High Pressure Sintering of Silicon Carbide with Mg-Cr3C2 Composite Additive
Keyword(s):
C 30
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Porous silicon carbide was sintered at 1300 °C/30 MPa for 2 h with 4 wt.% magnesium alloy and 4 wt.% chromium carbide composite additives. The sintered ceramic presented density of around 92% of the theoretical density. No new phase was observed after sintering. Mg segregates around chromium carbide particles in sintered ceramic. The silicon carbide particles were mainly bonded by melt magnesium alloy and chromium carbide diffused in solid state. The voids existed in the sintered ceramic, but much more fracture occurred in silicon carbide particles during bending due to high bonding strength of sintering necks. Some voids existed in the ceramic, which act as crack sources during fracture.
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2006 ◽
Vol 419
(1-2)
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pp. 86-90
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2012 ◽
Vol 512-515
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pp. 951-954
2019 ◽
Vol 116
(6)
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pp. 631
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2019 ◽
Vol 1
(1)
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pp. 015001
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2015 ◽
Vol 2015
(10)
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pp. 790-794
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