Impurity Diffusion, Crystallization And Phase Separation In Amorphous Silicon.

1985 ◽  
Vol 51 ◽  
Author(s):  
R.G. Elliman ◽  
J.M. Poate ◽  
J.S. Williams ◽  
J.M. Gibson ◽  
D.C. Jacobson ◽  
...  
Keyword(s):  
Phase Separation ◽  
Low Temperature ◽  
Amorphous Silicon ◽  
Diffusion Coefficients ◽  
Crystalline Silicon ◽  
Tracer Diffusion ◽  
Separation Processes ◽  
Low Temperature Annealing ◽  
Tracer Diffusion Coefficients ◽  
Concentration Diffusion

ABSTRACTDiffusion, crystallization and phase separation processes in indium implanted amorphous silicon are examined for low temperature annealing (600°C). Both diffusion and crystallization are shown to be extremely sensitive to the indium concentration. Diffusion coefficients more than 10 orders of magnitude higher than tracer diffusion coefficients in crystalline silicon are measured, and amorphous to crystalline silicon transitions at temperatures as low as 350°C are reported. Phase separation is also observed.

Non-Stoichiometry and Cation Tracer Diffusion Studies in the Magnetite-UlvÖSpinel Solution, (Fe,Ti)3-δO4

1994 ◽  
Vol 369 ◽  
Author(s):  
Sanjeev Aggarwal ◽  
Rudiger Dieckmann
Keyword(s):  
Diffusion Coefficients ◽  
Tracer Diffusion ◽  
Oxygen Activity ◽  
Spinel Solid Solution ◽  
Low Oxygen ◽  
Cation Diffusion ◽  
Deviation From Stoichiometry ◽  
Diffusion Studies ◽  
Tracer Diffusion Coefficients ◽  
Point Defect Structure

AbstractCation diffusion in the spinel solid solution (Fe1-xTix)3-δO4 (0≤ x ≤ 0.3) was investigated at 1200 ºC as a function of oxygen activity, aO2 and cationic composition, x. At different cationic compositions, cation tracer diffusion coefficients, D*Me of Me = Fe and Ti were measured as a function of oxygen activity. Plots of log DMe vs. loga0 show V-shaped curves, indicating that different types of point defects prevail at high anc low oxygen activities. Thermogravimetric experiments were conducted, using a high resolution microbalance, to determine the deviation from stoichiometry in (Fe1-xTix)3-δO4 at 1200 °C. δversus log aO2 curves are S-shaped. An analysis of the oxygen activity dependences of thecation diffusion coefficients and the deviation from stoichiometry with regardto the point defect structure suggests that at high oxygen activities cation vacancies are the predominant defects governing the deviation from stoichiometry and the diffusion ofcations. At low oxygen activities, and at small values of x, cation interstitials determine the deviation from stoichiometry, while they dominate for 0 ≤ x ≤ 0.3 inthe cation diffusion.

Oxygen diffusion in amorphous and partially crystalline gallium oxide

2019 ◽  
Vol 21 (8) ◽  
pp. 4268-4275 ◽  
Author(s):  
Alexandra von der Heiden ◽  
Manuel Bornhöfft ◽  
Joachim Mayer ◽  
Manfred Martin
Keyword(s):  
Activation Energy ◽  
Diffusion Coefficients ◽  
Low Temperatures ◽  
Oxygen Diffusion ◽  
Gallium Oxide ◽  
Tracer Diffusion ◽  
Tof Sims ◽  
Tracer Diffusion Coefficients ◽  
Oxygen Tracer

We established a TTT diagram of crystallisation of gallium oxide. Determination of oxygen tracer diffusion coefficients by IEDP/ToF-SIMS allowed us to access the activation energy for amorphous GaO1.5 at low temperatures.

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