Influence of the Plasma of Nanosecond Diffuse Discharge in Air at Atmospheric Pressure on the Electrophysical Properties of Epitaxial CdHgTe Films

In this paper the influence of the volume discharge of nanosecond duration formed in a non-uniform electric field at atmospheric pressure on samples of CdHgTe (MCT) epitaxial films of p-type conductivity is investigated. Measurements of electro-physical parameters of MCT samples after irradiation have shown that a layer exhibiting n-type conductivity is formed in the near-surface area of epitaxial films. After more than 600 pulses of influence parameters and thickness of the resulting n-layer is such that the measured field dependence of Hall coefficient corresponds to the material of n-type conductivity. The obtained results show that application of volume nanosecond discharge in air at atmospheric pressure is promising for the modification of the surface properties of epitaxial films of MCT.

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The relaxation of electrophysical properties HgCdTe epitaxial films affected by plasma of high frequency nanosecond volume discharge in atmospheric-pressure air

Surface and Coatings Technology ◽

10.1016/j.surfcoat.2020.125527 ◽

2020 ◽

Vol 387 ◽

pp. 125527

Author(s):

A.G. Korotaev ◽

D.V. Grigoryev ◽

A.V. Voitsekhovskii ◽

K.A. Lozovoy ◽

V.F. Tarasenko ◽

...

Keyword(s):

Atmospheric Pressure ◽

High Frequency ◽

Epitaxial Films ◽

Volume Discharge ◽

Electrophysical Properties

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Influence of pulsed nanosecond volume discharge in atmospheric-pressure air on the electrical characteristics of MCT epitaxial films

10.1117/12.2224704 ◽

2015 ◽

Cited By ~ 3

Author(s):

Denis V. Grigoryev ◽

Alexandr V. Voitsekhovskii ◽

Kirill A. Lozovoy ◽

Sergey N. Nesmelov ◽

Stanislav M. Dzyadukh ◽

...

Keyword(s):

Atmospheric Pressure ◽

Epitaxial Films ◽

Volume Discharge ◽

Electrical Characteristics

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Modification of copper surface by runaway electrons preionized diffuse discharges at atmospheric pressure

Laser and Particle Beams ◽

10.1017/s0263034616000033 ◽

2016 ◽

Vol 34 (2) ◽

pp. 202-209 ◽

Cited By ~ 7

Author(s):

Cheng Zhang ◽

Mikhail V. Erofeev ◽

Zhi Fang ◽

Mikhail A. Shulepov ◽

Zhongsheng Zhou ◽

...

Keyword(s):

Rise Time ◽

Atmospheric Pressure ◽

Single Pulse ◽

Runaway Electrons ◽

Water Contact ◽

Peak Voltage ◽

Near Surface ◽

Diffuse Discharge ◽

Different Depths ◽

Cu Foil

AbstractRunaway electrons preionized diffuse discharge (REP DD) could generate volume non-thermal plasmas at atmospheric pressure, thus is widely used for surface modification. In this paper, two pulsed generators are used to produce REP DD for modifying copper (Cu) foil in atmospheric air. One generator produces repetitive pulses with a peak voltage of 40 kV and a rise time of 150 ns. The other generator produces single pulse with a peak voltage of 280 kV and a rise time of 0.5 ns. After the treatment, the modification results for including the macro topography, chemical composition and microhardness in different depths of the Cu surface are analyzed. In order to estimate the modification results in different areas of the Cu foil, several points from the center to the edge of the Cu sample are selected. It could be observed that the maximal modification effect usually appears in the area where the density of the diffuse discharge plasma is highest. The experimental results show REP DD treatment could significantly decrease the water contact angle and increase surface energy of the Cu foil. Meanwhile, it could decrease the carbon concentration and increase oxygen concentration in the near-surface layer of the Cu sample, and enhance the microhardness in different depths of the Cu foil.

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Generators of Atmospheric Pressure Diffuse Discharge Plasma and Their Use for Surface Modification

Plasma ◽

10.3390/plasma2010004 ◽

2019 ◽

Vol 2 (1) ◽

pp. 27-38

Author(s):

Mikhail Erofeev ◽

Mikhail Lomaev ◽

Vasilii Ripenko ◽

Mikhail Shulepov ◽

Dmitry Sorokin ◽

...

Keyword(s):

Surface Layer ◽

Atmospheric Pressure ◽

Discharge Plasma ◽

Atmospheric Pressure Plasma ◽

Strength Distribution ◽

Uniform Electric Field ◽

Flow Mode ◽

Diffuse Discharge ◽

Circulation Mode ◽

Discharge Gap

Studies of the properties of runaway electron preionized diffuse discharges (REP DDs) and their possible use have been carried out for more than 15 years. Three experimental setups generating a low-temperature atmospheric-pressure plasma and differing in the geometry of a discharge gap were developed. They allow the treatment of surfaces of different materials with an area of several tens of square centimeters. A diffuse discharge plasma was formed in the pulse–periodic mode by applying negative voltage pulses with an amplitude of several tens of kilovolts and a duration of 4 ns to a discharge gap with sharply non-uniform electric field strength distribution. This paper presents experimental results of the study of the surface layer microstructure of copper and steel specimens of different sizes after treatment with the REP DD plasma in nitrogen flow mode and nitrogen circulation mode in the discharge chamber. It was shown that after 105 discharge pulses, the carbon concentration decreases and a disoriented surface layer with a depth of up to 200 nm is formed. Moreover, the results of X-ray phase analysis did not reveal changes in the phase composition of the surface of copper specimens. However, as a result of surface treatment with the REP DD plasma, the copper lattice becomes larger and the microstress increases.

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Explanation of Observed P-Type Conductivity in Movpe ZnSE/GaAs Heterostructures

MRS Proceedings ◽

10.1557/proc-198-415 ◽

1990 ◽

Vol 198 ◽

Cited By ~ 1

Author(s):

O. Briot ◽

T. Cloitre ◽

N. Tempier ◽

R. Sauvezon ◽

M. Averous ◽

...

Keyword(s):

Crystal Growth ◽

Simple Model ◽

Zinc Selenide ◽

Epitaxial Films ◽

Type Conductivity ◽

Valence Bands ◽

P Type ◽

Electrical Characterizations

ABSTRACTTogether with the advanced growth technologies of zinc selenide epitaxial films by MOVPE or MBE, severals workers have reported the observation of p-type conductivity in this material. However, there are some inconsistencies in most of the papers reporting such results.We report here the MOVPE crystal growth of nominaly undoped ZnSe/GaAs S.I. layers using alkyls as precursors, and their optical and electrical characterizations. We show the possibility to observe p-type conductivity in ZnSe due to a hole accumulation at the interface in the GaAs side. This is consistent with a simple model taking Into account the conduction and valence bands discontinuities at the ZnSe/GaAs interface.

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