RETRACTED:Influence of Fe and Al Dopants on the Optical Properties of Zinc Oxide Thin Films Obtained by Spray Pyrolysis

2017 ◽  
Vol 29 ◽  
pp. 21-27
Author(s):  
Nadjate Abdelmalek ◽  
Hichem Farh
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Optical Properties ◽  
Spray Pyrolysis ◽  
Zinc Acetate Dihydrate ◽  
Optical Transmittance ◽  
Oxide Thin Films ◽  
Photovoltaic Application ◽  
Hydrated Aluminum ◽  
Type Semiconductor

An investigation has been done to study the influence of the Fe and Al doping concentration on the optical properties of zinc oxide thin films. A spray pyrolysis system was used to obtain ZnO:M films doped with Iron and Aluminum, using zinc acetate dihydrate, hydrated iron chlorate and hydrated aluminum chlorate, respectively. The temperature and the concentration were fixed at 450°C and 0.1mol/L, respectively. Our thin films deposed on glass substrate. UV-VIS spectrophotometer has been used for the layers characterization. The optical transmittance spectra showed that the 2% Al dopand improves the optical transmittance in the visible that the Fe dopand. Zinc oxide thin films is the n type semiconductor with direct optical band gap varied between 3.219-3.346eV for obtain the films in photovoltaic application. But the urbach energy of ZnO thin films undoped and doped by Iron and Aluminum is varied between 101– 202 meV.

Structural and optical properties of Nd3+ doped zinc oxide thin films deposited by spray pyrolysis

Optik ◽  
2016 ◽  
Vol 127 (1) ◽  
pp. 72-75 ◽  
Author(s):  
T. Deepa Rani ◽  
K. Tamilarasan ◽  
K. Thangaraj ◽  
Elangovan Elamurugu ◽  
K. Ramamurthi ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Optical Properties ◽  
Spray Pyrolysis ◽  
Oxide Thin Films ◽  
Structural And Optical Properties

scholarly journals Effect of Halogen Doping on Optical Properties for ZnO Thin Film Prepared by Thermal Oxidation

2015 ◽  
Vol 61 ◽  
pp. 149-161
Author(s):  
Wael Abdullah
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Optical Properties ◽  
Thermal Oxidation ◽  
Zinc Acetate Dihydrate ◽  
Precursor Solution ◽  
Zno Thin Film ◽  
Oxide Thin Films ◽  
Glass Substrates

Undoped and halogen-doped zinc oxide thin films are prepared by the thermal oxidation process. Zinc acetate dihydrate, ethanol, and Diethanolamine are used as precursor, solvent, and stabilizer, respectively. In the case of ZnO:Hal. dopant Ammonium chloride NH4Cl 99%, Benzene Bromide C6H5Br, or Benzene Iodide C6H5I for making dopant ZnO thin film with Cl, Br, I respectively is added to the precursor solution with an atomic percentage equal to 2-10.% hal. The transparent solution sprayed onto glass substrates, and are transformed into ZnO upon annealing at 500°C. XRD spectra of ZnO thin films, and optical properties of them as a function of halogen content have been investigated using U.V spectroscopy ( transmittance , refractive index, extinction coefficient and energy band gap ) for undoped and halogen-doped zinc oxide thin films.

scholarly journals Structural and Optical Properties of Cobalt-Doped Zinc Oxide Thin Films Prepared By Spray Pyrolysis Technique

2010 ◽  
Vol 7 (1) ◽  
pp. 69-75
Author(s):  
Baghdad Science Journal
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Optical Properties ◽  
Spray Pyrolysis ◽  
Spray Pyrolysis Technique ◽  
Texture Coefficient ◽  
Hexagonal Structure ◽  
Structural And Optical Properties ◽  
Lattice Constants ◽  
Glass Substrates

Undoped and Co-doped zinc oxide (CZO) thin films have been prepared by spray pyrolysis technique using solution of zinc acetate and cobalt chloride. The effect of Co dopants on structural and optical properties has been investigated. The films were found to exhibit maximum transmittance (~90%) and low absorbance. The structural properties of the deposited films were examined by x-ray diffraction (XRD). These films, deposited on glass substrates at (400? C), have a polycrystalline texture with a wurtzite hexagonal structure, and the grain size was decreased with increasing Co concentration, and no change was observed in lattice constants while the optical band gap decreased from (3.18-3.02) eV for direct allowed transition. Other parameters such as Texture Coefficient (Tc), dislocation density (?) and number of crystals (M) were also calculated .

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