The Preparation of ZnO: Al Thin Films on Flexible Substrates by Magnetron Sputtering Method

2014 ◽  
Vol 989-994 ◽  
pp. 65-68
Author(s):  
Xiao Jing Wang
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Buffer Layer ◽  
Compressive Stress ◽  
Lattice Constant ◽  
Rf Magnetron Sputtering ◽  
Hexagonal Structure ◽  
Preferred Orientation ◽  
Flexible Substrates ◽  
Average Transmittance

ZnO: Al film was deposited on TPT substrate with SiO2 buffer layer by RF magnetron sputtering. The obtained film had a hexagonal structure and highly (002) preferred orientation. The lattice constant distortion of the film with buffer layer was decreased and the compressive stress was 0.779GPa. The carrier concentratio reached to 3.15×10+20/cm3. The resistivity of ZAO film with SiO2 buffer layer was about 9.2×10-3 Ω·cm and the average transmittance was over 72% in the range of 380~900nm.

Enhancement of Electrical Properties of ZnO: Al Thin Films on Transparent TPT Substrates by SiO2 Buffer Layers

2013 ◽  
Vol 774-776 ◽  
pp. 954-959
Author(s):  
Xiao Jing Wang
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Carrier Concentration ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Hexagonal Structure ◽  
Buffer Layers ◽  
Zno Thin Films ◽  
Average Transmittance ◽  
Doped Zno

The electrical properties need to be improved, although Aluminum doped ZnO thin films (ZnO: Al) have been successfully deposited on transparent TPT substrates by our group. In this paper, ZnO: Al film was deposited on TPT substrate with SiO2 buffer layer by RF magnetron sputtering. The obtained film had a hexagonal structure and highly (002) preferred orientation. Compared with ZAO film without buffer layer, the lattice constant distortion of the film with buffer layer was decreased and the compressive stress was decreased by 9.2%, reaching to 0.779GPa. The carrier concentration and hall mobility of the film with buffer layer were both increased; especially the carrier concentration was enhanced by two orders of magnitude, reaching to 2.65×10+20/cm3. The resistivity of ZAO film with SiO2 buffer layer was about 7.6×10-3 Ω·cm and the average transmittance was over 70% in the range of 450~900nm.

Effects of Al2O3 Buffer Layer on the Properties of ZnO: Al Thin Films Deposited on Glass by Sputtering

2016 ◽  
Vol 848 ◽  
pp. 301-304
Author(s):  
Xiao Jing Wang
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Optical Property ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Hexagonal Structure ◽  
Buffer Layers ◽  
Glass Substrates ◽  
Average Transmittance ◽  
Conductive Property

The ZnO:Al (AZO) films were deposited on glass substrates with Al2O3 buffer layers by RF magnetron sputtering. The obtained films had the hexagonal structure and preferred orientation of (002). Compared with AZO film without buffer layer, the grain size of the film with buffer layer was increased and the conductive property was increased greatly. the grain size of AZO films reached 27.9nm for those with buffer layers. The optical property of AZO films was decreased by the buffer layers. The resistivity of AZO films with Al2O3 buffer layer was about 6.6×10-3 Ω·cm and the average transmittance was over 80% in the range of 450~900nm.

Transparent Conducting TGZO Thin Films Deposited by DC Magnetron Sputtering at Room Temperature

2010 ◽  
Vol 663-665 ◽  
pp. 1041-1044
Author(s):  
Han Fa Liu ◽  
Hua Fu Zhang
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Hexagonal Structure ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
Transparent Conducting ◽  
Average Transmittance ◽  
Co Doped

Transparent conducting Ti-Ga co-doped zinc oxide (TGZO) thin films with high transmittance, low resistivity were firstly prepared on glass substrate by direct current (DC) magnetron sputtering at room temperature. X-ray diffraction (XRD) and scanning electron microscopy (SEM) show that the TGZO films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. The lowest resistivity obtained in our experiment is 3.95×10-4Ω⋅cm. The average transmittance of the films is over 92% in the range of 400~760 nm.

Effects of Power on Properties of ZnO:Al Films Deposited on Flexible Substrates by RF Magnetron Sputtering

2010 ◽  
Vol 650 ◽  
pp. 163-167 ◽  
Author(s):  
Xiao Jing Wang ◽  
Qing Song Lei ◽  
Jun Ming Yuan ◽  
Wei Li Zhou ◽  
Jun Yu
Keyword(s):  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Visible Region ◽  
Hall Effect Measurement ◽  
Rf Magnetron Sputtering ◽  
Optical Transmittance ◽  
Hexagonal Structure ◽  
Preferred Orientation ◽  
Sputtering Power ◽  
Uv Visible

Aluminium doped ZnO thin films(ZnO:Al) films were deposited on transparent TPT substrate at room temperature by RF magnetron sputtering. The effects of sputtering power on structural, optical and electrical properties were investigated by X-ray diffractometery (XRD), scanning electron microscope (SEM), UV-visible spectrophotometer, as well as Hall Effect Measurement System. Results revealed that the obtained film had a hexagonal structure and a highly (0 0 2) preferred orientation with the c-axis perpendicular to the substrate. The grain size and preferred orientation of crystallites showed dependence on the sputtering power. The optical transmittance of the ZAO films depended strongly on the sputtering power and decreased with increasing power.The transmittance of the ZAO film at 80W was over 80% in the visible region. And the electrical properties of the ZAO films are improved with the increase of the sputtering power.The resistivity of obtained film at 200W was 3.15×10-2Ω•cm.

Preferred orientation and microstructure of Ni-Zn-Cu ferrite thin films deposited by rf magnetron sputtering

1994 ◽  
Vol 9 (9) ◽  
pp. 2425-2433 ◽  
Author(s):  
Hae Seok Cho ◽  
Min Hong Kim ◽  
Hyeong Joon Kim
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Process Parameters ◽  
Rf Magnetron Sputtering ◽  
Preferred Orientation ◽  
Ferrite Film ◽  
Rf Power ◽  
Columnar Grains ◽  
Ferrite Thin Films ◽  
Ferrite Films

We have investigated the effects of process parameters such as rf power, substrate, and gas pressure PAr on preferred orientation, microstructure, and magnetic properties of Ni-Zn-Cu ferrite thin films deposited by conventional rf magnetron sputtering. The texture structure was developed in the ferrite films deposited on the SiO2/Si(100) substrate at low rf power conditions. The ferrite film on the Si(111) substrate always had (111) texture irrespective of process parameters due to lattice matching, but the texture of the ferrite film on SiO2/Si(100) changed from (111) to (100) and finally returned to (111) orientation again with decreasing PAr. Such behavior would occur presumably due to the characteristic atomic stacking sequence corresponding to a given condition of the ion bombardment. The ferrite films deposited at low PAr had a denser microstructure consisting of tightly packed columnar grains with a smoother surface, better adhesion to the substrate, and better crystallinity than those at high PAr. Hc‖ of ferrite film deposited at low PAr was larger than that at high PAr and also larger than Hc⊥ of that deposited at the same PAr because larger compressive stress was induced at low PAr than at high PAr.

Microstructural characterization of YBaCuO thin films deposited by rf magnetron sputtering as a function of annealing conditions

1991 ◽  
Vol 6 (2) ◽  
pp. 252-263 ◽  
Author(s):  
M. Ece ◽  
R.W. Vook ◽  
John P. Allen
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Buffer Layer ◽  
Microstructural Characterization ◽  
Rf Magnetron Sputtering ◽  
Flash Evaporation ◽  
Annealing Conditions ◽  
Deposited Films

Thin films of Y1Ba2Cu3O7−x have been prepared on MgO, SrTiO3/Al2O3, and Al2O3 substrates by rf magnetron sputtering. A buffer layer of SrTiO3 was deposited on Al2O3 by flash evaporation. The as-deposited films on MgO and SrTiO

RF magnetron sputtering ferroelectric PbZr0.52Ti0.48O3 thin films with (001) preferred orientation on colossal magneto-resistive layers

2006 ◽  
Vol 60 (13-14) ◽  
pp. 1714-1718 ◽  
Author(s):  
S.C. Ray ◽  
M. Algueró ◽  
J. Ricote ◽  
M.L. Calzada ◽  
C. Prieto ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Preferred Orientation
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