime control. Gold is added to silicon by evaporation onto HF cleaned Si wafers, followed by annealing at high temperature. The Au-Si binary system is a simple eutectic, with very limited terminal solid solubility and no reported stable intermediate compounds. When Si wafers are HF cleaned and exposed to air, even for very short times, a native oxide film a few nm thickness will form, and be interposed between the Si substrate and the evaporated Au layer. The effect of this film on the interface reaction is of interest. Alternatively, conventional surface research on Au/Si interfaces formed by UHV in-situ cleaning, evaporation and annealing provided evidence for an amorphous Au-Si layer and metastable crystalline Au silicides at the position of the original Au/Si interface.

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