Degenerate p-type conductivity in wide-gap LaCuOS1−xSex (x=0–1) epitaxial films

In this paper the influence of the volume discharge of nanosecond duration formed in a non-uniform electric field at atmospheric pressure on samples of CdHgTe (MCT) epitaxial films of p-type conductivity is investigated. Measurements of electro-physical parameters of MCT samples after irradiation have shown that a layer exhibiting n-type conductivity is formed in the near-surface area of epitaxial films. After more than 600 pulses of influence parameters and thickness of the resulting n-layer is such that the measured field dependence of Hall coefficient corresponds to the material of n-type conductivity. The obtained results show that application of volume nanosecond discharge in air at atmospheric pressure is promising for the modification of the surface properties of epitaxial films of MCT.

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The Problem of Doping Wide Gap II-VI Compound Semiconductors and Its Solutions

MRS Proceedings ◽

10.1557/proc-228-319 ◽

1991 ◽

Vol 228 ◽

Cited By ~ 2

Author(s):

W. I. Wang

Keyword(s):

Compound Semiconductors ◽

Type Conductivity ◽

Wide Gap ◽

P Type ◽

First Time

ABSTRACTWide gap II-VI compound semiconductors are difficult to be doped amphoterically. After more than thirty years of research in II-VI compound semiconductors, there does not even exist a satisfatory simultaneous explanation as to why ZnSe can be easily doped n-type while undoped ZnTe only exhibits p-type conductivity. In this paper we propose an explanation based on the III-V/II-VI analogy which for the first time can explain these phenomena, and provide solutions to the problem of doping II-VI compound semiconductors.

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Explanation of Observed P-Type Conductivity in Movpe ZnSE/GaAs Heterostructures

MRS Proceedings ◽

10.1557/proc-198-415 ◽

1990 ◽

Vol 198 ◽

Cited By ~ 1

Author(s):

O. Briot ◽

T. Cloitre ◽

N. Tempier ◽

R. Sauvezon ◽

M. Averous ◽

...

Keyword(s):

Crystal Growth ◽

Simple Model ◽

Zinc Selenide ◽

Epitaxial Films ◽

Type Conductivity ◽

Valence Bands ◽

P Type ◽

Electrical Characterizations

ABSTRACTTogether with the advanced growth technologies of zinc selenide epitaxial films by MOVPE or MBE, severals workers have reported the observation of p-type conductivity in this material. However, there are some inconsistencies in most of the papers reporting such results.We report here the MOVPE crystal growth of nominaly undoped ZnSe/GaAs S.I. layers using alkyls as precursors, and their optical and electrical characterizations. We show the possibility to observe p-type conductivity in ZnSe due to a hole accumulation at the interface in the GaAs side. This is consistent with a simple model taking Into account the conduction and valence bands discontinuities at the ZnSe/GaAs interface.

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Heteroepitaxial Growth of a Wide Gap P-type Oxysulfide, LaCuOS

MRS Proceedings ◽

10.1557/proc-747-v6.9 ◽

2002 ◽

Vol 747 ◽

Author(s):

Hidenori Hiramatsu ◽

Kazushige Ueda ◽

Hiromichi Ohta ◽

Masahiro Hirano ◽

Hideo Hosono

Keyword(s):

Optical Properties ◽

Solid Phase ◽

Epitaxial Films ◽

Solid Phase Epitaxy ◽

Heteroepitaxial Growth ◽

Electrical And Optical Properties ◽

Type Semiconductor ◽

Wide Gap ◽

Spe Method ◽

P Type

ABSTRACTEpitaxial films of LaCuOS, a wide gap p-type semiconductor, were grown on yittria- stabi-lized-zirconia (YSZ) (001) or MgO (001) substrates by a reactive solid phase epitaxy (R-SPE) method. Crystal quality, electrical and optical properties on the epitaxial films on each substrate are examined in this paper. Achievement of the heteroepitaxial growth of LaCuOS on the MgO (001) substrate improves optical properties of LaCuOS such as spectral bandwidths and emission intensity, suggesting that the MgO (001) substrate is more preferable than the YSZ (001) for epitaxial growth substrate for LaCuOS.

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Electrical properties of calcia-stabilised zirconia ceramics: voltage-induced p-type conductivity and oxygen redox activity

Open Ceramics ◽

10.1016/j.oceram.2021.100117 ◽

2021 ◽

pp. 100117

Author(s):

Julia Ramírez-González ◽

Anthony R. West

Keyword(s):

Electrical Properties ◽

Redox Activity ◽

Zirconia Ceramics ◽

Type Conductivity ◽

P Type

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Achieving p-type conductivity in wide-bandgap SnO2 by a two-step process

Applied Physics Letters ◽

10.1063/5.0045663 ◽

2021 ◽

Vol 118 (11) ◽

pp. 112102

Author(s):

Wang Fu ◽

Mingkai Li ◽

Jiashuai Li ◽

Guojia Fang ◽

Pan Ye ◽

...

Keyword(s):

Wide Bandgap ◽

Step Process ◽

Type Conductivity ◽

P Type

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Effect of Mn2+ substitution on the structure, properties and HER activity of cadmium phosphochlorides

RSC Advances ◽

10.1039/c9ra10711h ◽

2020 ◽

Vol 10 (9) ◽

pp. 5134-5145

Author(s):

Anand Roy ◽

Anjali Singh ◽

S. Assa Aravindh ◽

Swaraj Servottam ◽

Umesh V. Waghmare ◽

...

Keyword(s):

Type Conductivity ◽

P Type ◽

Structure Properties

Mn2+ prefers the Cd-sites having larger number of tightly bounded Cl-ligands. Pure Cd7P4Cl6 exhibits n-type conductivity whereas Cd5.8Mn1.2P4Cl6 exhibits p-type conductivity. The HER activity of Cd7−yMnyP4Cl6 is superior to that of pristine Cd7P4Cl6.

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