Influence of BaSiO3 Doped on the Properties of BST Capacitor Ceramics

2013 ◽  
Vol 575-576 ◽  
pp. 91-94
Author(s):  
Xin You Huang ◽  
Mu Sheng Huang ◽  
Chun Hua Gao ◽  
Zhi Gang Chen
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Solid State ◽  
Sintering Temperature ◽  
Lattice Parameter ◽  
Solid State Method ◽  
Xrd Study ◽  
Sem Study ◽  
State Method ◽  
Bst Ceramics

The influence of the BaSiO3 dopant on the dielectric properties of (Ba,Sr)TiO3(BST) capacitor ceramics was studied using conventional capacitor ceramics solid state method and XRD , SEM and other analytical methods. The results show that BaSiO3 doping can improve the sintering and microstructure of the capacitor ceramics. SEM study show that BaSiO3 doping can make grain grow uniformly and suppress the grain to grow up, and the structure of ceramics is compact with little pore. XRD study show that there is little SiO2 phase and little influence of BST lattice parameter when BaSiO3 doped amount is 3 mol%.The dielectric properties of BST ceramics doped with 3 mol% BaSiO3 are as follows: dielectric constant (εr) of 1792, which is a little higher than undoped BST ceramics, tanδ of 1%, which is decreased 7.24% compared with undoped BST ceramics, and the sintering temperature decreases 40°C.

Effect of Sintering Temperature on CuO Doped Barium Zinc Tantalate (BZT) Dielectric Properties

2016 ◽  
Vol 840 ◽  
pp. 8-13
Author(s):  
Hidayani Jaafar ◽  
Zainal Arifin Ahmad ◽  
Mohd Fadzil Ain
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Relative Density ◽  
Sintering Temperature ◽  
Microwave Dielectric Properties ◽  
Solid State Method ◽  
Microwave Dielectric ◽  
Constant E ◽  
State Method ◽  
Tan Δ

The structure and dielectric properties of Barium Zinc Tantalate (BZT) doped by copper oxide (CuO) with a variety of values of mol% doping from 0, 0.1, 0.25, 1.0, 1.5 and 2.5 were prepared using a solid state method. The addition of CuO did not disturb the 1:2 ordering structure of the BZT ceramic. The grain size increased when the addition of doping increased. A small amount of doping elements increased the relative density. The dielectric constant (ɛr) value of the BZT significantly improved with the addition of the CuO for the specimens sintered at 1250°C and it could be explained by the increase of the relative density. The tan δ of the CuO doped with BZT ceramics is lower than pure BZT ceramics, and decreases as the CuO content increases. Meanwhile, for the percentage of bandwidth (%BW) it is shown that the best result is produced when it is doped with 0.25 mol% CuO and sintered at 1250°C. The best microwave dielectric properties obtained were ɛr=70.28, tan δ = 0.024, %BW = 7.83 which occurred for the 0.25 mol% doped CuO and when sintered at 1250°C/4 h.

Microwave Properties in BaO-TiO2 System Added by ZrO2 and WO3

2012 ◽  
Vol 512-515 ◽  
pp. 1155-1159 ◽  
Author(s):  
Xin Ye Yang ◽  
Xiao Hui Wang ◽  
An Ji ◽  
Long Tu Li
Keyword(s):  
Dielectric Properties ◽  
Dielectric Property ◽  
Solid State ◽  
Sintering Temperature ◽  
Microwave Properties ◽  
Solid State Method ◽  
Microwave Dielectric ◽  
Conventional Solid State Method ◽  
Higher Temperature ◽  
State Method

Both BaTi4O9 and Ba2Ti9O20 have the best microwave properties among many compounds in BaO-TiO2 system. The microwave performance of the ceramics in BaO-TiO2 system, which were prepared by conventional solid state method, was investigated in this paper. The study indicates that the (Ti,Zr)/Ba ratio has a great effect on the dielectric properties of the ceramic due to different BaTi4O9/Ba2Ti9O20 ratio. The pure BaTi4O9 ceramic exhibits the most outstanding microwave properties, with εr=35.55 and Q×f=43300GHz. On the contrary, the dielectric property of the pure Ba2Ti9O20 ceramic was not good enough, which should be doped with some additive additions. WO3 was incorporated into the system and the sintering temperature was adjusted to improve the microwave dielectric property. The Q×f was increased to 38000GHz by adding 1.35mol% WO3 due to the formation of a little BaWO4 phase. When sintered at a higher temperature (1380°C), the BaO-TiO2 system ceramic has εr =37.04 and Q×f =44874GHz.

scholarly journals Influence of CaO and CuO on Barium Zinc Tantalate (BZT) Dielectric Properties

2015 ◽  
Vol 3 (3) ◽  
pp. 30-34
Author(s):  
Hidayani Jaafar ◽  
Sitti Fatimah Mhd Ramle ◽  
Muhammad Azwadi Sulaiman ◽  
Nurul Nadia Aminuddin
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Solid State ◽  
Copper Oxide ◽  
Relative Density ◽  
Calcium Oxide ◽  
Return Loss ◽  
Solid State Method ◽  
State Method ◽  
R Value

The structure and dielectric properties of Barium Zinc Tantalate (BZT) doped by copper oxide (CuO) and calcium oxide (CaO) with a variety of values of mol% doping from 0, 0.1, 0.25, 0.5, 1.0, 1.5 and 2.5 were prepared using a solid state method. A small amount of doping elements increased the relative density. The dielectric constant (?r) value of the BZT significantly improved with the addition of the CuO and CaO for the specimens sintered at 1250°C and it could be explained by the increase of the relative density. The tan ? of the CuO and CaO doped with BZT ceramics is lower than pure BZT ceramics, and decreases as the CuO and CaO content increases. Minimum return loss (dB) shown that the best results are produced when it is doped with 0.25 mol% CaO and 0.5 mol% for CuO sintered at 1250°C.

Effect of Sintering Temperatures on Sr-Doped NiO Ceramics

2016 ◽  
Vol 840 ◽  
pp. 61-65 ◽  
Author(s):  
Nurul Nadia Mohd Salim ◽  
Julie Juliewatty Mohamed ◽  
Zainal Arifin Ahmad
Keyword(s):  
Dielectric Constant ◽  
Grain Size ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
Size Range ◽  
Sintering Temperature ◽  
Wide Frequency Range ◽  
Frequency Range ◽  
Solid State Method ◽  
State Method

Sr - doped NiO ceramic was prepared using solid state method. The calcination temperature used at 950 oC for 4 hours and the sintering temperatures was varied from 1100 to 1300 oC for 3 hours. The results depict the microstructures increasing in grains size (1-8 μm) by increase of sintering temperatures. The density and porosity testing support the result of microstructures analysis. The larger grains size induced the increase in density and lower in porosity. The dielectric properties is observed in a wide frequency range of (1 - 1 000 MHz). The increase of dielectric constant is associated with the decrease of dielectric loss. The optimum sintering temperature was obtained at 1200 oC depict the grain size range (1 - 2 μm) with highest dielectric constant (1.61 x 103) and lowest dielectric loss (1.15) at 1MHz.

Structural, optical and dielectric properties of Sr2Ni1−xMgxWO6 (x = 0.00, 0.02, 0.04, and 0.06) double perovskite

2021 ◽  
Vol 9 (38) ◽  
pp. 13439-13446
Author(s):  
Nur Amira Farhana Mohamed Saadon ◽  
Nurliyana Mohd Ali ◽  
Norazila Ibrahim ◽  
Zakiah Mohamed
Keyword(s):  
Dielectric Properties ◽  
Solid State ◽  
Double Perovskite ◽  
Solid State Method ◽  
State Method

Sr2Ni1−xMgxWO6 (0.00 ≤ x ≤ 0.06) polycrystalline samples were prepared using a solid state method and the structural, optical and dielectric properties of the samples were studied using XRD, UV-vis, FTIR and EIS respectively.

The Effect of Sintering Temperature to the Properties of Zinc Oxide

2013 ◽  
Vol 795 ◽  
pp. 419-423 ◽  
Author(s):  
J.H. Lim ◽  
C.K. Yeoh ◽  
Pei Leng Teh ◽  
W.M. Arif ◽  
A. Chik
Keyword(s):  
Thermal Conductivity ◽  
Zinc Oxide ◽  
Thermal Properties ◽  
Solid State ◽  
Sintering Temperature ◽  
Solid State Method ◽  
Influence Of Temperature ◽  
Temperature Range ◽  
Influence Of Temperature On ◽  
State Method

In this paper, different sintering temperature used to study the influence of temperature on the structural and thermal properties of zinc oxide (ZnO). On this research, the sample was prepared by solid-state method for zinc oxide (ZnO) at different sintering temperature which was 700°C, 800°C and 900°C. It was observed that the density of bulk ZnO that sintering at 900°C had the higher value of density 5.03 g/cm3. The microhardness of the bulk ZnO had a higher measurement 397.3 Hv after sintered at 900°C. ZnO that sintering at 900°C had been observed that had thermal conductivity 1.1611W/cm-K in the sintering temperature range 700°C to 900°C.

Low Temperature Sintering and Microwave Dielectric Properties of Zinc Titanate Ceramics for LTCC Applications

2008 ◽  
Vol 368-372 ◽  
pp. 179-182
Author(s):  
Zong Chi Liu ◽  
Dong Xiang Zhou ◽  
Shu Ping Gong
Keyword(s):  
Dielectric Properties ◽  
Sintering Temperature ◽  
Microwave Dielectric Properties ◽  
Sintering Behavior ◽  
Solid State Method ◽  
Zinc Titanate ◽  
Microwave Dielectric ◽  
Conventional Solid State Method ◽  
State Method ◽  
Titanate Ceramics

The effects of CuO-MoO3 addition on the sintering behavior and microwave dielectric properties of ZnO-TiO2 ceramics were investigated. ZnO-TiO2 ceramics were prepared with conventional solid-state method and sintered at temperatures from 850 to 1050 °C. The sintering temperature of ZnO-TiO2 ceramics with CuO-MoO3 addition could be effectively reduced to 950 °C due to the liquid phase effects resulting from the additives. A proper amount of CuO-MoO3 addition could effectively improve the densification and microwave dielectric properties of ZnO-TiO2 ceramics. ZnO-TiO2 ceramics with 3 wt% addition sintered at 950 °C for 4 h exhibited better microwave dielectric properties as follows: εr of 26.8, a Q×f value of 16780 GHz at 5.42 GHz, and a τ f value of +34.7 ppm/°C.

Effects of Mg2SiO4 Addition on the Microstructure and Dielectric Properties of MgTiO3-CaTiO3 Ceramics

2013 ◽  
Vol 675 ◽  
pp. 200-204
Author(s):  
Fei Shi ◽  
Peng Cheng Du ◽  
Jing Xiao Liu ◽  
Ji Wei Wu ◽  
De Qing Chen ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Solid State ◽  
Dielectric Loss ◽  
Solid State Reaction ◽  
Sintering Temperature ◽  
Solid State Reaction Method ◽  
Composite Ceramics ◽  
Reaction Method ◽  
Dielectric Ceramics

The Mg2SiO4-MgTiO3-CaTiO3 composite dielectric ceramics with different Mg2SiO4 addition amounts were prepared by solid state reaction method. The effects of Mg2SiO4 addition amounts on the microstructure and dielectric properties as well as sintering temperature of xMg2SiO4-(0.95-x)MgTiO3-0.05CaTiO3 (abbreviated as xMSTC, 0.25≦x≦0.75) composite ceramics were investigated. The results indicated that the sintering temperature of MgTiO3-CaTiO3 based ceramics with Mg2SiO4 addition could be lowered effectively to 1320~1340°C, and the dielectric constant decreased and dielectric loss increased gradually with the increase of Mg2SiO4 content. The 0.45MSTC ceramics containing 45 wt% Mg2SiO4 and sintered at 1340°C showed desirable dielectric properties with dielectric constant εr=13.3，dielectric loss tanδ=4.5×10-4 and temperature coefficient of relative permittivity τε =10 ppm/°C.

scholarly journals Structural, optical and dielectric properties of tellurium-based double perovskite Sr2Ni1−xZnxTeO6

RSC Advances ◽  
2021 ◽  
Vol 11 (50) ◽  
pp. 31631-31640
Author(s):  
Fatasya Izreen Hanim Alias ◽  
Rozilah Rajmi ◽  
Mohd Fauzi Maulud ◽  
Zakiah Mohamed
Keyword(s):  
Dielectric Properties ◽  
Solid State ◽  
Double Perovskite ◽  
Solid State Method ◽  
Conventional Solid State Method ◽  
State Method

In this paper, Sr2Ni1−xZnxTeO6 (x = 0.0, 0.2, 0.4, 0.6, 0.8, 1.0) double perovskite compounds were synthesised by the conventional solid-state method, and the structural, optical and dielectric properties were investigated.

Microstructures and Microwave Properties of CaTiO3 Doped (ZnMg)TiO3 Dielectrics with CaO-B2O3-SiO2 Addition

2010 ◽  
Vol 434-435 ◽  
pp. 235-239
Author(s):  
Bo Li ◽  
Xiao Hua Zhou ◽  
Shu Ren Zhang ◽  
Long Cheng Xiang
Keyword(s):  
Solid State ◽  
Sintering Temperature ◽  
Secondary Phase ◽  
Microwave Properties ◽  
Solid State Method ◽  
Conventional Solid State Method ◽  
Eds Analysis ◽  
Liquid Phases ◽  
State Method ◽  
Evolution Of Microstructure

The microwave properties and microstructures of (ZnMg)TiO3-based dielectric prepared by conventional solid-state method were investigated as functions of CaTiO3 and CaO-B2O3-SiO2 additions. The effects of CaTiO3 on the crystal phase and the evolution of microstructure of (Zn0.65Mg0.35)TiO3 were studied. The result indicated that CaTiO3 secondary phase coexists with (ZnMg)TiO3 main phase in the ZMT-CT ceramics, which confirmed by EDS analysis. Because of CaTiO3 with large τf value (τf = 800 ppm/°C), the temperature coefficient of resonant frequency (τf) of ZMT-CT with biphasic structure was adjusted to near zero value. The microwave properties of (Zn0.65Mg0.35)TiO3 ceramics doped with 5wt% CaTiO3 sintered at 1150°C were ε ≈ 24, τf ≈ ±10 ppm/°C, Q×f > 45,000 GHz. Further, it was found that the CaO-B2O3-SiO2 additive could successfully reduce the sintering temperature of (Zn0.65Mg0.35)TiO3–CaTiO3 ceramics from 1150 to 950°C, and significantly improve the densification of this system, which were densified below 1000°C. This was due to the formation of liquid phases during the sintering observed by SEM. The (Zn0.65Mg0.35)TiO3–0.05CaTiO3 dielectrics with 1 wt% CaO-B2O3-SiO2 sintered at 950~1000°C exhibited the optimum microwave properties: ε ≈ 22, Q×f ≈ 20,000 GHz and τf ≈ ±10 ppm/°C.

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