Application of Nanometer Metal Oxides in Infrared Ray Shielding Transparent Thin Film

2011 ◽  
Vol 474-476 ◽  
pp. 195-199 ◽  
Author(s):  
Ai Hong Guo ◽  
Xue Jiao Tang ◽  
Su Juan Zhang
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Metal Oxides ◽  
Sol Gel ◽  
Volume Ratio ◽  
Experimental Results ◽  
Mass Ratio ◽  
Gel Method ◽  
Water Based ◽  
Better Than

Water-based infrared ray shielding coating, that is, nanometer metal oxide is added to the water-based paint, which has anti-IR features without affecting the transparency of the paint. In this paper, the nanometer oxides are prepared by sol-gel method, added into polypropylene sour. In order to improve the infrared ray shielding of the thin film, two kinds of nanometer oxides are added into the polypropylene sour with different volume ratios, the shielding performance of the paint is studied. Experimental results show: in the 8000 ~ 4000cm-1 range, the transmittances of infrared ray is 30% to 75%; in 4000 ~ 400cm-1 range, transmittances decrease significantly; 3% ZnO, 3% Fe2O3, 3% Y2O3, 2% Al2O3 are the best mass ratio of every single nanometer oxide; the infrared shielding rate of Fe2O3 and Y2O3 mixture with the volume ratio of 1 to 4 is better than Fe2O3 and Y2O3 single.

scholarly journals Effects of Types of Metal Oxides on Hydrothermal Gasification of Phenol over Novel Metal Oxide–carbon Composite Supported Ni Catalysts Prepared by Sol-gel Method

2015 ◽  
Vol 58 (5) ◽  
pp. 302-311 ◽  
Author(s):  
Atsushi Ishihara ◽  
Kenta Imanishi ◽  
Tadanori Hashimoto ◽  
Hiroyuki Nasu
Keyword(s):  
Metal Oxide ◽  
Metal Oxides ◽  
Sol Gel ◽  
Carbon Composite ◽  
Ni Catalysts ◽  
Gel Method ◽  
Sol Gel Method ◽  
Supported Ni Catalysts ◽  
Supported Ni

Preparation of conducting film composed of polyaniline and metal oxide by sol-gel method

1999 ◽  
Vol 14 (1) ◽  
pp. 5-7 ◽  
Author(s):  
Takuya Hori ◽  
Noriyuki Kuramoto ◽  
Hideyuki Tagaya ◽  
Masa Karasu ◽  
Jun-ichi Kadokawa ◽  
...  
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Metal Oxide ◽  
Metal Oxides ◽  
Sol Gel ◽  
Silica Matrix ◽  
Conducting Film ◽  
Gel Method ◽  
Sol Gel Method

Conducting thin films were prepared by entrapping water-suspended polyaniline into a silica matrix by a sol-gel route. Without metal oxide, the conductivity of the film decreased after heat treatment. However, in the presence of metal oxides such as TiO2 and Al2O3, the conductivity increased after heat treatment at 85 °C and reached 17 Scm−1 The conductivity of the film depended on the kinds and amounts of metal oxides and the temperature of heat treatment.

Preparation of metal oxide supported catalysts and their utilization for understanding the effect of a support on the catalytic activity

2018 ◽  
Vol 42 (1) ◽  
pp. 402-410 ◽  
Author(s):  
Jhumur Seth ◽  
Prashant Dubey ◽  
Vijay R. Chaudhari ◽  
Bhagavatula L. V. Prasad
Keyword(s):  
Catalytic Activity ◽  
Transition Metal ◽  
Metal Oxide ◽  
Metal Oxides ◽  
Metal Nanoparticles ◽  
Supported Catalysts ◽  
Sol Gel ◽  
Transition Metal Nanoparticles ◽  
Gel Method ◽  
Sol Gel Method

A convenient way of anchoring transition metal nanoparticles onto metal oxides by means of a toluene mediated sol–gel method is described.

NiO-doped CaCu3Ti4O12 Thin Film by Sol-Gel Method

2013 ◽  
Author(s):  
Dong XU ◽  
Qi SONG ◽  
Ke ZHANG ◽  
Hong-Xing XU ◽  
Yong-Tao YANG ◽  
...  
Keyword(s):  
Thin Film ◽  
Sol Gel ◽  
Gel Method ◽  
Sol Gel Method

Metal Oxide Thin Film Transistor with Nano Inorganic Gate Dielectric : Material Chemistry, Nanoscience, Solution Processing and Electronics

2021 ◽  
Vol 23 (09) ◽  
pp. 1078-1085
Author(s):  
A. Kanni Raj ◽  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Gate Dielectric ◽  
Dielectric Material ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
Barium Zirconate ◽  
Operating Voltage ◽  
Metal Oxide Thin Film

Indium Lead Oxide (ILO) based Metal Oxide Thin Film Transistor (MOTFT) is fabricated with Lead Barium Zirconate (PBZ) gate dielectric. PBZ is formed over doped silicon substrate by cheap sol-gel process. Thin film PBZ is analysed with X-ray Diffraction (XRD), Ultra-Violet Visible Spectra (UV-Vis) and Atomic Force Microscope (AFM). IZO is used as bottom gate to contact Thin Film Transistor (TFT). This device needs only 5V as operating voltage, and so is good for lower electronics <40V. It shows excellent emobility 4.5cm2/V/s, with on/off ratio 5×105 and sub-threshold swing 0.35V/decade.

scholarly journals AFM studies and electrochemical characterization of boron-doped diamond surfaces modified with metal oxides by the Sol-Gel method

2006 ◽  
Vol 17 (2) ◽  
pp. 257-264 ◽  
Author(s):  
Hugo B. Suffredini ◽  
Giancarlo R. Salazar-Banda ◽  
Sônia T. Tanimoto ◽  
Marcelo L. Calegaro ◽  
Sergio A. S. Machado ◽  
...  
Keyword(s):  
Metal Oxides ◽  
Sol Gel ◽  
Electrochemical Characterization ◽  
Boron Doped Diamond ◽  
Diamond Surfaces ◽  
Gel Method ◽  
Sol Gel Method ◽  
Boron Doped

Stability characteristics of gallium-doped zinc-tin-oxide thin-film transistors fabricated using a sol-gel method

2013 ◽  
Vol 62 (8) ◽  
pp. 1176-1182 ◽  
Author(s):  
Jong Hoon Lee ◽  
Chang Hoi Kim ◽  
Hong Seung Kim ◽  
Jae Hoon Park ◽  
Jin Hwa Ryu ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
Gel Method ◽  
Sol Gel Method ◽  
Zinc Tin Oxide

scholarly journals Preparation of Hydrophobic Optical Silica Thin Film with Sol-gel Method

2001 ◽  
Vol 17 (12) ◽  
pp. 1112-1116
Author(s):  
Ma Jian-Hua ◽  
◽  
Wu Guang-Ming ◽  
Cheng Yin-Bing ◽  
Sun Qi ◽  
...  
Keyword(s):  
Thin Film ◽  
Sol Gel ◽  
Gel Method ◽  
Sol Gel Method ◽  
Silica Thin Film
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