Chemical Vapor Deposition of Porous GaN Particles on Silicon

2012 ◽  
Vol 18 (4) ◽  
pp. 905-911 ◽  
Author(s):  
Joan J. Carvajal ◽  
Oleksandr V. Bilousov ◽  
Dominique Drouin ◽  
Magdalena Aguiló ◽  
Francesc Díaz ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Band Edge ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Edge Emission ◽  
Si Substrates ◽  
Internal Morphology ◽  
Simple Chemical

AbstractWe present a technique for the direct deposition of nanoporous GaN particles on Si substrates without requiring any post-growth treatment. The internal morphology of the nanoporous GaN particles deposited on Si substrates by using a simple chemical vapor deposition approach was investigated, and straight nanopores with diameters ranging between 50 and 100 nm were observed. Cathodoluminescence characterization revealed a sharp and well-defined near band-edge emission at ∼365 nm. This approach simplifies other methods used for this purpose, such as etching and corrosion techniques that can damage the semiconductor structure and modify its properties.

Nitride-Rich Hexagonal GaNP Growth Using Metalorganic Chemical Vapor Deposition

2000 ◽  
Vol 639 ◽  
Author(s):  
Seikoh Yoshida ◽  
Yoshiteru Itoh ◽  
Junjiroh Kikawa
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Light Emitting Diode ◽  
Chemical Vapor ◽  
Band Edge ◽  
Band Edge Emission ◽  
Edge Emission ◽  
Different Temperatures ◽  
Metalorganic Chemical

ABSTRACTThe growth of GaNP using laser-assisted metalorganic chemical vapor deposition (LA-MOCVD) was carried out for the fabrication of a light-emitting diode (LED). We used an Ar-F laser in order to decompose the source gases at lower temperatures. Trimethylgallium (TMG), ammonia (NH3) and tertialybuthylphosphine (TBP) were used for the growth. GaNP growth was carried out at different temperatures. After that, annealing was carried out at 1273-1373 K to improve the crystal quality.As a result, N-rich GaNP could be grown at 1123-1223 K. The surface morphologies of GaNP were improved when the growth temperature was increased to above 1173 K. We investigated the photoluminescence (PL) of GaNP. The band-edge emission of GaNP was observed at 77 K upon applying thermal annealing at 1323 K. This peak shifted to about 0.2 eV compared with the GaN band-edge emission. Furthermore, a GaNP LED was fabricated and the electoluminescence spectra were investigated. The band-edge emission at 420 nm was observed.

scholarly journals Room Temperature Ferromagnetism of (Mn,Fe) Codoped ZnO Nanowires Synthesized by Chemical Vapor Deposition

2011 ◽  
Vol 2011 ◽  
pp. 1-6 ◽  
Author(s):  
Yongqin Chang ◽  
Pengwei Wang ◽  
Qingling Sun ◽  
Yongwei Wang ◽  
Yi Long
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Magnetic Hysteresis ◽  
Chemical Vapor ◽  
Zno Nanowires ◽  
Hysteresis Curve ◽  
Chemical Vapor Deposition Method ◽  
Near Band Edge ◽  
Band Edge Emission

(Mn,Fe) codoped ZnO nanowires were synthesized on silicon substrates in situ using a chemical vapor deposition method. The structure and property of the products were investigated by X-ray, electron microscopy, Raman, photoluminescence, and superconducting quantum interference device magnetometer. The doped nanowires are of pure wurtzite phase with single crystalline, and the elements distribute homogeneously in the doped nanowires. Photoluminescence spectrum of the doped nanowires is dominated by a deep-level emission with a negligible near-band-edge emission. The magnetic hysteresis curve with a coercive field of 35 Oe is clearly observed at 300 K, resulting from room-temperature ferromagnetic ordering in the (Mn,Fe) codoped ZnO nanowires, which has great potential applications for spintronics devices.

Growth and Characterization of GaN Thin Films on Si(111) Substrates Using SiC Intermediate Layer

1999 ◽  
Vol 595 ◽  
Author(s):  
K. Y. Lim ◽  
K. J. Lee ◽  
C. I. Park ◽  
K.C. Kim ◽  
S. C. Choi ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Buffer Layer ◽  
Vapor Deposition ◽  
Intermediate Layer ◽  
Chemical Vapor ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gan Buffer Layer

AbstractGaN films have been grown atop Si-terminated 3C-SiC intermediate layer on Si(111) substrates using low pressure metalorganic chemical vapor deposition (LP-MOCVD). The SiC intermediate layer was grown by chemical vapor deposition (CVD) using tetramethylsilane (TMS) as the single source precursor. The Si terminated SiC surface was obtained by immediately flow of SiH4 gas after growth of SiC film. LP-MOCVD growth of GaN on 3C-SiC/Si(111) was carried out with trimethylgallium (TMG) and NH3. Single crystalline hexagonal GaN layers can be grown on Si terminated SiC intermediate layer using an AlN or GaN buffer layer. Compared with GaN layers grown using a GaN buffer layer, the crystal qualities of GaN films with AlN buffer layers are extremely improved. The GaN films were characterized by x-ray diffraction (XRD), photoluminescence (PL) and scanning electron microscopy (SEM). Full width at half maximum (FWHM) of double crystal x-ray diffraction (DCXD) rocking curve for GaN (0002) on 3C-SiC/Si(111) was 890 arcsec. PL near band edge emission peak position and FWHM at room temperature are 3.38 eV and 79.35 meV, respectively.

Photoreflectance study of the near-band-edge transitions of chemical vapor deposition-grown mono- and few-layer MoS2 films

2016 ◽  
Vol 119 (11) ◽  
pp. 115703 ◽  
Author(s):  
Kuang-I Lin ◽  
Yen-Jen Chen ◽  
Bo-Yan Wang ◽  
Yung-Chen Cheng ◽  
Chang-Hsiao Chen
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Band Edge ◽  
Near Band Edge

scholarly journals Barrier-assisted vapor phase CVD of large-area MoS2 monolayers with high spatial homogeneity

2020 ◽  
Vol 2 (9) ◽  
pp. 4106-4116
Author(s):  
Santhosh Durairaj ◽  
P. Krishnamoorthy ◽  
Navanya Raveendran ◽  
Beo Deul Ryu ◽  
Chang-Hee Hong ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Band Edge Emission ◽  
Large Area ◽  
Edge Emission ◽  
Spatial Homogeneity ◽  
Mos2 Monolayers ◽  
Phase Chemical

Vapor phase chemical vapor deposition of large-area homogeneous MoS2 monolayers with strong band-edge emission due to oxygen bonding at sulphur vacancies is demonstrated.

Pendeo-Epitaxial Growth of GaN on SiC and Silicon Substrates via Metalorganic Chemical Vapor Deposition

1999 ◽  
Vol 572 ◽  
Author(s):  
K. J. Linthicum ◽  
T. Gehrke ◽  
D. Thomson ◽  
C. Ronning ◽  
E. P. Carlson ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Silicon Substrates ◽  
Lateral Growth ◽  
X Ray Diffraction ◽  
Edge Emission ◽  
X Ray ◽  
Si Substrates ◽  
Crystallographic Tilt

ABSTRACTPendeo-epitaxial lateral growth (PE) of GaN epilayers on (0001) 6H-silicon carbide and (011) Si substrates has been achieved. Growth on the latter substrate was accomplished through the use of a 3C-SiC transition layer. The coalesced PE GaN epilayers were characterized using scanning electron diffraction, x-ray diffraction and photoluminescence spectroscopy. The regions of lateral growth exhibited ∼0.2° crystallographic tilt relative to the seed layer. The GaN seed and PE epilayers grown on the 3C-SiC/Si substrates exhibited comparable optical characteristics to the GaN seed and PE grown on 6H-SiC substrates. The near band-edge emission of the GaN/3C-SiC/Si seed was 3.450 eV (FWHM ∼ 19 meV) and the GaN/6H-SiC seed was 3.466 eV (FWHM ∼ 4 meV).

Synthesis of greenish phosphorus on carbon substrate

2021 ◽  
Author(s):  
Haipeng Wang ◽  
Cheng Liu ◽  
HuiLi Wang ◽  
Xinpeng Han ◽  
Shaojie Zhang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Formation Mechanism ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Carbon Substrate ◽  
Deposition Method ◽  
Critical Factors ◽  
Simple Chemical

One of the phosphorus allotropes called greenish phosphorus was successfully synthesized by simple chemical vapor deposition method. We revealed that the critical factors in the formation mechanism of greenish phosphorus...

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