Microstructure and Optical Properties of ZnO-Doped CeO2 Thin Films Using Sol-Gel Method

2012 ◽  
Vol 486 ◽  
pp. 340-344
Author(s):  
Chun Hung Lai ◽  
Ching Fang Tseng ◽  
Wen Yu Hsu

This paper describes microstructure and optical characteristics of ZnO-doped CeO2thin films were deposited by sol-gel method with various preheating and annealing temperatures. Particular attention will be paid to the effects of an annealing treatment in air ambient on the physical properties. The deposited films were characterized using X-ray diffraction. The surface morphologies of annealed film were examined by scanning electron microscopy. Optical properties of the ZnO-doped CeO2thin films were obtained by UV-visible recording spectrophotometer. The dependence of the optical properties and microstructure characteristics on thermal treatment was also investigated.

2011 ◽  
Vol 216 ◽  
pp. 514-517 ◽  
Author(s):  
Cheng Hsing Hsu ◽  
Jenn Sen Lin ◽  
His Wen Yang

This paper describes microstructure characteristics of MgAl2O4 thin films were deposited by sol-gel method with various annealing temperatures. Particular attention will be paid to the effects of an annealing treatment in air ambient on the physical properties. The annealed films were characterized using X-ray diffraction. The surface morphologies of annealed film were examined by scanning electron microscopy and atomic force microscopy. The dependence of the dielectric properties and microstructure characteristics on annealing temperature was also investigated.


2012 ◽  
Vol 512-515 ◽  
pp. 1171-1174
Author(s):  
Ching Fang Tseng ◽  
Yun Pin Lu ◽  
Hsin Han Tung ◽  
Pai Chuan Yang

This paper describes physical properties of (Ca0.8Sr0.2)TiO3 were deposited by sol-gel method with a fix per-heating temperature of 400oC for 60 min at various annealing temperatures from 600oC to 700oC for 60 min. Particular attention will be paid to the effects of an annealing treatment in air ambient on the physical properties. The annealed films were characterized using X-ray diffraction (XRD). The surface morphologies of annealed film were examined by atomic force microscopy and scanning electron microscopy.


2010 ◽  
Vol 434-435 ◽  
pp. 228-230
Author(s):  
Cheng Hsing Hsu ◽  
Shih Yao Lin ◽  
Hsin Han Tung

This paper describes microstructure and leakage current characteristics of ZrTiO4 thin films on ITO/Glass substrate were deposited by sol-gel method with a fix per-heating temperature of 250oC for 30min at various annealing temperatures from 600oC to 800oC for 1 hr. The annealed films were characterized using X-ray diffraction. The surface morphologies of annealed film were examined by atomic force microscopy. The dependence of the microstructure and leakage current characteristics on annealing temperature was also investigated.


2014 ◽  
Vol 23 (4) ◽  
pp. 047805 ◽  
Author(s):  
Meng-Meng Cao ◽  
Xiao-Ru Zhao ◽  
Li-Bing Duan ◽  
Jin-Ru Liu ◽  
Meng-Meng Guan ◽  
...  

2011 ◽  
Vol 11 (5) ◽  
pp. 1243-1248 ◽  
Author(s):  
K.J. Chen ◽  
F.Y. Hung ◽  
S.J. Chang ◽  
S.J. Young ◽  
Z.S. Hu

2008 ◽  
Vol 517 (3) ◽  
pp. 1032-1036 ◽  
Author(s):  
Chien-Yie Tsay ◽  
Hua-Chi Cheng ◽  
Yen-Ting Tung ◽  
Wei-Hsing Tuan ◽  
Chung-Kwei Lin

Ionics ◽  
2010 ◽  
Vol 16 (9) ◽  
pp. 815-820 ◽  
Author(s):  
Yidong Zhang ◽  
Wenjun Fa ◽  
Fengling Yang ◽  
Zhi Zheng ◽  
Pingyu Zhang

2021 ◽  
Vol 24 (3) ◽  
pp. 38-42
Author(s):  
Marwa Mudfer Alqaisi ◽  
◽  
Alla J. Ghazai ◽  

In this work, pure Zinc oxide and tin doped Zinc oxide thin films nanoparticles with various volume concentrations of 2, 4, 6, and 8V/V% were prepared by using the sol-gel method. The optical properties were investigated by using UV-Visible spectroscope, and the value exhibits the direct allowed transition. The average of transmittance was around ~(17-23) %in visible region. The optical energy band gap was calculated with wavelength (300-900) nm for pure ZnO and Sn doped ZnO thin films which decreases with increasing concentration from 3.4 eV to 3.1 eV respectively and red shift. The real dielectric(εr) and the imaginary dielectric εiare the same behavior of the refractive index(n) the extinction coefficient (k) respectively. The optical limiting properties were studied by using an SDL laser with a wavelength of 235 nm. ZnO and doping thin films an found efficient as optic limiting and depend on the concentration of the all samples.


Sign in / Sign up

Export Citation Format

Share Document