Effect of Growth Condition on the Electrical and Magnetic Properties of Sputtered ZnCo2O4 Films

2004 ◽  
Vol 449-452 ◽  
pp. 509-512 ◽  
Author(s):  
Hyun Jung Kim ◽  
In Chang Song ◽  
Jae Ho Sim ◽  
Hyo Jin Kim ◽  
Do Jin Kim ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Hole Concentration ◽  
Pressure Ratio ◽  
Antiferromagnetic Coupling ◽  
Ferromagnetic Transition ◽  
Electrical And Magnetic Properties ◽  
P Type ◽  
Partial Pressure Ratio

We report on the effect of the oxygen partial pressure ratio in the sputtering gas mixture on the electrical and magnetic properties of cubic spinel ZnCo2O4 thin films grown by reactive magnetron sputtering. The conduction type and carrier concentration in ZnCo2O4 films were found to be dependent on the oxygen partial pressure ratio. The maximum electron and hole concentration at 300 K were estimated to be as high as 1.37 × 1020 cm-3 and 2.81 × 1020 cm-3, respectively. While an antiferromagnetic coupling was found for n-type ZnCo2O4, a ferromagnetic interaction was observable in p-type ZnCo2O4, indicating hole-induced ferromagnetic transition in spinel ZnCo2O4.

scholarly journals Growth Properties of Sputtered ZnO Thin Films Affected by Oxygen Partial Pressure Ratio

2008 ◽  
Vol 17 (3) ◽  
pp. 204-210 ◽  
Author(s):  
Man-Il Kang ◽  
Moon-Won Kim ◽  
Yong-Gi Kim ◽  
Ji-Wook Ryu ◽  
Han-O Jang
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pressure Ratio ◽  
Zno Thin Films ◽  
Growth Properties ◽  
Partial Pressure Ratio

scholarly journals Kinetic decomposition of Ni2SiO4 in oxygen potential gradients

1987 ◽  
Vol 2 (3) ◽  
pp. 338-344 ◽  
Author(s):  
K. T. Jacob ◽  
A. K. Shukla
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Oxygen Potential ◽  
Pressure Ratio ◽  
Metallurgical Society ◽  
Low Oxygen ◽  
Critical Oxygen ◽  
Kinetic Decomposition ◽  
Potential Gradients ◽  
Partial Pressure Ratio

Nickel orthosilicate (Ni2SiO4) has been found to decompose into its component binary oxides in oxygen potential gradients at 1373 K. Nickel oxide was formed at the high oxygen potential boundary, while silica was detected at the low oxygen potential side. Significant porosity and fissures were observed near the Ni2SiO4/SiO2 interface and the SiO2 layer. The critical oxygen partial pressure ratio required for decomposition varied from 1.63 to 2.15 as the oxygen pressures were altered from 1.01 ⊠ 105 to 2.7X 10−4 Pa, well above the dissociation pressure of Ni2SiO4. Platinum markers placed at the boundaries of the Ni2SiO4 sample indicated growth of NiO at the higher oxygen potential boundary, without any apparent transport of material to the low oxygen potential side. However, significant movement of the bulk Ni2SiO4 crystal with respect to the marker was not observed. The decomposition of the silicate occurs due to the unequal rates of transport of Ni and Si. The critical oxygen partial pressure ratio required for decomposition is related both to the thermodynamic stability of Ni2SiO4 with respect to component oxides and the ratio of diffusivities of nickel and silicon. Kinetic decomposition of multicomponent oxides, first discovered by Schmalzried, Laqua, and co-workers [H. Schmalzried, W. Laqua, and P. L. Lin, Z. Natur Forsch. Teil A 34, 192 (1979); H. Schmalzried and W. Laqua, Oxid. Met. 15, 339 (1981); W. Laqua and H. Schmalzried, Chemical Metallurgy—A Tribute to Carl Wagner (Metallurgical Society of the AIME, New York, 1981), p. 29] has important consequences for their use at high temperatures and in geochemistry.

Arterial-alveolar oxygen partial pressure ratio

1986 ◽  
Vol 14 (2) ◽  
pp. 153-154 ◽  
Author(s):  
JEAN-PAUL VIALE ◽  
CARLISLE J. PERCIVAL ◽  
GUY ANNAT ◽  
BERNARD ROUSSELET ◽  
JEAN MOTIN
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pressure Ratio ◽  
Alveolar Oxygen ◽  
Partial Pressure Ratio

Stability of the arterial/alveolar oxygen partial pressure ratio

1979 ◽  
Vol 7 (6) ◽  
pp. 267-272 ◽  
Author(s):  
ROBERT GILBERT ◽  
J. H. AUCHINCLOSS ◽  
MITCHELL KUPPINGER ◽  
M. VARKEY THOMAS
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pressure Ratio ◽  
Alveolar Oxygen ◽  
Partial Pressure Ratio

Defect Engineering of BCZT–based Piezoelectric Ceramics with High Piezoelectric Properties

2021 ◽  
Author(s):  
Xinjian Wang ◽  
Yu Huan ◽  
Yixuan Zhu ◽  
Peng Zhang ◽  
Wenlong Yang ◽  
...  
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Conduction Mechanism ◽  
Piezoelectric Properties ◽  
Hole Concentration ◽  
Impedance Analysis ◽  
Defect Engineering ◽  
Intrinsic Conduction ◽  
P Type ◽  
Mn Doped

Abstract The intrinsic conduction mechanism and optimal sintering atmosphere of (Ba0.85Ca0.15)(Zr0.1Ti0.9)O3 (BCZT) ceramics was regulated by doping Mn element in this work. By Hall and impedance analysis, the undoped BCZT ceramics exhibit a typical n–type conduction mechanism, and the electron concentration decreases with the increasing oxygen partial pressure. Therefore, the undoped ceramics exhibit best electrical properties (d33 = 585 pC/N, kp = 56%) in O2. A handful of Mn doping element would transfer the conduction mechanism from n-type into p–type. And the hole concentration reduces with the decreasing oxygen partial pressure for Mn-doped BCZT ceramics. Therefore, the Mn-doped ceramics sintered in N2 have the highest insulation resistance and best piezoelectric properties (d33 = 505 pC/N, kp = 50%). The experimental results demonstrate that the doping Mn element can effectively adjusts the intrinsic conduction mechanism and then predicts the optimal atmosphere.

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