Schottky diode temperature sensor for pressure sensor

The small silicon chip of Schottky diode (0.8x0.8x0.4 mm³) with planar arrangement of electrodes (chip PSD) as temperature sensor, which functions under the operating conditions of pressure sensor, was developed. The forward I-V characteristic of chip PSD is determined by potential barrier between Mo and n-Si (N_D = 3 × 10¹⁵ cm^-3). Forward voltage U_F = 208 ± 6 mV and temperature coefficient TC = -1.635 ± 0.015 mV/⁰C (with linearity k_T <0.4% for temperature range of -65 to +85 ⁰C) at supply current I_F = 1 mA is achieved. The reverse I-V characteristic has high breakdown voltage U_BR > 85 V and low leakage current I_L < 5 μA at 25 ⁰C and I_L < 130 μA at 85 ⁰C (U_R = 20 V) because chip PSD contains the structure of two p-type guard rings along the anode perimeter. The application of PSD chip for wider temperature range from -65 to +115 ⁰C is proved. The separate chip PSD of temperature sensor located at a distance of less than 1.5 mm from the pressure sensor chip. The PSD chip transmits input data for temperature compensation of pressure sensor errors by ASIC and for direct temperature measurement.

Schottky diode temperature sensor for pressure sensor

The small silicon chip of Schottky diode (0.8x0.8x0.4 mm³) with planar arrangement of electrodes (chip PSD) as temperature sensor, which functions under the operating conditions of pressure sensor, was developed. The forward I-V characteristic of chip PSD is determined by potential barrier between Mo and n-Si (N_D = 3 × 10¹⁵ cm^-3). Forward voltage U_F = 208 ± 6 mV and temperature coefficient TC = -1.635 ± 0.015 mV/⁰C (with linearity k_T <0.4% for temperature range of -65 to +85 ⁰C) at supply current I_F = 1 mA is achieved. The reverse I-V characteristic has high breakdown voltage U_BR > 85 V and low leakage current I_L < 5 μA at 25 ⁰C and I_L < 130 μA at 85 ⁰C (U_R = 20 V) because chip PSD contains the structure of two p-type guard rings along the anode perimeter. The application of PSD chip for wider temperature range from -65 to +115 ⁰C is proved. The separate chip PSD of temperature sensor located at a distance of less than 1.5 mm from the pressure sensor chip. The PSD chip transmits input data for temperature compensation of pressure sensor errors by ASIC and for direct temperature measurement.

Schottky diode temperature sensor for pressure sensor

The small silicon chip of Schottky diode (0.8 × 0.8 × 0.4 mm3) with planar arrangement of electrodes (chip PSD) as temperature sensor, which functions under the operating conditions of pressure sensor, was developed. The forward current-voltage I–V characteristic of chip PSD is determined by potential barrier between Mo and n-Si (ND = 3 × 1015 cm−3). Forward voltage UF = 208 ± 6 mV and temperature coefficient TC = -1.635 ± 0.015 mV/°C (with linearity kT &lt; 0.4 % for temperature range of -65 to +85 °C) at supply current IF =1 mA is achieved. The reverse I–V characteristic has high breakdown voltage UBR &gt; 85 V and low leakage current IL &lt; 5 μA at 25 °C and IL &lt; 130 μA at 85 °C (UR = 20 V) because chip PSD contains the structure of two p-type guard rings along the anode perimeter. The application of PSD chip for wider temperature range from -65 to +115 °C is proved. The separate chip PSD of temperature sensor located at a distance of less than 1.5 mm from the pressure sensor chip. The PSD chip transmits input data for temperature compensation of pressure sensor errors by ASIC and for direct temperature measurement.

Research and Diagnostics Laboratory of Pressure Resistive Sensors for Composites

The use of sensors prevents the shortened service life, wear and tear, and decreased accuracy due to degradation during operation. For sensors prone to inaccuracy, a “sensor-device-program” diagnostic assembly has been created. Such a circuit is capable of autonomous diagnosis, calibration and evaluation, up to and including autonomous recalibration of sensors. The diagnostic device also has a shock test function. The purpose of the operation is to deliberately increase the life and accuracy of the sensor under test. The diagnostic device is designed for testing under laboratory conditions and verifies the correctness of the diagnostic algorithm. The result of diagnostics is a report on the current state of the sensor and the changes compared to the past states. The current state includes estimates of accuracy, range, sensitivity or error parameters such as strain constant, maximum Po value and others. Thus, the degradation of selected parameters can be monitored and a mathematical calculation of the results can be applied to possibly improve/correct the sensor errors. By recording force levels, it will be known what force was applied to the sensor during the measurement and thus protects against damage from overloading. The maximized life is achieved through a combination of the accuracy control, calibration performance and error estimation. As a result, the conventional industrial sensor will be a reliable tool for industrial measurements, not just laboratory measurements.