In Situ High-Resolution Transmission Electron Microscopy of the Amorphous to Crystalline Phase Transformation in Pd80Si20 Alloy

1993 ◽  
Vol 126-128 ◽  
pp. 467-470 ◽  
Author(s):  
J.M. Howe
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Phase Transformation ◽  
High Resolution ◽  
Crystalline Phase ◽  
Transmission Electron

In-Situ High Resolution Transmission Electron Microscopy of Dynamic Events During the Amorphous to Crystalline Phase Transformation in Silicon

1985 ◽  
Vol 62 ◽  
Author(s):  
M. A. Parker ◽  
T. W. Sigmon ◽  
R. Sinclair
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Phase Transformation ◽  
Solid State ◽  
High Resolution ◽  
Elevated Temperatures ◽  
Video Recording ◽  
Dynamic Events ◽  
Transmission Electron

ABSTRACTA technique has been developed which employs high resolution transmission electron microscopy (HRTEM) for the observation of the atomic mechanisms associated with solid state phase transformation as they occur at elevated temperatures. It consists of the annealing in-situ of cross-section transmission electron microscopy (TEM) specimens that have been favorably oriented for lattice fringe imaging and the video-recording of dynamic events as they occur in real-time. By means of this technique, we report the first video-recorded lattice images of crystallographic defect motion in silicon, viz. the motion of dislocations and stacking faults, as well as the first such images of the atomic mechanisms responsible for the amorphous to crystalline (a-c) phase transformation, viz. heterogeneous nucleation of crystal nuclei, coalescence of crystal nuclei by co-operative atomic processes, ledge motion at the growth interface, and normal growth in silicon. This technique holds great potential for the elucidation of the atomic mechanisms involved in reaction kinetics in the solid state.

In-Situ Transmission Electron Microscopy and Computer Simulation Study of the Kinetics of Oxygen Loss in Yba2Cu3OZ

1989 ◽  
Vol 169 ◽  
Author(s):  
C. P. Burmester ◽  
L. T. Wille ◽  
R. Gronsky ◽  
B. T. Ahn ◽  
V. Y. Lee ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Computer Simulation Study ◽  
Oxygen Loss ◽  
Domain Structures ◽  
Transmission Electron ◽  
Kinetics Of ◽  
Image Simulations

AbstractHigh resolution transmission electron microscopy during in‐situ quenching of YBa2Cu3Oz is used to study the kinetics of microdomain formation during oxygen loss in this system. Image simulations based on atomic models of oxygen‐vacancy order in the basal plane of this material generated by Monte Carlo calculations are used to interpret high resolution micrographs of the structures obtained by quenching. The observed domain structures agree well with those obtained from the simualtions.

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