Homoepitaxial Growth of Cubic Silicon Carbide by Sublimation Epitaxy

2002 ◽  
Vol 389-393 ◽  
pp. 279-282 ◽  
Author(s):  
Tomoaki Furusho ◽  
Toshiyuki Miyanagi ◽  
Yoichi Okui ◽  
Satoru Ohshima ◽  
Shigehiro Nishino
2021 ◽  
Vol 103 (19) ◽  
Author(s):  
Peter A. Schultz ◽  
Renee M. Van Ginhoven ◽  
Arthur H. Edwards

2013 ◽  
Vol 740-742 ◽  
pp. 283-286
Author(s):  
Philip Hens ◽  
Julian Müller ◽  
Günter Wagner ◽  
Rickard Liljedahl ◽  
Erdmann Spiecker ◽  
...  

In this paper we present a concept on the defect generation and annihilation during the homoepitaxial growth step of cubic silicon carbide by sublimation epitaxy on templates grown by chemical vapor deposition on silicon substrates. Several structural defects like stacking faults, twins and star defects show opposite evolution from the template layer into the sublimation grown material. While single planar defects tend to annihilate with increasing layer thickness, the defect clusters assigned to the star defects are enlarging. These issues contribute to a balance of how to achieve the best possible quality on thick layers.


1999 ◽  
Vol 17 (5) ◽  
pp. 2629-2633 ◽  
Author(s):  
F. Amy ◽  
L. Douillard ◽  
V. Yu. Aristov ◽  
P. Soukiassian

1999 ◽  
Vol 75 (1) ◽  
pp. 88-90 ◽  
Author(s):  
V. A. Gubanov ◽  
C. Y. Fong

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