Structural Characterization of Silicon Carbide Etched by Using a Combination of Ion Implantation and Wet Chemical Etching

ABSTRACTLuminescence nanocrystals or quantum dots give grate potential for bio-analysis as well as optoelectronics. Here we report an effective and non-expensive fabrication method of silicon carbide nanocrystals, with diameter below 10 nm, based on electroless wet chemical etching. Our samples show strong violet-blue emission in the 410-450 nm region depending on the used solvents and particle size. Raman and infrared measurements suggest the varied nature of surfaces of silicon carbide nanocrystals which elucidate the behavior of the silicon carbide colloid solvents and also give opportunity to modify the surface easily for specific biological, medical or other application.

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Study on Wet chemical Etching Characterization of Zinc Oxide Film for Transparency Conductive Oxide Application

Applied Science and Convergence Technology ◽

10.5757/jkvs.2008.17.1.073 ◽

2008 ◽

Vol 17 (1) ◽

pp. 73-79 ◽

Cited By ~ 3

Author(s):

Dong-Geun Yoo ◽

Myoung-Hwa Kim ◽

Seong-Hun Jeong ◽

Jin-Hyo Boo

Keyword(s):

Zinc Oxide ◽

Oxide Film ◽

Chemical Etching ◽

Zinc Oxide Film ◽

Conductive Oxide ◽

Wet Chemical ◽

Wet Chemical Etching

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Fabrication and characterization of SiO2 microcantilevers by direct laser writing and wet chemical etching methods for relative humidity sensing

Microelectronic Engineering ◽

10.1016/j.mee.2019.04.005 ◽

2019 ◽

Vol 212 ◽

pp. 61-69 ◽

Cited By ~ 1

Author(s):

S. Balasubramanian ◽

K. Prabakar

Keyword(s):

Relative Humidity ◽

Chemical Etching ◽

Direct Laser Writing ◽

Laser Writing ◽

Humidity Sensing ◽

Direct Laser ◽

Wet Chemical ◽

Wet Chemical Etching ◽

Fabrication And Characterization

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A Novel Method of Fabricating SiC-On-Insulator Substrates for Use in MEMS

MRS Proceedings ◽

10.1557/proc-681-i5.16 ◽

2001 ◽

Vol 681 ◽

Author(s):

Hung-I Kuo ◽

Christian Zorman ◽

Mehran Mehregany

Keyword(s):

Silicon Carbide ◽

Wafer Bonding ◽

Chemical Etching ◽

Microelectromechanical Systems ◽

Electronic Devices ◽

High Deposition Rate ◽

Method Transfer ◽

Novel Method ◽

Wet Chemical ◽

Wet Chemical Etching

ABSTRACTThis paper reports on a novel, bonding-free method to fabricate silicon carbide-on-insulator (SiCOI) substrates. The process bypasses wafer bonding by using a high deposition rate polysilicon process in conjunction with wet chemical etching to produce wafer-thick polysilicon layers that serve as substrates for the SiCOI structures. Because wafer bonding is not used, insulators of various material types and thickness can be used. Using this method, transfer percentages over 99% are readily achievable. Various applications could benefit from this technology, including high temperature SiC-based microelectromechanical systems (MEMS) and SiC electronic devices.

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Maskless sub-μm patterning of silicon carbide using a focused ion beam in combination with wet chemical etching

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.589859 ◽

1998 ◽

Vol 16 (2) ◽

pp. 540 ◽

Cited By ~ 5

Author(s):

R. Menzel

Keyword(s):

Silicon Carbide ◽

Chemical Etching ◽

Focused Ion Beam ◽

Ion Beam ◽

Wet Chemical ◽

Wet Chemical Etching

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Synthesis of Spatially Controlled Nanostructures by Ion Implantation in V-Grooves on (001) Si Surfaces

MRS Proceedings ◽

10.1557/proc-647-o10.2 ◽

2000 ◽

Vol 647 ◽

Author(s):

Torsten Müller ◽

Karl-Heinz Heinig ◽

Bernd Schmidt ◽

Arndt Mücklich ◽

Wolfhard Möller

Keyword(s):

Monte Carlo ◽

Ion Implantation ◽

Formation Process ◽

Chemical Etching ◽

Self Organization ◽

Theoretical Studies ◽

Lattice Monte Carlo ◽

Kinetic Lattice Monte Carlo ◽

Wet Chemical ◽

Wet Chemical Etching

AbstractThe synthesis of spatially controlled Ge nanowires and nanoclusters by Ge+ ion implantation in oxidized V-grooves on (001) Si surfaces has been studied experimentally as well as theoretically. The V-grooves were prepared by anisotropic wet chemical etching and thermal oxidation. The SiO2-covered V-grooves were implanted with 70 keV Ge+ ions up to a fluence of 1017 cm−2. Ge accumulates within the SiO2 at the bottom of the V-groove, which has been proven by analytical TEM (EDX-mapping). Theoretical studies have shown that the Ge accumulation is caused by the V-groove geometry, forward sputtering, and re-deposition. During subsequent annealing the redistributed Ge forms a nanowire by precipitation, ripening and coalescence. Kinetic lattice Monte Carlo simulations of the nanowire formation process show growth instabilities and self-organization phenomena.

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