In this paper the influence of the volume discharge of nanosecond duration formed in a non-uniform electric field at atmospheric pressure on samples of CdHgTe (MCT) epitaxial films of p-type conductivity is investigated. Measurements of electro-physical parameters of MCT samples after irradiation have shown that a layer exhibiting n-type conductivity is formed in the near-surface area of epitaxial films. After more than 600 pulses of influence parameters and thickness of the resulting n-layer is such that the measured field dependence of Hall coefficient corresponds to the material of n-type conductivity. The obtained results show that application of volume nanosecond discharge in air at atmospheric pressure is promising for the modification of the surface properties of epitaxial films of MCT.
Electro-physical characteristics of a HgCdTe epitaxial films upon exposure by a volume discharge in air at atmospheric pressure