Solar Cells from Thin Silicon Layers on AlN
2007 ◽
Vol 280-283
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pp. 1161-1162
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Keyword(s):
Polycrystalline silicon layers were grown on AlN ceramic substrates in a rapid thermal chemical vapor deposition system at high temperature (~1150°C). Larger columnar grains, > 5µm in size, were obtained by the zone melting recrystallization (ZMR) technique. The p-n junction is formed by a phosphorous diffusion process to make a solar cell. Solar cell devices based on this Si layer result possess an open-circuit voltage of about 0.17V and a short-circuit current of about 6.6mA/cm2.
Keyword(s):
Keyword(s):
2014 ◽
Vol 633-634
◽
pp. 509-512
2014 ◽
Vol 1070-1072
◽
pp. 616-619
2011 ◽
Vol 347-353
◽
pp. 3666-3669
Keyword(s):
2012 ◽
Vol 260-261
◽
pp. 154-162