Techniques of Tracer Diffusion Measurements in Metals, Alloys and Compounds

2021 ◽  
Vol 29 ◽  
pp. 31-73
Author(s):  
Daniel Gärtner ◽  
Lisa Belkacemi ◽  
Vladimir A. Esin ◽  
François Jomard ◽  
Andrey A. Fedotov ◽  
...  

Tracer diffusion is one of most reliable techniques for providing basic kinetic data in solids. In the present review, selected direct methods, in particular the radiotracer measurements as a superior technique due to its high sensitivity, Secondary-Ion-Mass-Spectroscopy (SIMS) profiling, X-Ray Diffraction measurements and Rutherford Backscattering Spectrometry are presented and discussed. Special attention is put on the radiotracer technique describing the currently used sectioning techniques in detail with a focus on the experimental applications and complications. The relevant experimental results are exemplary shown. Furthermore, the most recent developments and advances related to the combined tracer/inter-diffusion measurements are highlighted. It is shown that this approach offers possibilities to provide the concentration-dependent tracer diffusion coefficients of the constituting elements in multi-component alloys in high-throughput experiments. Possibilities of estimating the tracer diffusion coefficients following different types of diffusion couple methods in binary and multicomponent systems are briefly introduced. Finally, specificity of SIMS analysis of diffusion in fine-grained materials are carefully analyzed. If applicable, a direct comparison of the results obtained by different techniques is given.

1994 ◽  
Vol 369 ◽  
Author(s):  
Sanjeev Aggarwal ◽  
Rudiger Dieckmann

AbstractCation diffusion in the spinel solid solution (Fe1-xTix)3-δO4 (0≤ x ≤ 0.3) was investigated at 1200 ºC as a function of oxygen activity, aO2 and cationic composition, x. At different cationic compositions, cation tracer diffusion coefficients, D*Me of Me = Fe and Ti were measured as a function of oxygen activity. Plots of log DMe vs. loga0 show V-shaped curves, indicating that different types of point defects prevail at high anc low oxygen activities. Thermogravimetric experiments were conducted, using a high resolution microbalance, to determine the deviation from stoichiometry in (Fe1-xTix)3-δO4 at 1200 °C. δversus log aO2 curves are S-shaped. An analysis of the oxygen activity dependences of thecation diffusion coefficients and the deviation from stoichiometry with regardto the point defect structure suggests that at high oxygen activities cation vacancies are the predominant defects governing the deviation from stoichiometry and the diffusion ofcations. At low oxygen activities, and at small values of x, cation interstitials determine the deviation from stoichiometry, while they dominate for 0 ≤ x ≤ 0.3 inthe cation diffusion.


2019 ◽  
Vol 21 (8) ◽  
pp. 4268-4275 ◽  
Author(s):  
Alexandra von der Heiden ◽  
Manuel Bornhöfft ◽  
Joachim Mayer ◽  
Manfred Martin

We established a TTT diagram of crystallisation of gallium oxide. Determination of oxygen tracer diffusion coefficients by IEDP/ToF-SIMS allowed us to access the activation energy for amorphous GaO1.5 at low temperatures.


1985 ◽  
Vol 51 ◽  
Author(s):  
R.G. Elliman ◽  
J.M. Poate ◽  
J.S. Williams ◽  
J.M. Gibson ◽  
D.C. Jacobson ◽  
...  

ABSTRACTDiffusion, crystallization and phase separation processes in indium implanted amorphous silicon are examined for low temperature annealing (600°C). Both diffusion and crystallization are shown to be extremely sensitive to the indium concentration. Diffusion coefficients more than 10 orders of magnitude higher than tracer diffusion coefficients in crystalline silicon are measured, and amorphous to crystalline silicon transitions at temperatures as low as 350°C are reported. Phase separation is also observed.


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