Self-Assembled ZnO Nanostructure for Field-Emission Devices

Zinc oxide (ZnO) nanorods on Au patterned Si substrates were fabricated using vapor transport method. The XRD pattern showed the ZnO nanorods were highly c-axis oriented similar to ZnO thin films. The photoluminescence spectrum at 77 K of ZnO nanorods was consisting of the fundamental near band edge emission of ZnO in the UV region along with a broad defect induced emission around green band. The field emission properties of the nanorods showed a current density of 1mA/cm2 at an applied field of 10V/m, which is comparable to other reported values of ZnO nanorods. The patterned gold island formed by self-assembly of polystyrene ball on Si substrate acted as a catalyst in the growth of nanorods as well as stable ohmic contact for field emission.

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Field Emission Properties of ZnO Nanorods Synthesized by Aqueous Solutions

Materials Science Forum ◽

10.4028/www.scientific.net/msf.663-665.33 ◽

2010 ◽

Vol 663-665 ◽

pp. 33-36

Author(s):

Bo Gao ◽

Hai Ming Zhang ◽

Yan Jun Zhu ◽

Yu Jie Li ◽

Guo Feng Hu

Keyword(s):

Aqueous Solutions ◽

Field Emission ◽

Zno Nanorods ◽

Threshold Field ◽

X Ray Diffraction ◽

Xrd Pattern ◽

X Ray ◽

Field Emission Properties ◽

Turn On ◽

Structure Properties

In this paper, we introduce a simple and effective method to prepare ZnO nanorods using aqueous solutions. The morphology and structure properties of ZnO nanorods were investigated using scanning electron microscopy (SEM), X-ray diffraction (XRD) and photoluminescence (PL). The SEM results indicated that the diameter of ZnO nanoroads was about 100 nm. The XRD pattern showed that the ZnO nanorods had high-purity wuruzite structure. The PL spectrum revealed that ZnO nanorods had a strong visible emission at 423 nm. The field emission (FE) properties of ZnO nanorods were also studied. The FE results showed that the turn-on field and threshold field were 24V/μm and 39V/μm, respectively.

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Enhanced field emission properties of ZnO nanorods by surface modification

RSC Advances ◽

10.1039/c5ra11392j ◽

2015 ◽

Vol 5 (96) ◽

pp. 78502-78507 ◽

Cited By ~ 13

Author(s):

Zhixiang Ye ◽

Xiaohong Ji ◽

Qinyuan Zhang

Keyword(s):

Surface Modification ◽

Vapor Phase ◽

Zno Nanorods ◽

Vapor Phase Transport ◽

Field Emission Properties ◽

Si Substrates ◽

Modification Process ◽

Vapor Phase Transport Method ◽

Phase Transport ◽

Transport Method

ZnO nanorods on Si substrates were synthesized by a simple vapor phase transport method, and FE property of these ZnO nanorods was improved by a two-step surface modification process.

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Enhanced near-band-edge emission and field emission properties from plasma treated ZnO nanowires

Applied Physics A ◽

10.1007/s00339-010-5636-x ◽

2010 ◽

Vol 100 (1) ◽

pp. 165-170 ◽

Cited By ~ 14

Author(s):

Qing Zhao ◽

Tuocheng Cai ◽

Sheng Wang ◽

Rui Zhu ◽

Zhimin Liao ◽

...

Keyword(s):

Field Emission ◽

Zno Nanowires ◽

Band Edge ◽

Near Band Edge Emission ◽

Near Band Edge ◽

Band Edge Emission ◽

Edge Emission ◽

Emission Properties ◽

Field Emission Properties

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Influence of synthesis temperature on ZnO nanostructure morphologies and field emission properties

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2008.09.006 ◽

2009 ◽

Vol 41 (3) ◽

pp. 470-473 ◽

Cited By ~ 14

Author(s):

Kai Hou ◽

Chi Li ◽

Wei Lei ◽

Xiaobing Zhang ◽

Xiaxi Yang ◽

...

Keyword(s):

Field Emission ◽

Synthesis Temperature ◽

Emission Properties ◽

Field Emission Properties ◽

Zno Nanostructure

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Effects of Residual Gas Exposure on the Field Emission Properties of ZnO Nanorods

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2011.3759 ◽

2011 ◽

Vol 11 (4) ◽

pp. 3630-3634 ◽

Cited By ~ 1

Author(s):

Y. Mo ◽

J. D. Jones ◽

A. Neogi ◽

Y. Fujita ◽

J. M. Perez

Keyword(s):

Field Emission ◽

Zno Nanorods ◽

Emission Properties ◽

Field Emission Properties ◽

Residual Gas ◽

Gas Exposure

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Photoluminescence and Raman Studies of Annealed ZnO Nanostructures

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.501.179 ◽

2012 ◽

Vol 501 ◽

pp. 179-183 ◽

Cited By ~ 1

Author(s):

Siti Khadijah Mohd Bakhori ◽

Chuo Ann Ling ◽

Shahrom Mahmud

Keyword(s):

Optical Signal ◽

High Mode ◽

Raman Shift ◽

Near Band Edge ◽

Band Edge Emission ◽

Zno Nanostructures ◽

Zno Nanostructure ◽

Band Emission ◽

Crystallite Sizes ◽

Tem Microscopy

The influence of annealing on the optical properties of as-grown ZnO nanostructures prepared in pellets has been investigated by photoluminescence (PL) and Raman spectroscopy. The annealing temperatures of ZnO nanostructure at 600°C, 650°C and 700 °C were conducted in oxygen (O2) and nitrogen (N2) ambient. The near band edge emission (NBE) of samples recorded in the PL spectra demonstrates significant changes on optical signal whereby the NBE is redshifted after O2 annealed and became slightly higher in N2 annealed. Apart from that, weak green luminescence (GL) namely deep band emission (DBE) is observed centre at 532.95 nm (2.23 eV) and 511.00 nm (2.42 eV) for annealed in O2 and N2 respectively, whereas lower DBE observed in as-grown ZnO. On the other hand, Raman shift reveal the phonon mode of the ZnO nanostructures and the E2 (high) mode were downshifted as annealed in O2 ambient, and upshifted in N2 ambient. The downshift and upshift of the E2 (high) mode are correlated to tensile and compressive stress. Moreover the crystallite sizes were calculated from FWHM of XRD and TEM microscopy reveals the nanoplates structure of ZnO nanostructures.

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Optimization of the CVD parameters for ZnO nanorods growth: Its photoluminescence and field emission properties

Materials Research Bulletin ◽

10.1016/j.materresbull.2018.05.002 ◽

2018 ◽

Vol 105 ◽

pp. 237-245 ◽

Cited By ~ 13

Author(s):

Sudhisht Kumar ◽

P.D. Sahare ◽

Surender Kumar

Keyword(s):

Field Emission ◽

Zno Nanorods ◽

Emission Properties ◽

Field Emission Properties

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Modulation of field emission properties of vertically aligned ZnO nanorods with aspect ratio and number density

Applied Surface Science ◽

10.1016/j.apsusc.2008.12.033 ◽

2009 ◽

Vol 255 (9) ◽

pp. 4902-4906 ◽

Cited By ~ 20

Author(s):

R.N. Gayen ◽

S. Dalui ◽

A. Rajaram ◽

A.K. Pal

Keyword(s):

Aspect Ratio ◽

Field Emission ◽

Zno Nanorods ◽

Number Density ◽

Emission Properties ◽

Field Emission Properties ◽

Vertically Aligned

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Chemical Vapor Deposition of Porous GaN Particles on Silicon

Microscopy and Microanalysis ◽

10.1017/s1431927612001134 ◽

2012 ◽

Vol 18 (4) ◽

pp. 905-911 ◽

Cited By ~ 11

Author(s):

Joan J. Carvajal ◽

Oleksandr V. Bilousov ◽

Dominique Drouin ◽

Magdalena Aguiló ◽

Francesc Díaz ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Band Edge ◽

Near Band Edge ◽

Band Edge Emission ◽

Edge Emission ◽

Si Substrates ◽

Internal Morphology ◽

Simple Chemical

AbstractWe present a technique for the direct deposition of nanoporous GaN particles on Si substrates without requiring any post-growth treatment. The internal morphology of the nanoporous GaN particles deposited on Si substrates by using a simple chemical vapor deposition approach was investigated, and straight nanopores with diameters ranging between 50 and 100 nm were observed. Cathodoluminescence characterization revealed a sharp and well-defined near band-edge emission at ∼365 nm. This approach simplifies other methods used for this purpose, such as etching and corrosion techniques that can damage the semiconductor structure and modify its properties.

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