Impurity Contamination and Diffusion during Annealing in Implanted ZnO

2008 ◽  
Vol 388 ◽  
pp. 23-26 ◽  
Author(s):  
Isao Sakaguchi ◽  
Yutaka Adachi ◽  
Takeshi Ogaki ◽  
Kenji Matsumoto ◽  
Shunichi Hishita ◽  
...  

The effect of ion implantation leading to contamination and diffusion of lithium impurity in ZnO ceramics substrates was investigated. The diffusion coefficients of Li in the implanted ZnO annealed at 1000 and 850°C were in good agreement with those in the non-implanted ZnO. At 700°C, Li diffusion in the implanted ZnO was strongly enhanced. Our results show that the defects introduced by the implantation enhance the impurity diffusion at low temperature annealing.

Author(s):  
J.G. Marques ◽  
A.A. Melo ◽  
J.C. Soares ◽  
E. Alves ◽  
M.F. da Silva ◽  
...  

1985 ◽  
Vol 51 ◽  
Author(s):  
R.G. Elliman ◽  
J.M. Poate ◽  
J.S. Williams ◽  
J.M. Gibson ◽  
D.C. Jacobson ◽  
...  

ABSTRACTDiffusion, crystallization and phase separation processes in indium implanted amorphous silicon are examined for low temperature annealing (600°C). Both diffusion and crystallization are shown to be extremely sensitive to the indium concentration. Diffusion coefficients more than 10 orders of magnitude higher than tracer diffusion coefficients in crystalline silicon are measured, and amorphous to crystalline silicon transitions at temperatures as low as 350°C are reported. Phase separation is also observed.


1997 ◽  
Vol 71 (2) ◽  
pp. 255-257 ◽  
Author(s):  
T. Nomachi ◽  
S. Muto ◽  
M. Hirata ◽  
H. Kohno ◽  
Jun Yamasaki ◽  
...  

2006 ◽  
Vol 527-529 ◽  
pp. 811-814 ◽  
Author(s):  
Mariaconcetta Canino ◽  
Antonio Castaldini ◽  
Anna Cavallini ◽  
Francesco Moscatelli ◽  
Roberta Nipoti ◽  
...  

This paper reports on the defects created in a 6H-SiC p-type substrate by a process of ion implantation and a quite low temperature annealing (1300 °C), suitable for the realization of the source/drain regions of a MOSFET because it does not give rise to step bunching phenomena. Current voltage measurements showed the presence of a group of diodes featured by excess current. The effects of defects under the implanted layer on the transport properties of the diodes were investigated by DLTS: four hole traps were detected in all the measured diodes; besides, a broadened peak around 550 K was detected in the diodes that show excess current.


2005 ◽  
Vol 237-240 ◽  
pp. 266-270 ◽  
Author(s):  
Chan Gyu Lee ◽  
Jung Han Lee ◽  
Byeong Seon Lee ◽  
Yong Ill Lee ◽  
Toshitada Shimozaki ◽  
...  

The impurity diffusion coefficients of Cu in Fe have been determined in the temperature range of 1073 - 1163 K by means of Laser Induced Breakdown Spectrometry (LIBS). The volume diffusion coefficients for Cu impurity diffusion in a-iron found in this work are in good agreement with the previously published result. The grain boundary diffusion coefficient gb D s d was also calculated using the volume diffusivity and processing the tails of the measured profiles. The values of the activation energy for volume and grain boundary diffusion were approximately 280 and 161 kJmol-1, respectively. This indicates the possibility of a monovacancy diffusion mechanism in case of volume diffusion. The results for the diffusion coefficients are Dv= 2.2 ×10-2exp(-280 kJmol-1/RT) m2s-1 and gb D s d = 2.6 ×10-11exp(-161 kJmol-1/RT) m3s-1.


1994 ◽  
Vol 08 (17) ◽  
pp. 2353-2389 ◽  
Author(s):  
OLEG M. BRAUN ◽  
IRINA I. ZELENSKAYA ◽  
YURI S. KIVSHAR

Low-temperature diffusion and transport properties of the generalized Frenkel–Kontorova model are investigated analytically in the framework of a phenomenological approach which treats a system of strongly interacting atoms as a system of weaklyinteracting quasiparticles (kinks). The model takes into account realistic (anharmonic) interaction of particles subjected into a periodic substrate potential, and such a generalization leads to a series of novel effects which we expect are related to the experimentally-observed phenomena in several quasi-one-dimensional systems. Analysing the concentration dependences in the framework of the kink phenomenology, we use the renormalization procedure when the atomic structure with a complex unit cell is treated as (more simple) periodic structure of kinks. Using phenomenology of the ideal kink gas, the low-temperature states of the chain are described as those consisting of "residual" kinks supplemented by thermally-excited kinks. This approach allows us to describe the ground states of the chain as a hierarchy of "melted" kink lattices. Dynamical and diffusion properties of the system are then described in terms of the kink dynamics and kink diffusion. The motion equation for a single kink is reduced to a Langevin-type equation which is investigated with the help of the Kramers theory. Susceptibility, conductivity, self-diffusion and chemical diffusion coefficients of the chain are calculated as functions of the kink diffusion coefficient. In this way, we qualitatively analyze, for the first time to our knowledge, dependence of the different diffusion coefficients on the concentration of atoms in the chain. The results are applied to describe peculiarities in conductivity and diffusion coefficients of quasi-one-dimensional systems, in particular, superionic conductors and anisotropic layers of atoms adsorbed on crystal surfaces which were earlier investigated experimentally.


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