Avalanche Ruggedness Assessment of 1.2kV 45mΩ Asymmetric Trench SiC MOSFETs

2020 ◽  
Vol 1004 ◽  
pp. 837-842
Author(s):  
Xiao Chuan Deng ◽  
Hao Zhu ◽  
Xuan Li ◽  
Xiao Jie Xu ◽  
Kun Zhou ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Single Pulse ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Safe Operation ◽  
Effect Transistor ◽  
The Impact

In this paper, avalanche ruggedness of the commercial 1.2kV 45mΩ asymmetric silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET) is investigated by single-pulse unclamped inductive switching (UIS) test. The avalanche safe operation area (SOA) of the MOSFET is established. The impact of inductance and temperature on avalanche capability is exhibited, which is valuable for many application circuits. The variation in critical avalanche energy with peak avalanche current, peak avalanche current with avalanche time, and temperatures dependence of critical avalanche energy are confirmed.

Effect of Metal - Silicon Nanowire Contacts on the Performance of Accumulation Metal Oxide Semiconductor Field Effect Transistor

2008 ◽  
Vol 1144 ◽  
Author(s):  
Pranav Garg ◽  
Yi Hong ◽  
Md. Mash-Hud Iqbal ◽  
Stephen J. Fonash
Keyword(s):  
Metal Oxide ◽  
Silicon Nanowires ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Manufacturing Cost ◽  
Effect Transistor ◽  
The Impact

ABSTRACTRecently, we have experimentally demonstrated a very simply structured unipolar accumulation-type metal oxide semiconductor field effect transistor (AMOSFET) using grow-in-place silicon nanowires. The AMOSFET consists of a single doping type nanowire, metal source and drain contacts which are separated by a partially gated region. Despite its simple configuration, it is capable of high performance thereby offering the potential of a low manufacturing-cost transistor. Since the quality of the metal/semiconductor ohmic source and drain contacts impacts AMOSFET performance, we repot here on initial exploration of contact variations and of the impact of thermal process history. With process optimization, current on/off ratios of 106 and subthreshold swings of 70 mV/dec have been achieved with these simple devices

Improving the accuracy of the charge-sheet model for the long-channel metal-oxide semiconductor field-effect transistor

1987 ◽  
Vol 65 (8) ◽  
pp. 995-998
Author(s):  
N. G. Tarr
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Inversion Layer ◽  
Potential Drop ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Analytic Approximation ◽  
Effect Transistor ◽  
Long Channel

It is shown that the accuracy of the charge-sheet model for the long-channel metal-oxide-semiconductor field-effect transistor can be improved by allowing for the small potential drop across the inversion layer, and by using a more accurate analytic approximation for the charge stored in the depletion region.

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