Two-Dimensional Modelling and Simulation of Crystalline Silicon n+pp+ Solar Cell

2012 ◽  
Vol 260-261 ◽  
pp. 154-162
Author(s):  
S. Tobbeche ◽  
M.N. Kateb
Keyword(s):  
Solar Cell ◽  
Open Circuit Voltage ◽  
Crystalline Silicon ◽  
Spectral Response ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
The Other ◽  
Electrical Characteristics

In this work, we present the simulation results of the technological parameters and the electrical characteristics of a crystalline silicon n+pp+ solar cell, using two-dimension (2D) software, namely TCAD Silvaco (Technology Computer Aided Design). TCAD Silvaco Athena is used to simulate various stages of the technology manufacturing, while TCAD Silvaco Atlas is used for the simulation of the electrical characteristics and the spectral response of the solar cell. The J-V characteristics and the external quantum efficiency (EQE) are simulated under AM 1.5 illumination. The conversion efficiency(η)of 16.06% is reached and the other characteristic parameters are simulated: the open circuit voltage (Voc) is of 0.63 V, the short circuit current density (Jsc) equals 30.54 mA/cm² and the form factor (FF) is of 0.83 for the n+pp+ solar cell with a silicon nitride antireflection layer (Si3N4). In order to highlight the importance of the back surface field (BSF), a comparison between two cells, one without BSF (structure n+p), the other with one BSF (structure n+pp+), was made. By creating a BSF on the rear face of the cell the short circuit current density increases from 28.55 to 30.54 mA/cm2, the open circuit voltage from 0.6 to 0.63 V and the conversion efficiency from 14.19 to 16.06%. A clear improvement of the spectral response is obtained in wavelengths ranging from 0.65 to 1.1 µm for the solar cell with BSF.

Design and modeling of an SJ infrared solar cell approaching upper limit of theoretical efficiency

2018 ◽  
Vol 32 (02) ◽  
pp. 1850014 ◽  
Author(s):  
G. S. Sahoo ◽  
G. P. Mishra
Keyword(s):  
Solar Cell ◽  
Quantum Efficiency ◽  
Conversion Efficiency ◽  
Internal Quantum Efficiency ◽  
Spectral Response ◽  
Short Circuit ◽  
Cost Effective ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit

Recent trends of photovoltaics account for the conversion efficiency limit making them more cost effective. To achieve this we have to leave the golden era of silicon cell and make a path towards III–V compound semiconductor groups to take advantages like bandgap engineering by alloying these compounds. In this work we have used a low bandgap GaSb material and designed a single junction (SJ) cell with a conversion efficiency of 32.98%. SILVACO ATLAS TCAD simulator has been used to simulate the proposed model using both Ray Tracing and Transfer Matrix Method (under 1 sun and 1000 sun of AM1.5G spectrum). A detailed analyses of photogeneration rate, spectral response, potential developed, external quantum efficiency (EQE), internal quantum efficiency (IQE), short-circuit current density (J[Formula: see text]), open-circuit voltage (V[Formula: see text]), fill factor (FF) and conversion efficiency ([Formula: see text]) are discussed. The obtained results are compared with previously reported SJ solar cell reports.

Photogeneration and Carrier Transport in Amorphous Silicon/Crystalline Silicon Devices

1997 ◽  
Vol 467 ◽  
Author(s):  
B. Jagannathan ◽  
W. A. Anderson
Keyword(s):  
Amorphous Silicon ◽  
Carrier Transport ◽  
Crystalline Silicon ◽  
Plasma Deposition ◽  
Spectral Response ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Silicon Devices

ABSTRACTHydrogenated amorphous silicon (a-Si:H)/ crystalline silicon (c-Si) type heterodiodes in solar cell structures have been studied by rf glow discharge, dc magnetron sputtering, and a remote plasma deposition of a-Si:H onto p type c-Si. Carrier transport and photogeneration in such structures have been investigated by current-voltage-temperature, thermally stimulated capacitance (TSCAP), and spectral response experiments. Dark carrier conduction is found to be a combination of tunneling and interface recombination, but is dominated by either one depending on the deposition/sputtering conditions. The conditions investigated include energy of the plasma species, type of plasma cleaning, and substrate preparation techniques. For each of the conditions, the trap type, energy and concentration have been identified by TSCAP. Solar cells fabricated by the optimized fabrication scheme routinely yield 10.5% efficient devices having a short circuit current density (Jsc) of 30 mA/cm2, a open circuit voltage of 0.55 volts and a fill factor (FF) of 0.64, without an AR coating, over 0.3 cm2 area.

Effect of Assets of Silicon Film Passivation Layer on the Performance of Silicon Nanowire Solar Cells

2014 ◽  
Vol 633-634 ◽  
pp. 509-512
Author(s):  
Ping Yang ◽  
Xiang Bo Zeng ◽  
Xiao Dong Zhang ◽  
Zhan Guo Wang
Keyword(s):  
Solar Cell ◽  
Current Density ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Silicon Film ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Passivation Layer ◽  
Hydrogen Dilution

Silicon film as a surface passivation layer is reported to reduce surface recombination on silicon nanowires (SiNWs) and thus enable to improve SiNW solar cell (SC) performance. A question yet to be answered regards the link between the silicon film assets and the solar cell performances. We investigated the effect of the properties of silicon films on the SiNWs SC performances by adjusting hydrogen dilution. Our results showed that the open-circuit voltage (Voc) and short-circuit current density (Jsc) of SiNWs SC increase until hydrogen dilution 10 and then decrease. An open-circuit voltage of 0.397 V and short-circuit current density of 18.42 mA/cm2 are achieved at optimized hydrogen dilution. Based on the analysis of silicon film properties we proposed that the increase of defect density with hydrogen dilution was the main cause for the deterioration of SiNWs SC performance.

Preparation of Narrow-gap a-Si:H Solar Cells by VHF-PECVD Technique

2010 ◽  
Vol 1245 ◽  
Author(s):  
Do Yun Kim ◽  
Ihsanul Afdi Yunaz ◽  
Shunsuke Kasashima ◽  
Shinsuke Miyajima ◽  
Makoto Konagai
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Solar Cell ◽  
Spectral Response ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Hydrogen Flow ◽  
Long Wavelength

AbstractOptical, electrical and structural properties of silicon films depending on hydrogen flow rate (RH), substrate temperature (TS), and deposition pressure (PD) were investigated. By decreasing RH and increasing TS and PD, the optical band gap (Eopt) of silicon thin films drastically declined from 1.8 to 1.63 eV without a big deterioration in electrical properties. We employed all the investigated Si thin films for p-i-n structured solar cells as absorbers with i-layer thickness of 300 nm. From the measurement of solar cell performances, it was clearly observed that spectral response in long wavelength was enhanced as Eopt of absorber layers decreased. Using the solar cell whose Eopt of i-layer was 1.65 eV, the highest QE at long wavelength with the short circuit current density (Jsc) of 16.34 mA/cm2 was achieved, and open circuit voltage (Voc), fill factor (FF), and conversion efficiency (η) were 0.66 V, 0.57, and 6.13%, respectively.

A Study on Optical and Electrical Properties of Solar Cells of a-Si1-XGeX:H

2011 ◽  
Vol 347-353 ◽  
pp. 3666-3669
Author(s):  
Ming Biao Li ◽  
Li Bin Shi
Keyword(s):  
Solar Cell ◽  
Electrical Properties ◽  
Conversion Efficiency ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Optical And Electrical Properties

The AMPS-ID program is used to investigate optical and electrical properties of the solar cell of a-SiC:H/a-Si1-xGex:H/a-Si:H thin films. The short circuit current density, open circuit voltage, fill factor and conversion efficiency of the solar cell are investigated. For x=0.1, the conversion efficiency of the solar cell achieve maximum 9.19 % at the a-Si1-xGex:H thickness of 340 nm.

scholarly journals Simulation and Numerical Modelling of CIGSSe-Based Solar Cells by AFORS-HET

2021 ◽  
Vol 2114 (1) ◽  
pp. 012075
Author(s):  
Ammar J. Aswad ◽  
Nadeem K. Hassan ◽  
Adnan R. Ahmed
Keyword(s):  
Solar Cell ◽  
Buffer Layer ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Energy Conversion Efficiency ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Window Layer ◽  
Absorption Layer

Abstract A general equation to determine properties of penternary solar cell based on Cu (In, Ga) (Se, S) 2 (CIGSSe) with a double buffer layer ZnS/Zn0.8Mg0.2O(ZMO) were derived. Numerical analysis of a (CIGSSe) solar cell with a double buffer layer ZnS/ZMO, CdS free absorber layer, were investigated using the AFORS-HET software simulation. Taking into consideration the effect of thickness and doping concentration for the CIGSSe absorption layer, ZnS buffer layer and ZnO:B(BZO) window layer on the electron transport, short circuit current density (Jsc) and open circuit voltage (Voc); numerical simulation demonstrated that the changes in band structure characteristics occurred. The solar energy conversion efficiency is 28.34%, the filling factor is 85.59%, the open circuit voltage is 782.3 mV, the short circuit current is 42.32 mA. then we take the range of the gradient between the ratio of x and y for the absorption layer, and the best result of Voc, Jsc, FF, Eff equal (838.7 mV, 40.94 mA/cm2, 86.23%, 29.61%) respectively at x= 0, y= 0.26.

scholarly journals A High Efficiency Chlorophyll Sensitized Solar Cell with Quasi Solid PVA Based Electrolyte

2016 ◽  
Vol 2016 ◽  
pp. 1-9 ◽  
Author(s):  
H. C. Hassan ◽  
Z. H. Z. Abidin ◽  
F. I. Chowdhury ◽  
A. K. Arof
Keyword(s):  
Solar Cell ◽  
Fill Factor ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Double Salt ◽  
Sensitized Solar Cells

The objective of this work is to investigate the performance of chlorophyll sensitized solar cells (CSSCs) with gel electrolyte based on polyvinyl alcohol (PVA) with single iodide salt (potassium iodide (KI)) and double salt (KI and tetrapropylammonium iodide (TPAI)). Chlorophyll was extracted from the bryophyteHyophila involuta. The CSSC with electrolyte containing only KI salt produced a short circuit current density (Jsc) of 4.59 mA cm−2, open circuit voltage (Voc) of 0.61 V, fill factor (FF) of 0.64, and efficiency (η) of 1.77%. However, the CSSC with double salt electrolyte exhibitedJscof 5.96 mA cm−2,Vocof 0.58 V, fill factor FF of 0.58, andηof 2.00%. Since CSSC with double salt electrolyte showed better efficiency, other cells fabricated will use the double salt electrolyte. On addition of 0.7 M tetrabutyl pyridine (TBP) to the double salt electrolyte, the cell’s efficiency increased to 2.17%,Jsc=5.37 mA cm−2,Voc=0.55 V, and FF = 0.73. With 5 mM chenodeoxycholic acid (CDCA) added to the chlorophyll, the light to electricity efficiency increased to 2.62% withJscof 8.44 mA cm−2,Vocof 0.54 V, and FF of 0.58.

Porous Silicon Antireflection Coating for Solar Cells Using Chemical Etching in HF-FeCl3-H2O

2016 ◽  
Vol 22 ◽  
pp. 1-6 ◽  
Author(s):  
Rachid Chaoui ◽  
Bedra Mahmoudi ◽  
Yasmine Si Ahmed
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Current Density ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Relative Improvement ◽  
Cell Conversion

Stain etching of silicon solar cells in HF-FeCl3-H2O solutions as a last step in the processing sequence is reported. The etching was carried out without protecting the screen printed contacts. Following optimization of the solution composition and using very short etching times to alleviate the contact degradation problem, the solar cell weighted reflectance (Rw) between 400 and 1100 nm could be reduced from 38.23% to 11.54%. For the best small area cell (~20 cm2), the PS antireflective layer led to a relative improvement of 62.74% in the short-circuit current density, the FF was enhanced by 5.5% absolute, the open-circuit voltage was increased by 1.2 mV and the cell conversion efficiency was raised by 4.1% absolute from 5.4% to 9.5%. The best large area cell (~78 cm2) shows the following changes after porous layer formation: a relative improvement of 45.43% in the short-circuit current density, an improvement in the FF of 7.4% absolute, an increase in the open-circuit voltage by 7.5 mV and an enhancement in the cell efficiency by 4.0% absolute from 6.2% to 10.2%. This method shows a great potential for the cost-effective reduction of reflectance losses in industrial silicon solar cell manufacturing.

scholarly journals CdTe-Based Thin Film Solar Cells: Past, Present and Future

Energies ◽  
2021 ◽  
Vol 14 (6) ◽  
pp. 1684
Author(s):  
Alessandro Romeo ◽  
Elisa Artegiani
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Early Years ◽  
Solar Cell Efficiency ◽  
Cell Efficiency

CdTe is a very robust and chemically stable material and for this reason its related solar cell thin film photovoltaic technology is now the only thin film technology in the first 10 top producers in the world. CdTe has an optimum band gap for the Schockley-Queisser limit and could deliver very high efficiencies as single junction device of more than 32%, with an open circuit voltage of 1 V and a short circuit current density exceeding 30 mA/cm2. CdTe solar cells were introduced at the beginning of the 70s and they have been studied and implemented particularly in the last 30 years. The strong improvement in efficiency in the last 5 years was obtained by a new redesign of the CdTe solar cell device reaching a single solar cell efficiency of 22.1% and a module efficiency of 19%. In this paper we describe the fabrication process following the history of the solar cell as it was developed in the early years up to the latest development and changes. Moreover the paper also presents future possible alternative absorbers and discusses the only apparently controversial environmental impacts of this fantastic technology.

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