Intelligent Profile Measurement for Wide-Area Resist Surface Using Multi-Sensor AFM System

2008 ◽  
Vol 381-382 ◽  
pp. 407-410
Author(s):  
Shu Jie Liu ◽  
K. Watanabe ◽  
Satoru Takahashi ◽  
Kiyoshi Takamasu

In the semiconductor industry, a device that can measure the surface-profile of photoresist is needed. Since the photoresist surface is very smooth and deformable, the device is required to measure vertical direction with nanometer resolution and not to damage it at the measurement. We developed the apparatus using multi-cantilever and white light interferometer to measure the surface-profile of thin film. But, this system with scanning method suffers from the presence of moving stage and systematic sensor errors. So, in this paper, an error separation approach used coupled distance sensors, together with an autocollimator as an additional angle measuring device, was consulted the potentiality for self-calibration of multi-cantilever. Then, according to this method, we constructed the experimental apparatus and do the measurement on the resist film. The results demonstrated the feasibility that the constructed multi-ball-cantilever AFM system combined with an autocollimator could measure the thin film with high accuracy.

2010 ◽  
Vol 447-448 ◽  
pp. 544-548
Author(s):  
Masashi Ono ◽  
Kazutaka Nonomura ◽  
Li Bo Zhou ◽  
Jun Shimizu

Recently in semiconductor industry, production of ever flatter, thinner and larger silicon wafers are required to fulfill the demands of high-density packaging and cost reduction. In geometric evaluation of Si wafers, according to SEMI (Semiconductor Equipment and Materials International) standards, the required wafer flatness approaches to the 22 nanometers by year 2016 [1]. For such application, uncertainty of measured data is encountered as a severe problem because high resolution instrument always incorporate a certain degree of noise. In order to precisely evaluate the wafer profile, it is essential to remove the noise from the measured data. Described in this paper is design and development of digital filters for denoising. Compared to the conventional low-pass filters, the developed filter by use of wavelet transform not only provides better performance of decomposition in the spatial frequency domain, but also offers the new capability of denoising in amplitude domain.


2010 ◽  
Vol 126-128 ◽  
pp. 732-737 ◽  
Author(s):  
Kazutaka Nonomura ◽  
Masashi Ono ◽  
Li Bo Zhou ◽  
Jun Shimizu ◽  
Hirotaka Ojima

Recently in semiconductor industry, production of ever flatter, thinner and larger silicon wafers are required to fulfill the demands of high-density packaging and cost reduction. In geometric evaluation of Si wafers, according to SEMI (Semiconductor Equipment and Materials International) standards, the required wafer flatness approaches to the 22 nanometers by year 2016 [1]. For such application, uncertainty of measured data is encountered as a severe problem because the requirement has met the limit of available instrument in terms of resolution and reliability. In order to precisely evaluate the wafer profile, it is essential to remove the noise from the measured data. Described in this paper is design and development of digital filters for denoising. In previous paper, digital filters for denoising with Haar wavelet transform are described. In this paper, the new filters by use of 2nd generation wavelet transform (lifting scheme) are proposed and show better performance of decomposition in the spatial frequency domain and amplitude domain.


2020 ◽  
pp. 8-13
Author(s):  
Oleg M. Oreshkin ◽  
Viacheslav A. Khloponin ◽  
Daniil V. Panov ◽  
Denis V. Ushakov

To increase the efficiency of laser destructuring, data on the waviness of the part associated with the coordinate system of the laser processing machine are required. At present, there are no non-contact profile measurement systems on the market that meet all the requirements that apply to a system for measuring the surface profile of parts and are determined by the parameters of the laser destructuring. The developed measurement system will allow to take waviness measurement directly at the laser processing machine, which will significantly reduce the complexity of the process. A prototype of a system for measuring the surface profile (waviness) has been created inaccordance with the measurement requirements for a laser processing machine. The scheme and principle of operation of the system for measuring the waviness of the installation for laser destructuring are described. In measurements, the triangulation method was used. A prototype allows to measure the profile of the of the surface waviness with a spatial wavelength of 2 mm with an accuracy of 3,78 μm in the vertical direction and 13,8 μm in the lateral direction. The accuracy of the prototype was verified using the standard method of stylus profilometry. The waviness profile obtained with a developed system can be used to modulate the amplitude of the laser radiation power in the laser destructuring.


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