Microstructure and Leakage Current Characteristics of ZrTiO4 Thin Films by Sol-Gel Method

2010 ◽  
Vol 434-435 ◽  
pp. 228-230
Author(s):  
Cheng Hsing Hsu ◽  
Shih Yao Lin ◽  
Hsin Han Tung

This paper describes microstructure and leakage current characteristics of ZrTiO4 thin films on ITO/Glass substrate were deposited by sol-gel method with a fix per-heating temperature of 250oC for 30min at various annealing temperatures from 600oC to 800oC for 1 hr. The annealed films were characterized using X-ray diffraction. The surface morphologies of annealed film were examined by atomic force microscopy. The dependence of the microstructure and leakage current characteristics on annealing temperature was also investigated.

2012 ◽  
Vol 486 ◽  
pp. 340-344
Author(s):  
Chun Hung Lai ◽  
Ching Fang Tseng ◽  
Wen Yu Hsu

This paper describes microstructure and optical characteristics of ZnO-doped CeO2thin films were deposited by sol-gel method with various preheating and annealing temperatures. Particular attention will be paid to the effects of an annealing treatment in air ambient on the physical properties. The deposited films were characterized using X-ray diffraction. The surface morphologies of annealed film were examined by scanning electron microscopy. Optical properties of the ZnO-doped CeO2thin films were obtained by UV-visible recording spectrophotometer. The dependence of the optical properties and microstructure characteristics on thermal treatment was also investigated.


2011 ◽  
Vol 216 ◽  
pp. 514-517 ◽  
Author(s):  
Cheng Hsing Hsu ◽  
Jenn Sen Lin ◽  
His Wen Yang

This paper describes microstructure characteristics of MgAl2O4 thin films were deposited by sol-gel method with various annealing temperatures. Particular attention will be paid to the effects of an annealing treatment in air ambient on the physical properties. The annealed films were characterized using X-ray diffraction. The surface morphologies of annealed film were examined by scanning electron microscopy and atomic force microscopy. The dependence of the dielectric properties and microstructure characteristics on annealing temperature was also investigated.


2012 ◽  
Vol 512-515 ◽  
pp. 1171-1174
Author(s):  
Ching Fang Tseng ◽  
Yun Pin Lu ◽  
Hsin Han Tung ◽  
Pai Chuan Yang

This paper describes physical properties of (Ca0.8Sr0.2)TiO3 were deposited by sol-gel method with a fix per-heating temperature of 400oC for 60 min at various annealing temperatures from 600oC to 700oC for 60 min. Particular attention will be paid to the effects of an annealing treatment in air ambient on the physical properties. The annealed films were characterized using X-ray diffraction (XRD). The surface morphologies of annealed film were examined by atomic force microscopy and scanning electron microscopy.


2015 ◽  
Vol 381 ◽  
pp. 127-130 ◽  
Author(s):  
Hone-Zern Chen ◽  
Ming-Cheng Kao ◽  
San-Lin Young ◽  
Jun-Dar Hwang ◽  
Jung-Lung Chiang ◽  
...  

2008 ◽  
Vol 47-50 ◽  
pp. 625-629 ◽  
Author(s):  
X.H. Xia ◽  
J.P. Tu ◽  
J. Zhang ◽  
X.L. Wang

NiO thin films were prepared on ITO glass by a modified sol-gel method in combination with a following annealing process. The XRD results show that the film annealed at 280 °C is amorphous, while the films annealed at and above 300 °C are cubic NiO phase. The electrochromic performances of the annealed films were characterized by means of UV–vis spectroscopy and cyclic voltammetry (CV) measurements. The film annealed at 280 °C exhibits a noticeable electrochromism with a variation of transmittance up to 76 % at 550 nm. The cyclic voltammetry (CV) measurements reveal that the film annealed at higher temperature has better electrochemical reversibility.


1999 ◽  
Vol 596 ◽  
Author(s):  
Hiroya Kitahata ◽  
Kiyoharu Tadanaga ◽  
Tsutomu Minami ◽  
Norifumi Fujimura ◽  
Taichiro Ito

AbstractThe preparation conditions of YMnO3 thin films by the sol-gel method using yttrium alkoxide were optimized to decrease the leakage current of the films. The leakage current of the films was decreased due to the dense microstructure of the films. Moreover, the heat treatment in hydrogen atmosphere and the zirconium doping resulted in a further decrease of the leakage current. The heat treatment in hydrogen atmosphere and the zirconium doping were effective in the decrease of carriers originating in the valence fluctuation of the Mn ions in YMnO3


1993 ◽  
Vol 310 ◽  
Author(s):  
Hidehiro Endo ◽  
M. J. Cima

AbstractEpitaxial formation of KNbO3 films on several substrates was examined. The films were prepared by a sol-gel process using potassium ethoxide and niobium pentaethoxide. Hetero-epitaxial KNbO3 films with (100) orientation were successfully obtained both on MgO (100) and SrTiO3 (100) substrates by heat treatments above 700°C, while polycrystalline KNbO3 were formed on Si (111) substrates. Higher temperatures and extended soaking time promoted the grain growth of KNbO3 and KNbO3 films with improved surface morphologies (smoother surfaces) could be obtained by controlling heat treatment parameters.


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